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1. 发明专利

JP2004002416A Monomer for chemically amplifying type photoresist composition 审中-公开
公开(公告)号：JP2004002416A
公开(公告)日：2004-01-08
申请号：JP2003134664
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッドEverlight Usa,Inc.
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： G03F7/039 , C07C69/00 , C07D307/77 , C07D307/88 , C07D307/93 , C07D493/08 , C07D493/14 , C08F20/10
CPC分类号： C07D493/14 , C07D307/77 , C07D307/88
摘要： PROBLEM TO BE SOLVED: To provide a monomer for a chemically amplifying type photoresist composition. SOLUTION: This monomer for the chemically amplifying type photoresist composition is a compound having a structure expressed by formula 1 [wherein, R 1 is H or a 1-4C alkyl; R 2 is hydroxy, a 1-8C alkoxy or a 1-8C thioalkyl; G is (CH 2 ) n , O or S, wherein (n) is 0-4 integer; Rc is a lactone; and (m) is 1-3 integer]. The compound is suitable for synthesizing a polymer equipped with attaching and anti-dryetching properties, and especially suitable for synthesizing a polymer by copolymerizing it with the combination of other monomers. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2003342323A Resin for chemically amplified photoresist composition 有权
标题翻译：用于化学放大的光电组合物的树脂
公开(公告)号：JP2003342323A
公开(公告)日：2003-12-03
申请号：JP2003134823
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッド
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , C08F220/30 , G03F7/039 , H01L21/027
CPC分类号： C08F220/30 , G03F7/0395 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a resin for a chemically amplified photoresist composition.
SOLUTION: The polymer has a structure of a unit (II) represented by the chemical formula 166 (wherein R
1 is H or a 1-4C alkyl group; R
2 is a hydroxy group, a 1-8C alkoxy group or a 1-8C thioalkyl group; G is (CH
2 )
n , O, or S; n is an integer of 0-4; Rc is a lactone group; and m is an integer of 1-3). The polymer exhibits excellent characteristics such as hydrophilicity and dry etching resistance, and is used for manufacturing a chemically amplified photoresist composition. The chemically amplified photoresist composition is used in a lithography process, particularly in a lithography process using a light source of a wavelength of 193 nm and is quite excellent in resolution, profiles and photosensitivity.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于化学放大光致抗蚀剂组合物的树脂。解决方案：聚合物具有由化学式166表示的单元（II）的结构（其中R 1 为H或1-4C烷基; R 2 < SP>是羟基，1-8C烷氧基或1-8C硫代烷基; G是（CH 2 ），N或S; n是 0-4的整数; R c为内酯基; m为1-3的整数）。该聚合物表现出优异的特性，例如亲水性和耐干蚀刻性，并且用于制造化学放大光致抗蚀剂组合物。化学放大光致抗蚀剂组合物用于光刻工艺，特别是在使用波长为193nm的光源的光刻工艺中，并且在分辨率，型材和光敏性方面非常优异。版权所有（C）2004，JPO

3. 发明专利

JP2006209117A Developer composition 有权
标题翻译：开发商组合
公开(公告)号：JP2006209117A
公开(公告)日：2006-08-10
申请号：JP2006013766
申请日：2006-01-23
申请人： Everlight Usa Inc , エバーライトユーエスエー、インク
发明人： CHEN CHI-SHENG
IPC分类号： G03F7/32 , G02B5/20
CPC分类号： G03F7/322
摘要： PROBLEM TO BE SOLVED: To provide a developer composition and a developing solution for obtaining a clear defined pattern of a photoresist pattern or a color filter.
SOLUTION: The developer composition comprises: (a) an alkali metal carbonate by 0.01 to 20 parts by mass with respect to water of 100 parts by mass; (b) an alkali metal bicarbonate by 0.01 to 20 parts by mass with respect to water of 100 parts by mass; (c) a nonionic surfactant expressed by formula (I) by 0.01 to 25 parts by mass with respect to water of 100 parts by mass; and (d) a nonionic surfactant expressed by formula (II) by 0.01 to 25 parts by mass with respect to water of 100 parts by mass. In formula (I), R
1 represents a hydrogen atom or a methyl group; R
2 represents a hydrogen atom or a methyl group; n is an integer 0 to 10; and m is an integer 4 to 20. In formula (II), R
3 represents a 1-12C alkyl group; p is an integer 0 to 10; and q is an integer 4 to 20.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于获得光致抗蚀剂图案或滤色器的清晰限定图案的显影剂组合物和显影液。解决方案：显影剂组合物包含：（a）碱金属碳酸盐相对于水100质量份为0.01〜20质量份; （b）碱金属碳酸氢盐相对于水100质量份为0.01〜20质量份; （c）由式（I）表示的非离子表面活性剂相对于水100质量份为0.01〜25质量份; 和（d）由式（II）表示的非离子型表面活性剂相对于水100质量份为0.01〜25质量份。在式（I）中，R“1”表示氢原子或甲基; R SB 2表示氢原子或甲基; n为整数0〜10; 式（II）中，R SB 3表示1-12个碳原子的烷基， p是0到10的整数; q为4〜20的整数。（C）2006，JPO＆NCIPI

4. 发明专利

JP2003345025A Chemically amplifying photoresist composition 审中-公开
标题翻译：化学放大胶片组合物
公开(公告)号：JP2003345025A
公开(公告)日：2003-12-03
申请号：JP2003134879
申请日：2003-05-13
申请人： Everlight Usa Inc , エバーライトユーエスエーインコーポレイティッド
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a chemically amplifying photoresist composition.
SOLUTION: The chemically amplifying photoresist composition contains a polymer having a repeated structure of a unit expressed by formula (II). In formula (II), R
1 represents H or 1-4C alkyl group, R
2 represents a hydroxyl group, a 1-8C alkoxyl group or a 1-8C thioalkyl group, G represents (CH
2 )
n , O or S, wherein n is an integer 0 to 4, Rc represents a lactone group and m is an integer 1 to 3. The chemically amplifying photoresist composition is used for general lithographic processes, in particular, for lithographic processes with a light source at 193 nm wavelength to have extremely preferable resolution, profile and photosensitivity.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供化学放大光致抗蚀剂组合物。解决方案：化学放大光致抗蚀剂组合物含有具有由式（II）表示的单元的重复结构的聚合物。式（II）中，R SP 1表示H或1-4C烷基，R SP 2表示羟基，1-8C烷氧基或1-8C硫代烷基基团，G表示（CH 2 ），其中n为0〜4的整数，R c为内酯基，m为1〜3的整数。化学放大光致抗蚀剂组合物用于一般光刻工艺，特别是用于具有193nm波长的光源的光刻工艺，以具有非常优选的分辨率，分布和光敏性。版权所有（C）2004，JPO

5. 发明专利

SG123557A1 Chemical amplified photoresist compositions 未知
公开(公告)号：SG123557A1
公开(公告)日：2006-07-26
申请号：SG200302488
申请日：2003-05-06
申请人： EVERLIGHT USA INC
发明人： CHEN CHI-SHENG , LI YEN-CHENG , CHENG MENG-HSUM
IPC分类号： C08F20/10 , G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027

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