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1. 发明授权

US06852998B2 Thin-film transistor substrate and liquid crystal display 有权
标题翻译：薄膜晶体管基板和液晶显示器
公开(公告)号：US06852998B2
公开(公告)日：2005-02-08
申请号：US10385377
申请日：2003-03-07
申请人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
发明人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/00 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/45 , H01L29/786 , H01L29/12
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1214 , H01L29/458 , H01L29/66757
摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
摘要翻译：源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。栅极线直接连接到由氧化铟锌构成的栅极端子。或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

2. 发明授权

US06649936B1 Thin-film transistor substrate and liquid crystal display 有权
标题翻译：薄膜晶体管基板和液晶显示器
公开(公告)号：US06649936B1
公开(公告)日：2003-11-18
申请号：US09526150
申请日：2000-03-15
申请人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
发明人： Chae Gee Sung , Jo Gyoo Chul , Makoto Sasaki , Kazuyuki Arai
IPC分类号： H01L310392
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1214 , H01L29/458 , H01L29/66757
摘要： A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
摘要翻译：源极线直接连接到由薄膜晶体管衬底中的氧化铟锌构成的源极端子。栅极线直接连接到由氧化铟锌构成的栅极端子。或者，用于切换多个像素电极的薄膜晶体管的漏极直接连接到由氧化铟锌构成的像素电极。这些配置不需要对于传统的薄膜晶体管衬底是必需的钝化膜，并且所得到的薄膜晶体管衬底可以通过减少数量的制造步骤来制造。

3. 发明授权

US06533965B1 Transparent electrically conductive oxide film for an electronic apparatus and related method 有权
标题翻译：用于电子设备的透明导电氧化物膜及相关方法
公开(公告)号：US06533965B1
公开(公告)日：2003-03-18
申请号：US09718982
申请日：2000-11-22
申请人： Makoto Sasaki , Chae Gee Sung , Kazuyuki Arai
发明人： Makoto Sasaki , Chae Gee Sung , Kazuyuki Arai
IPC分类号： H01B108
CPC分类号： C23C14/5806 , C03C17/2453 , C03C17/253 , C03C2217/211 , C03C2217/215 , C03C2217/216 , C03C2217/23 , C23C14/086 , C23C14/3414 , C23C30/00 , G02F1/13439 , H01B1/08
摘要： A transparent electrically conductive oxide film is composed of a compound oxide containing indium oxide, tin oxide, and zinc oxide and includes a connecting section, in which the tin content is higher than the zinc content at least in connecting section, and at least the connection section has crystallinity. Alternatively, in the transparent electrically conductive oxide film, the atomic percentage of zinc to the total of zinc, indium, and tin is in the range of about 1 at % through about 9 at %, the atomic ratio of tin to zinc is about 1 or more, the atomic percentage of tin to the total of zinc, indium, and tin is about 20 at % or less, and at least a portion thereof has crystallinity. An electronic apparatus provided with such a transparent electrically conductive oxide film as at least a portion of the electric circuit thereof, a target for forming a transparent electrically conductive oxide film, and a method for fabricating a substrate provided with a transparent electrically conductive oxide film are also disclosed.
摘要翻译：透明导电氧化物膜由包含氧化铟，氧化锡和氧化锌的复合氧化物组成，并且包括至少在连接部分中锡含量高于锌含量的连接部分，并且至少连接截面具有结晶度。或者，在透明导电氧化物膜中，锌与锌，铟和锡的总量的原子百分比在约1at％至约9at％的范围内，锡与锌的原子比为约1 以上，锡与锌，铟和锡的合计的原子百分比为约20原子％以下，其至少一部分具有结晶性。一种具有至少一部分电路的透明导电氧化膜的电子设备，形成透明导电氧化物膜的靶，以及具有透明导电氧化膜的基板的制造方法，也披露。

4. 发明授权

US06432755B1 Thin film transistor and manufacturing method therefor 有权
公开(公告)号：US06432755B1
公开(公告)日：2002-08-13
申请号：US09938068
申请日：2001-08-22
申请人： Chae Gee Sung , Jo Gyoo Chul
发明人： Chae Gee Sung , Jo Gyoo Chul
IPC分类号： H01L2184
摘要： A TFT structure having sufficiently low resistance wiring is provided, in which characteristic defects thereof caused by undercuts in a barrier metal layer can be prevented, the undercuts formed in a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper, and barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.

5. 发明授权

US06350995B1 Thin film transistor and manufacturing method therefore 有权
标题翻译：因此薄膜晶体管及其制造方法
公开(公告)号：US06350995B1
公开(公告)日：2002-02-26
申请号：US09599772
申请日：2000-06-22
申请人： Chae Gee Sung , Jo Gyoo Chul
发明人： Chae Gee Sung , Jo Gyoo Chul
IPC分类号： H01L0100
CPC分类号： H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A TFT structure having sufficiently low resistance wiring is provided. The present invention prevents the characteristic defects caused by undercuts in a barrier metal layer. In the prior art, the undercuts are formed by a step for processing a source and a drain electrode composed of copper. The TFT structure of the present invention comprises a gate electrode on a glass substrate, a gate insulation film, a semiconductor active layer disposed on the gate insulation film so as to oppose the gate electrode, ohmic contact layers formed on both edge portions of the semiconductor active layer, and a source and a drain electrode connected to the semiconductor active layer via the respective ohmic contact layers. In addition, the source electrode and the drain electrode are formed of copper. Barrier metal layers are formed on the bottom surfaces of the source electrode and the drain electrode above areas at which the upper surfaces of the respective ohmic contact layers are located.
摘要翻译：提供具有足够低电阻布线的TFT结构。本发明防止了阻挡金属层中的底切引起的特征缺陷。在现有技术中，通过用于处理由铜组成的源电极和漏电极的步骤来形成底切。本发明的TFT结构包括在玻璃基板上的栅极电极，栅极绝缘膜，设置在栅极绝缘膜上以与栅电极相对的半导体有源层，形成在半导体的两个边缘部分上的欧姆接触层有源层以及经由各个欧姆接触层与半导体有源层连接的源极和漏极。此外，源电极和漏电极由铜形成。阻挡金属层形成在源电极和漏电极的底表面上方各欧姆接触层的上表面所在的区域上方。

6. 发明授权

US06587170B2 Liquid crystal display device having a light shielding matrix 有权
标题翻译：具有遮光矩阵的液晶显示装置
公开(公告)号：US06587170B2
公开(公告)日：2003-07-01
申请号：US09854504
申请日：2001-05-15
申请人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
发明人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
IPC分类号： G02F111336
CPC分类号： G02F1/133512 , G02F1/134363
摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.
摘要翻译：一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

7. 发明授权

US06278504B1 Thin film transistor for liquid crystal display device having a semiconductor layer's width smaller than a width of the gate, drain and source electrodes 失效
标题翻译：具有半导体层的宽度小于栅极，漏极和源极的宽度的液晶显示装置用薄膜晶体管
公开(公告)号：US06278504B1
公开(公告)日：2001-08-21
申请号：US08787463
申请日：1997-01-22
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： G02F1136
CPC分类号： G02F1/1368
摘要： A thin film transistor for liquid crystal display device including a gate electrode 42 formed on a transparent substrate 41, an insulation layer 43 formed to cover the upper surface of the transparent substrate and the gate electrode, a semiconductor layer 46 formed on the insulating layer in confrontation with the gate electrode, an etching stopper layer 44 formed on the semiconductor layer and a source electrode 49 and a drain electrode 50 disposed adjacent to each other in confrontation on both the sides of the semiconductor layer over the etching stopper layer, the semiconductor layer and the insulation layer is arranged such that the gate electrode is formed to such a size as to conceal the semiconductor layer from the transparent substrate side and the line width of the source electrode and the drain electrode is made larger than the width of the semiconductor layer along the same direction as the line width. With this arrangement, there can be provided a thin film transistor for liquid crystal display device capable of suppressing the leak current of the semiconductor layer and lowering the off-current of the thin film transistor and a liquid crystal display device including the thin film transistor.
摘要翻译：一种用于液晶显示装置的薄膜晶体管，包括形成在透明基板41上的栅电极42，覆盖透明基板的上表面的绝缘层43和栅电极，形成在绝缘层上的半导体层46 与栅极电极对置，在半导体层上形成的蚀刻停止层44和在蚀刻停止层上的半导体层的两侧上相对设置的源电极49和漏电极50，半导体层并且绝缘层被布置成使得栅极形成为使得半导体层从透明基板侧隐藏起来的尺寸，并且使源电极和漏电极的线宽大于半导体层的宽度沿与线宽相同的方向。利用这种布置，可以提供一种能够抑制半导体层的漏电流并降低薄膜晶体管的截止电流的液晶显示装置用薄膜晶体管，以及包含该薄膜晶体管的液晶显示装置。

8. 发明授权

US06271903B1 Liquid crystal display device having a light shielding matrix 失效
标题翻译：具有遮光矩阵的液晶显示装置
公开(公告)号：US06271903B1
公开(公告)日：2001-08-07
申请号：US09012041
申请日：1998-01-22
申请人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
发明人： Hyunho Shin , Chae Gee Sung , Kouji Takashina
IPC分类号： G02F11333
CPC分类号： G02F1/133512 , G02F1/134363
摘要： A liquid crystal display device composed of: a first substrate and a second substrates; a liquid crystal layer provided between the first and second substrates; a plurality of pixel regions provided on the surface opposing the second substrate of the first substrate, each of which pixel regions has at least one pixel electrode and a common electrode for cooperatively applying an electric field in a direction along the surface of the first substrate; and a conductive light shielding matrix provided on the surface opposing the first substrate of the second substrate which light shielding matrix has openings each corresponding to a display region of each of the pixel regions and shades non-display regions other than the pixel regions; in which the light shielding matrix and the common electrode are set to substantially the same voltage.
摘要翻译：一种液晶显示装置，包括：第一基板和第二基板; 设置在第一和第二基板之间的液晶层; 设置在与第一基板的第二基板相对的表面上的多个像素区域，每个像素区域具有至少一个像素电极和用于在沿着第一基板的表面的方向上协同施加电场的公共电极; 以及设置在与所述第二基板的所述第一基板相对的表面上的导电遮光矩阵，所述遮光矩阵具有各自对应于每个所述像素区域的显示区域的开口并遮蔽除所述像素区域之外的非显示区域; 其中遮光矩阵和公共电极被设置为基本上相同的电压。

9. 发明授权

US6166794A Liquid crystal device including gate insulating film and layer insulating film having different dielectric constants 失效
标题翻译：包括具有不同介电常数的栅绝缘膜和层绝缘膜的液晶器件
公开(公告)号：US6166794A
公开(公告)日：2000-12-26
申请号：US897243
申请日：1997-07-18
申请人： Chae Gee Sung
发明人： Chae Gee Sung
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
CPC分类号： G02F1/1368
摘要： A liquid crystal display device comprises a first substrate, a second substrate disposed opposite to the first substrate, a liquid crystal sealed in a space between the first and the second substrate, gate lines formed in longitudinal rows on the first. substrate, layer insulating film formed over the gate lines, source lines formed in transverse lines on the layer insulating film so as to form a matrix with the gate lines, thin-film transistors each electrically connected to the gate line and the source line, pixel electrodes formed in regions demarcated by the intersecting gate lines and the source lines and connected to the thin-film transistors, respectively, and gate insulating film interposed between the gate electrodes of the thin-film transistors and an active semiconductor layer. The dielectric constant of the gate insulating film being greater than that of the layer insulating film, and the liquid crystal display has a small parasitic capacitance which increases delay in signal transmission.
摘要翻译：液晶显示装置包括第一基板，与第一基板相对设置的第二基板，密封在第一和第二基板之间的空间中的液晶，在第一基板上形成为纵向行的栅极线。在栅极线上形成的基板，层间绝缘膜，形成在层间绝缘膜上的横向线上的源极线，以形成具有栅极线的矩阵，每个电连接到栅极线和源极线的薄膜晶体管，像素在由相交的栅极线和源极线划分并分别连接到薄膜晶体管的区域中形成的电极和介于薄膜晶体管的栅电极和有源半导体层之间的栅极绝缘膜。栅极绝缘膜的介电常数大于层间绝缘膜的介电常数，液晶显示器具有较小的寄生电容，增加了信号传输的延迟。

10. 发明授权

US06417900B1 Liquid crystal display unit with conductive light-shielding member having substantially the same potential as common electrode 失效
标题翻译：液晶显示单元，其具有与公共电极基本相同的电位的导电遮光构件
公开(公告)号：US06417900B1
公开(公告)日：2002-07-09
申请号：US09044568
申请日：1998-03-19
申请人： Hyunho Shin , Kuniaki Suzuki , Chae Gee Sung
发明人： Hyunho Shin , Kuniaki Suzuki , Chae Gee Sung
IPC分类号： G02F11333
CPC分类号： G02F1/133512 , G02F2001/136218
摘要： A liquid crystal display unit has wider viewing angles and a brighter display. In this display unit, an alignment film is not required to be processed for alignment of a liquid crystal, thereby simplifying the manufacturing process. A first substrate and a second substrate are disposed such that they face each other. A liquid crystal having a negative anisotropy of dielectric constant is provided between the substrates. A common electrode and an alignment film which has a pretilt angle of 90°±1° and which is not rubbed are sequentially disposed on the surface of the first substrate facing the second substrate. A plurality of pixel electrodes are provided on the surface of the second substrate facing the first substrate so as to cover a display area of the liquid crystal. A conductive light-shielding member is disposed on the second substrate and positioned around each of the pixel electrodes in a non-display area of the liquid crystal. The conductive light-shielding member is electrically insulated from the pixel electrode. An alignment film which has a pretilt angle of 90°±1° and which is not rubbed is formed on the pixel electrodes and on the light-shielding members. The conductive light-shielding member is set at substantially the same potential as the common electrode.
摘要翻译：液晶显示单元具有更宽的视角和更亮的显示。在该显示单元中，不需要对液晶的取向进行取向膜的取向膜，因此简化了制造工序。第一基板和第二基板被设置为使得它们彼此面对。在基板之间设置具有负的各向异性介电常数的液晶。在第一基板的面向第二基板的表面上依次设置具有90°±1°的预倾角并且不被摩擦的公共电极和取向膜。在与第一基板相对的第二基板的表面上设置多个像素电极以覆盖液晶的显示区域。导电遮光构件设置在第二基板上并且位于液晶的非显示区域中的每个像素电极周围。导电遮光部件与像素电极电绝缘。在像素电极和遮光构件上形成具有90°±1°的预倾角且不被摩擦的取向膜。导电遮光部件被设定为与公共电极大致相同的电位。

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