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1. 发明申请

US20110101414A1 LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION 有权
标题翻译：具有氧化锌电流扩散和光提取层的发光二极管从低温水溶液中沉积
公开(公告)号：US20110101414A1
公开(公告)日：2011-05-05
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
IPC分类号： H01L33/32 , H01L33/40 , C01G9/02
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
摘要翻译：一种制造具有提高光提取效率的发光二极管（LED）的方法，包括提供包括p型层和n型层之间的发光有源层的基于III氮化物的LED结构; 通过将p型层的表面浸没在低温水溶液中，在p型层上外延生长氧化锌（ZnO）层，其中ZnO层是透明电流扩散层; 以及在ZnO层上沉积p型接触。效率的提高可能超过93％，成本很少或没有增加。

2. 发明授权

US09653655B2 Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution 有权
公开(公告)号：US09653655B2
公开(公告)日：2017-05-16
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Jin Hyeok Kim , MaryAnn E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , Jin Hyeok Kim
IPC分类号： H01L33/44 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40 , H01L21/288 , H01L33/00
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

3. 发明申请

US20130029450A1 METHOD FOR MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130029450A1
公开(公告)日：2013-01-31
申请号：US13641190
申请日：2011-04-19
申请人： Chae Hwan Jeong , Jong Ho Lee , Ho Sung Kim , Jin Hyeok Kim , Suk Ho Lee
发明人： Chae Hwan Jeong , Jong Ho Lee , Ho Sung Kim , Jin Hyeok Kim , Suk Ho Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/0326 , H01L31/022425 , H01L31/0322 , H01L31/03923 , H01L31/0749 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2. Further, a Cu—Zn—Sn—S (Cu2ZnSnS4) precursor film, a CuInSe2 precursor film, a CuInS2 precursor film, and a Cu (InGa)Se2 precursor film or a Cu(InGa)S2 precursor film can have a multi-layer structure of each component or a single-layer structure having compounds of the components. Said crystallization step for the precursor film is progressed through an electron-beam irradiation process.
摘要翻译：本发明提供一种制造太阳能电池的方法，所述太阳能电池能够在制造过程中抑制硒的挥发和基板的变形。根据本发明，太阳能电池的制造方法包括以下步骤：提供基板; 在所述基板上形成后电极; 在后电极上形成用于光吸收膜的前体膜; 通过对用于光吸收膜的前体膜进行结晶化处理来形成光吸收膜; 在光吸收膜上形成缓冲膜; 在缓冲膜上形成窗膜，在窗膜上形成防反射膜; 并且部分地构图防反射膜，并且在图案化区域中形成栅格电极。所述光吸收膜前体膜包括Cu-Zn-Sn-S（Cu2ZnSnS4），CuInSe2，CuInS2，Cu（InGa）Se2或Cu（InGa）S2。此外，Cu-Zn-Sn-S（Cu2ZnSnS4）前体膜，CuInSe2前体膜，CuInS2前体膜和Cu（InGa）Se2前体膜或Cu（InGa）S2前体膜可以具有多层每个组分的结构或具有组分化合物的单层结构。前体膜的所述结晶步骤通过电子束照射工艺进行。

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