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    • 8. 发明授权
    • Method for adjusting substrate processing times in a substrate polishing system
    • 在基板研磨系统中调整基板处理时间的方法
    • US07175505B1
    • 2007-02-13
    • US11328959
    • 2006-01-09
    • Sen-Hou KoHarry Q. LeeWei-Yung Hsu
    • Sen-Hou KoHarry Q. LeeWei-Yung Hsu
    • B24B49/00
    • B24B37/04B24B27/0023B24B49/00
    • Aspects of the present invention include a method and an apparatus that may be utilized to adjust processing times in a substrate processing system. In one embodiment of the present invention, a pre-processing thickness measurement of a substrate while the substrate is in one of the polishing stations is taken. Then the substrate is processed in the polishing system for a predetermined processing time. A post-processing thickness measurement is taken while the substrate is in one of the polishing stations. A removal rate is calculated based on the pre-processing and the post-processing measurements and the predetermined processing time. A processing time is adjusted for one or more of the polishing stations based on the removal rate for use in subsequent processing of a production substrate.
    • 本发明的方面包括可用于调整基板处理系统中的处理时间的方法和装置。 在本发明的一个实施例中,采用基板在其中一个抛光台中的基板的预处理厚度测量。 然后在抛光系统中处理基板达预定的处理时间。 在基板位于一个抛光站中时,进行后处理厚度测量。 基于预处理和后处理测量以及预定处理时间计算去除率。 基于用于生产基板的后续处理的去除速率来调整一个或多个抛光站的处理时间。