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1. 发明申请

US20110101414A1 LIGHT EMITTING DIODES WITH ZINC OXIDE CURRENT SPREADING AND LIGHT EXTRACTION LAYERS DEPOSITED FROM LOW TEMPERATURE AQUEOUS SOLUTION 有权
标题翻译：具有氧化锌电流扩散和光提取层的发光二极管从低温水溶液中沉积
公开(公告)号：US20110101414A1
公开(公告)日：2011-05-05
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , MaryAnn E. Lange , Jin Hyeok Kim
IPC分类号： H01L33/32 , H01L33/40 , C01G9/02
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.
摘要翻译：一种制造具有提高光提取效率的发光二极管（LED）的方法，包括提供包括p型层和n型层之间的发光有源层的基于III氮化物的LED结构; 通过将p型层的表面浸没在低温水溶液中，在p型层上外延生长氧化锌（ZnO）层，其中ZnO层是透明电流扩散层; 以及在ZnO层上沉积p型接触。效率的提高可能超过93％，成本很少或没有增加。

2. 发明授权

US09653655B2 Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution 有权
公开(公告)号：US09653655B2
公开(公告)日：2017-05-16
申请号：US12939044
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Jin Hyeok Kim , MaryAnn E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Steven P. DenBaars , Frederick F. Lange , Jin Hyeok Kim
IPC分类号： H01L33/44 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40 , H01L21/288 , H01L33/00
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

3. 发明申请

US20110266551A1 HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION 有权
标题翻译：在低温水溶液中生成的多个表面上的氧化锌层覆盖的高亮度发光二极管
公开(公告)号：US20110266551A1
公开(公告)日：2011-11-03
申请号：US12938948
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
IPC分类号： H01L33/22 , H01L33/42 , H01L33/30
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
摘要翻译：一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和（0001）面的顶面。

4. 发明授权

US08536618B2 Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays 有权
标题翻译：在一个或多个表面上使用氧化锌纳米棒阵列的发光二极管结构和制造这种氧化锌纳米棒阵列的低成本方法
公开(公告)号：US08536618B2
公开(公告)日：2013-09-17
申请号：US12938872
申请日：2010-11-03
申请人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/36
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
摘要翻译：一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中表面与III型氮化物的c面不同，透过LED产生的光。

5. 发明授权

US08637334B2 High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution 有权
标题翻译：在低温水溶液中生长的多个表面上由氧化锌层覆盖的高亮度发光二极管
公开(公告)号：US08637334B2
公开(公告)日：2014-01-28
申请号：US12938948
申请日：2010-11-03
申请人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Steven P. DenBaars , Shuji Nakamura , Maryann E. Lange
发明人： Daniel B. Thompson , Jacob J. Richardson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.
摘要翻译：一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和（0001）面的顶面。

6. 发明申请

US20110108873A1 LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS 有权
标题翻译：在一个或多个表面上使用氧化锌纳米级阵列的发光二极管结构，以及生产这种氧化锌纳米棒阵列的低成本方法
公开(公告)号：US20110108873A1
公开(公告)日：2011-05-12
申请号：US12938872
申请日：2010-11-03
申请人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
发明人： Jacob J. Richardson , Daniel B. Thompson , Ingrid Koslow , Jun Seok Ha , Frederick F. Lange , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32 , H01L33/26 , B82Y40/00 , B82Y99/00
CPC分类号： H01L33/44 , H01L21/288 , H01L33/007 , H01L33/14 , H01L33/28 , H01L33/32 , H01L33/40
摘要： A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
摘要翻译：一种制备具有改进的光提取效率的发光二极管的方法，包括通过从水溶液中生长ZnO纳米棒，在III-氮化物基LED的一个或多个表面上沉积多个氧化锌（ZnO）纳米棒，其中表面与III型氮化物的c面不同，透过LED产生的光。

7. 发明申请

US20100263586A1 LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS 有权
标题翻译： ZnO薄膜，纳米结构和块状单晶的水性合成的低温连续循环反应器
公开(公告)号：US20100263586A1
公开(公告)日：2010-10-21
申请号：US12761246
申请日：2010-04-15
申请人： Jacob J. Richardson , Frederick F. Lange , Maryann E. Lange
发明人： Jacob J. Richardson , Frederick F. Lange , Maryann E. Lange
IPC分类号： C30B19/08 , C30B19/06 , C30B19/10
CPC分类号： C30B7/005 , C30B7/08
摘要： A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
摘要翻译：一种合成ZnO的方法，包括在包含ZnO源材料的含有底物或种子的较热沉积区和较冷的溶解区之间连续循环ZnO饱和的生长溶液。

8. 发明授权

US08668774B2 Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals 有权
标题翻译：低温连续循环反应器，用于ZnO薄膜，纳米结构和体单晶的水合成
公开(公告)号：US08668774B2
公开(公告)日：2014-03-11
申请号：US12761246
申请日：2010-04-15
申请人： Jacob J. Richardson , MaryAnn E. Lange
发明人： Jacob J. Richardson , Frederick F. Lange
IPC分类号： C30B19/00
CPC分类号： C30B7/005 , C30B7/08
摘要： A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
摘要翻译：一种合成ZnO的方法，包括在包含ZnO源材料的含有底物或种子的较热沉积区和较冷的溶解区之间连续循环ZnO饱和的生长溶液。

9. 发明授权

US06878466B1 Method for improving the reliability of brittle materials through the creation of a threshold strength 失效
标题翻译：通过产生阈值强度来提高脆性材料的可靠性的方法
公开(公告)号：US06878466B1
公开(公告)日：2005-04-12
申请号：US09670918
申请日：2000-09-29
申请人： Frederick F. Lange , Masa P. Rao , Antonio Javier Sanchez Herencia
发明人： Frederick F. Lange , Masa P. Rao , Antonio Javier Sanchez Herencia
IPC分类号： B32B7/00 , B32B7/02 , B32B15/04 , B32B18/00 , B32B27/00
CPC分类号： B32B18/00 , B32B2315/02 , C04B2235/6562 , C04B2235/96 , C04B2237/341 , C04B2237/343 , C04B2237/348 , C04B2237/365 , C04B2237/368 , C04B2237/704 , Y10T428/12576 , Y10T428/12611 , Y10T428/12986 , Y10T428/24942 , Y10T428/2495 , Y10T428/24992 , Y10T428/31 , Y10T428/8305
摘要： Reliable, flaw-tolerant brittle materials are produced by incorporating layers under residual compression on the surface and throughout the bulk of the material that act to trap and contain the propagation of otherwise catastrophic cracking. The residual compression within these layers acts to reduce the stress intensity of the cracks, thereby causing them to arrest until further loading is provided. This highly desirable stable, subcritical crack growth mode persists with increased loading until the applied stress is large enough to drive the crack completely through compressive region, after which failure occurs. The exact level of stress needed to accomplish this is dictated by the architectural design of the compressive layers such that the material can be designed to have any minimum strength desired, within the limits of the materials system used. This results in a truncation of the strength distribution, such that there is virtually zero probability of failure below this minimum value, i.e. the material possesses a threshold strength. Consequently, sensitivity to flaws that would ordinarily cause catastrophic failure at stresses below the threshold strength is eliminated. Furthermore, the potential exists for the complete elimination of the strength variability, hence improving reliability, through the creation of nearly deterministic, i.e. single-valued, strengths by increasing the threshold strength above the stresses at which failure normally initiates from intrinsic flaws.
摘要翻译：通过在表面上以及整个材料的整个主体内引入残余压缩层来产生可靠的，耐缺陷的脆性材料，其作用是捕获并容纳其它灾难性裂纹的传播。这些层内的残余压缩作用是降低裂纹的应力强度，从而使其停止，直至提供进一步的加载。这种非常理想的稳定的亚临界裂纹扩展模式持续增加负载，直到施加的应力足够大以通过压缩区域完全驱动裂纹，之后发生故障。实现这一点所需的精确应力水平由压缩层的结构设计决定，使得材料可以在所使用的材料系统的限度内被设计成具有所需的任何最小强度。这导致强度分布的截断，使得在该最小值之下几乎没有故障概率为零，即该材料具有阈值强度。因此，消除了通常在低于阈值强度的应力下导致灾难性故障的缺陷的敏感性。此外，通过增加阈值强度高于通常从内在缺陷引发的应力的阈值强度，存在完全消除强度变异性，从而提高可靠性的潜力，通过产生几乎确定性的即单值的强度。

10. 发明授权

US6117233A Formation of single-crystal thin SiC films 失效
标题翻译：单晶薄SiC薄膜的形成
公开(公告)号：US6117233A
公开(公告)日：2000-09-12
申请号：US907130
申请日：1997-08-06
申请人： Joachim Bill , Frederick F. Lange , Thomas Wagner , Fritz Aldinger , Detlef Heimann
发明人： Joachim Bill , Frederick F. Lange , Thomas Wagner , Fritz Aldinger , Detlef Heimann
IPC分类号： C30B1/02 , C30B23/02
CPC分类号： C30B1/023 , C30B29/36
摘要： Thin, single-crystal SiC films are obtained by means of a pyrolysis process, the substrate to be coated being covered with a carbonaceous polysilane, the adhering layer being pyrolyzed in an inert atmosphere and the amorphous layer of SiC obtained in this way being crystallized by maintaining it at a temperature of over 700.degree. C. Using a special variation of the process, it is easy to form doped SiC films. To this end the dopant is added in the form of a silane compound.
摘要翻译：通过热解法获得薄的单晶SiC膜，待涂覆的基底被碳质聚硅烷覆盖，粘附层在惰性气氛中热解，以这种方式获得的非晶层由将其保持在700℃以上的温度。使用该工艺的特殊变化，容易形成掺杂的SiC膜。为此，掺杂剂以硅烷化合物的形式加入。

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