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1. 发明申请

WO2014085315A2 HIGH RATE DEPOSITION SYSTEMS AND PROCESSES FOR FORMING HERMETIC BARRIER LAYERS 审中-公开
标题翻译：高速沉积系统和形成掩蔽层的方法
公开(公告)号：WO2014085315A2
公开(公告)日：2014-06-05
申请号：PCT/US2013/071653
申请日：2013-11-25
申请人： CORNING INCORPORATED , BELLMAN, Robert Alan , CHUANG, Ta Ko , MANLEY, Robert George , QUESADA, Mark Alejandro , SACHENIK, Paul Arthur
发明人： BELLMAN, Robert Alan , CHUANG, Ta Ko , MANLEY, Robert George , QUESADA, Mark Alejandro , SACHENIK, Paul Arthur
IPC分类号： C23C14/10
CPC分类号： C23C14/34 , C23C14/10 , C23C14/35 , C23C14/541
摘要： A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T g glass, a precursor of a low T g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.
摘要翻译：形成气密性阻挡层的方法包括从溅射靶溅射薄膜，其中溅射靶包括诸如低Tg玻璃，低Tg玻璃的前体或铜或锡的氧化物的溅射材料。在溅射期间，阻挡层中的缺陷的形成被限制在窄范围内并且溅射材料保持在小于200℃的温度。

2. 发明申请

WO2012166753A1 HIGH-SPEED MICRO-HOLE FABRICATION IN GLASS 审中-公开
标题翻译：玻璃中的高速微孔制造
公开(公告)号：WO2012166753A1
公开(公告)日：2012-12-06
申请号：PCT/US2012/039911
申请日：2012-05-30
申请人： CORNING INCORPORATED , CHUANG, Ta Ko , HARVEY, Daniel Ralph , STRELTSOV, Alexander Mikhailovich
发明人： CHUANG, Ta Ko , HARVEY, Daniel Ralph , STRELTSOV, Alexander Mikhailovich
IPC分类号： C03C15/00 , C03C23/00
CPC分类号： C03C23/002 , C03C15/00 , C03C23/0025 , G02B6/136 , G02B2006/1213
摘要： A method for fabricating a high-density array of holes in glass comprises providing a glass sheet having a front surface and irradiating the glass sheet with a laser beam so as to produce open holes extending into the glass sheet from the front surface of the glass sheet. The beam creates thermally induced residual stress within the glass around the holes, and after irradiating, the glass sheet is annealed to eliminate or reduce thermal stress caused by the step of irradiating. The glass sheet is then etched to produce the final hole size. Preferably, the glass sheet is also annealed before the step of irradiating, at sufficiently high temperature for a sufficient time to render the glass sheet dimensionally stable during the step of annealing after irradiating.
摘要翻译：一种在玻璃中制造高密度孔阵列的方法，包括提供具有前表面的玻璃片，并用激光束照射玻璃片，以便从玻璃板的前表面产生延伸到玻璃片中的开孔。光束在孔周围的玻璃内产生热致残余应力，并且在照射之后，玻璃板被退火以消除或降低由照射步骤引起的热应力。然后对玻璃板进行蚀刻以产生最终的孔尺寸。优选地，在足够高的温度下照射步骤之前，玻璃板也经过退火处理足够的时间以使玻璃板在照射后的退火步骤中尺寸稳定。

3. 发明公开

EP3241922A1 METHODS FOR FORMING HERMETIC BARRIER LAYERS 审中-公开
标题翻译：形成密封层的方法
公开(公告)号：EP3241922A1
公开(公告)日：2017-11-08
申请号：EP17173036.9
申请日：2013-11-25
申请人： Corning Incorporated
发明人： BELLMAN, Robert Alan , CHUANG, Ta Ko , MANLEY, Robert George , QUESADA, Mark Alejandro , SACHENIK, Paul Arthur
IPC分类号： C23C14/10 , C23C14/34
CPC分类号： C23C14/34 , C23C14/10 , C23C14/35 , C23C14/541
摘要： A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T g glass, a precursor of a low T g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.
摘要翻译：形成气密阻挡层的方法包括溅射来自溅射靶的薄膜，其中溅射靶包括溅射材料，例如低Tg玻璃，低Tg玻璃的前体或者铜或锡的氧化物。在溅射期间，阻挡层中缺陷的形成被限制在窄范围内，并且溅射材料被保持在低于200℃的温度。

4. 发明申请

WO2014179163A1 GLASS WITH DEPLETED LAYER AND POLYCRYSTALLINE-SILICON TFT BUILT THEREON 审中-公开
标题翻译：覆盖层的玻璃和其中的多晶硅TFT
公开(公告)号：WO2014179163A1
公开(公告)日：2014-11-06
申请号：PCT/US2014/035428
申请日：2014-04-25
申请人： CORNING INCORPORATED
发明人： CHUANG, Ta Ko , GU, Yunfeng , MANLEY, Robert George
IPC分类号： H01L21/324 , H01L29/786
CPC分类号： H01L29/78603 , C03C23/008 , C03C25/66 , C03C25/70 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02667 , H01L21/28 , H01L21/32133 , H01L21/324 , H01L21/76802 , H01L29/04 , H01L29/16 , H01L29/495 , H01L29/51 , H01L29/66742 , H01L29/66757 , H01L29/78606
摘要： There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors ("TFTs") on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.
摘要翻译：公开了通过用含有HCl的加热溶液处理玻璃基板的至少一个表面以在玻璃基板的表面和表面下形成耗尽层来对显示玻璃基板进行化学处理的方法。本公开还涉及包含由所公开的方法制备的耗尽层的显示玻璃基板。此外，本公开涉及通过在玻璃基板的化学处理的表面上直接沉积Si层以及退火Si层以形成多晶硅来在这些显示器玻璃基板上制造薄膜晶体管（“TFT”）的方法。

5. 发明申请

WO2012003161A1 OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING 审中-公开
标题翻译：用于制备粘合表面的氧气等离子体转化方法
公开(公告)号：WO2012003161A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/042078
申请日：2011-06-28
申请人： CORNING INCORPORATED , CHUANG, Ta Ko , USENKO, Alex
发明人： CHUANG, Ta Ko , USENKO, Alex
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/0206 , H01L21/022 , H01L21/02326 , H01L21/76254
摘要： A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate
摘要翻译：一种用于制备不能使其粘合到另一材料的表面上的材料的表面的方法。用氧等离子体处理半导体晶片的非接合表面以氧化晶片的表面，并使表面更平滑，亲水并且可粘合到另一衬底（例如玻璃衬底）的表面上。半导体晶片可以具有由诸如玻璃基板之类的不能与另一基板结合的诸如SixNy或SiNxOy的材料形成的阻挡层。在这种情况下，氧等离子体处理将阻挡层的表面转化为诸如SiO 2的氧化物，使表面平滑化，并使表面亲水且可粘合到另一基板如玻璃基板的表面。转换的氧化物层可以用酸从阻挡层或半导体晶片剥离，以便去除阻挡层或半导体晶片的表面上的污染，剥离的表面可以进行第二氧等离子体处理以进一步平滑表面，并使表面亲水并粘合到另一基底的表面

6. 发明申请

WO2012003157A1 SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 审中-公开
标题翻译：具有强化层的玻璃基板上的半导体及其制造方法
公开(公告)号：WO2012003157A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/042068
申请日：2011-06-28
申请人： CORNING INCORPORATED , SILICON ON INSULATOR TECHNOLOGIES S.A. , CHUANG, Ta Ko , CITES, Jeffrey S. , DELPRAT, Daniel , MOHAMED, Nadia B. , USENKO, Alex
发明人： CHUANG, Ta Ko , CITES, Jeffrey S. , DELPRAT, Daniel , MOHAMED, Nadia B. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
摘要翻译：一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔在离子注入薄膜转移过程中转移的硅膜。新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

7. 发明公开

EP2589067A1 OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING 审中-公开
标题翻译：氧等离子体转化法生产表面绑定
公开(公告)号：EP2589067A1
公开(公告)日：2013-05-08
申请号：EP11744126.1
申请日：2011-06-28
申请人： Corning Incorporated
发明人： CHUANG, Ta Ko , USENKO, Alex
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/0206 , H01L21/022 , H01L21/02326 , H01L21/76254
摘要： A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate

8. 发明公开

EP2589074A1 SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 审中-公开
标题翻译： ON半导体具有产生增强层和工艺的玻璃基板
公开(公告)号：EP2589074A1
公开(公告)日：2013-05-08
申请号：EP11738866.0
申请日：2011-06-28
申请人： Corning Incorporated , Soitec
发明人： CHUANG, Ta Ko , CITES, Jeffrey S. , DELPRAT, Daniel , MOHAMED, Nadia B. , USENKO, Alex
IPC分类号： H01L21/762
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

9. 发明公开

EP2929064A2 HIGH RATE DEPOSITION SYSTEMS AND PROCESSES FOR FORMING HERMETIC BARRIER LAYERS 审中-公开
标题翻译：赫尔辛基圣母玛利亚
公开(公告)号：EP2929064A2
公开(公告)日：2015-10-14
申请号：EP13808332.4
申请日：2013-11-25
申请人： Corning Incorporated
发明人： BELLMAN, Robert Alan , CHUANG, Ta Ko , MANLEY, Robert George , QUESADA, Mark Alejandro , SACHENIK, Paul Arthur
IPC分类号： C23C14/10
CPC分类号： C23C14/34 , C23C14/10 , C23C14/35 , C23C14/541
摘要： A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T g glass, a precursor of a low T g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.
摘要翻译：形成气密性阻挡层的方法包括从溅射靶溅射薄膜，其中溅射靶包括诸如低Tg玻璃，低Tg玻璃的前体或铜或锡的氧化物的溅射材料。在溅射期间，阻挡层中的缺陷的形成被限制在窄范围内，溅射材料保持在小于200℃的温度。

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