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1. 发明授权

US06787831B2 Barrier stack with improved barrier properties 有权
标题翻译：阻隔层具有改善的阻隔性能
公开(公告)号：US06787831B2
公开(公告)日：2004-09-07
申请号：US10050246
申请日：2002-01-15
申请人： Bum Ki Moon , Gerhard Adolf Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
发明人： Bum Ki Moon , Gerhard Adolf Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An barrier stack for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier slack includes first and second barrier layers formed from, for example, Ir, Ru, Pd, Rh, or alloys thereof. The first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation (RTO) prior to formation of the second barrier layer. The RTO forms a thin oxide layer on the surface of the first barrier layer. The thin oxide layer passivates the grain boundaries of the first barrier layer as well as promoting mismatching of the grain boundaries of the first and second barrier layer.
摘要翻译：公开了用于抑制诸如O 2的原子或分子扩散的阻挡层。阻挡松弛包括由例如Ir，Ru，Pd，Rh或其合金形成的第一和第二阻挡层。在形成第二阻挡层之前，使用例如快速热氧化（RTO）将第一阻挡层用O 2钝化。 RTO在第一阻挡层的表面上形成薄的氧化物层。薄氧化物层钝化第一阻挡层的晶界，并促进第一和第二阻挡层的晶界的不匹配。

2. 发明授权

US06583507B1 Barrier for capacitor over plug structures 失效
标题翻译：电容器插塞结构的屏障
公开(公告)号：US06583507B1
公开(公告)日：2003-06-24
申请号：US10134071
申请日：2002-04-26
申请人： Bum Ki Moon , Nicolas Nagel , Gerhard Adolf Beitel
发明人： Bum Ki Moon , Nicolas Nagel , Gerhard Adolf Beitel
IPC分类号： H01L2348
CPC分类号： H01L28/55 , H01L27/11502
摘要： An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrOx. Above the barrier stack is formed a capacitor.
摘要翻译：公开了一种用于减少电容器插头结构中的插塞氧化的改进的阻挡层。势垒堆叠形成在氧化钛的非导电性粘附层上。势垒堆叠包括第一和第二阻挡层，其中第二阻挡层覆盖第一阻挡层的顶表面和侧壁。在一个实施例中，第一阻挡层包括Ir，第二阻挡层包含IrOx。势垒叠层上方形成电容器。

3. 发明授权

US07009230B2 Barrier stack with improved barrier properties 失效
标题翻译：阻隔层具有改善的阻隔性能
公开(公告)号：US07009230B2
公开(公告)日：2006-03-07
申请号：US10604323
申请日：2003-07-10
申请人： Bum Ki Moon , Gerhard Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
发明人： Bum Ki Moon , Gerhard Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An improved barrier stack for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers. In one embodiment, the first barrier layer comprises first and second sub-barrier layers having mismatched grain boundaries. The sub-barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the sub-barrier layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second sub-barrier layer. The second barrier layer comprises a conductive oxide.
摘要翻译：公开了用于抑制原子或分子扩散的改进的阻挡层，例如O 2。势垒堆叠在电容器超过插塞结构中特别有用，以防止插塞氧化，这可能不利地影响结构的可靠性。阻挡层包括第一和第二阻挡层。在一个实施例中，第一阻挡层包括具有失配的晶界的第一和第二子阻挡层。亚阻挡层选自例如Ir，Ru，Pd，Rh或其合金。通过提供错配的晶界，子阻挡层的界面阻挡氧的扩散路径。为了进一步增强阻挡性能，使用例如快速热氧化，第一阻挡层用O 2 2钝化。 RTO在第一阻挡层的表面上形成薄的氧化物层。氧化物层可以有利地促进第一和第二子阻挡层的晶界的失配。第二阻挡层包括导电氧化物。

4. 发明授权

US09859565B2 Ultrafast reliable silicon enabled battery and associated methods 有权
公开(公告)号：US09859565B2
公开(公告)日：2018-01-02
申请号：US13931539
申请日：2013-06-28
申请人： Zhaohui Chen , Yang Liu , Charles W. Holzwarth , Nicolas Cirigliano , Bum Ki Moon
发明人： Zhaohui Chen , Yang Liu , Charles W. Holzwarth , Nicolas Cirigliano , Bum Ki Moon
IPC分类号： H01M4/70 , H01M4/78 , H01M10/24 , H01M4/66 , H01M4/48 , H01M4/24 , H01M4/38 , H01M4/58 , H01M10/04 , H01M10/28 , H01M6/40
CPC分类号： H01M4/66 , H01M4/24 , H01M4/38 , H01M4/48 , H01M4/5815 , H01M4/661 , H01M4/667 , H01M4/78 , H01M6/40 , H01M10/0436 , H01M10/287 , H01M2300/0014 , Y10T29/49115
摘要： Ultrafast battery devices having enhanced reliability and power density are provided. Such batteries can include a cathode including a first silicon substrate having a cathode structured surface, an anode including a second silicon substrate having an anode structured surface positioned adjacent to the cathode such that the cathode structured surface faces the anode structured surface, and an electrolyte disposed between the cathode and the anode. The anode structured surface can be coated with an anodic active material and the cathode structured surface can be coated with a cathodic active material.

5. 发明申请

US20140078644A1 ENERGY STORAGE DEVICE, METHOD OF MANUFACTURING SAME, AND MOBILE ELECTRONIC DEVICE CONTAINING SAME 有权
标题翻译：能量储存装置，其制造方法和含有其的移动电子装置
公开(公告)号：US20140078644A1
公开(公告)日：2014-03-20
申请号：US13621354
申请日：2012-09-17
申请人： Donald S. Gardner , Wei Jin , Zhaohui Chen , Charles W. Holzwarth , Cary L. Pint , Bum Ki Moon , John L. Gustafson
发明人： Donald S. Gardner , Wei Jin , Zhaohui Chen , Charles W. Holzwarth , Cary L. Pint , Bum Ki Moon , John L. Gustafson
IPC分类号： H01G11/26 , H01G9/00
CPC分类号： H01G11/26 , H01G9/0029 , H01G11/04 , H01G11/30 , H01G11/86 , H01L28/82 , Y02E60/13 , Y10T29/417
摘要： An energy storage device includes a first electrode (110, 510) including a first plurality of channels (111, 512) that contain a first electrolyte (150, 514) and a second electrode (120, 520) including a second plurality of channels (121, 522) that contain a second electrolyte (524). The first electrode has a first surface (115, 511) and the second electrode has a second surface (125, 521). At least one of the first and second electrodes is a porous silicon electrode, and at least one of the first and second surfaces comprises a passivating layer (535).
摘要翻译：能量存储装置包括包括第一多个通道（111,512）的第一电极（110,510），第一电极包含第一电解质（150,514）和包括第二多个通道的第二电极（120,520） 121,522），其包含第二电解质（524）。第一电极具有第一表面（115,511），第二电极具有第二表面（125,521）。第一和第二电极中的至少一个是多孔硅电极，并且第一表面和第二表面中的至少一个包括钝化层（535）。

6. 发明申请

US20120205238A1 Electro Chemical Deposition Systems and Methods of Manufacturing Using the Same 有权
标题翻译：电化学沉积系统及其使用方法
公开(公告)号：US20120205238A1
公开(公告)日：2012-08-16
申请号：US13452298
申请日：2012-04-20
申请人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
发明人： Moosung Chae , Bum Ki Moon , Sun-Oo Kim , Danny Pak-Chum Shum
IPC分类号： C25D21/12 , C25D17/00
CPC分类号： H01L21/76877 , C25D5/02 , C25D17/001 , C25D17/007 , C25D17/12 , C25D21/12 , H01L21/2885
摘要： An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.
摘要翻译：描述了用于在半导体晶片上形成特征的电化学沉积系统。电化学沉积通过为包括阴极，阳极和多个电独立辅助电极的电极供电来执行。

7. 发明授权

US07229918B2 Nitrogen rich barrier layers and methods of fabrication thereof 有权
标题翻译：富氮阻挡层及其制造方法
公开(公告)号：US07229918B2
公开(公告)日：2007-06-12
申请号：US11057631
申请日：2005-02-14
申请人： Bum Ki Moon
发明人： Bum Ki Moon
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L2221/1078
摘要： Methods of forming barrier layers and structures thereof are disclosed. A nitrogen rich region is formed at a top surface of a barrier layer by exposing the barrier layer to a nitridation treatment. The nitrogen rich region increases the oxidation resistance of the barrier layer. The barrier layers have improved diffusion barrier properties. A stack of barrier layers may be formed, with one or more of the barrier layers in the stack being exposed to a nitridation treatment.
摘要翻译：公开了形成阻挡层的方法及其结构。通过将阻挡层暴露于氮化处理，在阻挡层的顶表面上形成富氮区域。富氮区增加了阻挡层的抗氧化性。阻挡层具有改善的扩散阻挡性能。可以形成一叠阻挡层，其中堆叠中的一个或多个阻挡层暴露于氮化处理。

8. 发明授权

US09947485B2 Three dimensional energy storage device, method of manufacturing same, and mobile electronic device containing same 有权
公开(公告)号：US09947485B2
公开(公告)日：2018-04-17
申请号：US13929224
申请日：2013-06-27
申请人： Yang Liu , Priyanka Pande , Bum Ki Moon , Michael C. Graf , Donald S. Gardner , Nicolas Cirigliano , Shanthi Murali , Zhaohui Chen
发明人： Yang Liu , Priyanka Pande , Bum Ki Moon , Michael C. Graf , Donald S. Gardner , Nicolas Cirigliano , Shanthi Murali , Zhaohui Chen
IPC分类号： H01G11/48 , H01G11/26 , H01G11/46 , H01G11/50 , H01M4/02 , H01M2/14 , H01M2/16 , H01M4/04 , H01M4/13 , H01M4/139 , H01M4/70 , H01M6/40 , H01M10/052 , H01M10/058 , H01M4/131 , H01M4/136 , H01M4/58 , H01M10/0565 , H01G11/84
CPC分类号： H01G11/84 , H01G11/26 , H01G11/46 , H01G11/50 , H01M2/145 , H01M2/1673 , H01M4/0421 , H01M4/0433 , H01M4/0473 , H01M4/13 , H01M4/131 , H01M4/136 , H01M4/139 , H01M4/5815 , H01M4/70 , H01M6/40 , H01M10/052 , H01M10/0565 , H01M10/058 , H01M2004/021 , H01M2004/025 , H01M2220/30 , Y02E60/13 , Y02T10/7011 , Y02T10/7022 , Y10T29/49108 , Y10T29/49115
摘要： An energy storage device includes an electrode made from an active material in which a plurality of channels have been etched. The channels are coated with an electrically functional substance selected from a conductor and an electrolyte.

9. 发明授权

US08618635B2 Capacitors in integrated circuits and methods of fabrication thereof 有权
标题翻译：集成电路中的电容器及其制造方法
公开(公告)号：US08618635B2
公开(公告)日：2013-12-31
申请号：US12913550
申请日：2010-10-27
申请人： Sunoo Kim , Moosung Chae , Bum Ki Moon
发明人： Sunoo Kim , Moosung Chae , Bum Ki Moon
IPC分类号： H01L21/02
CPC分类号： H01L28/87 , H01G4/002 , H01G4/005 , H01L23/5223 , H01L28/60 , H01L28/90 , H01L28/92 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. Second metal bars and second vias are disposed in a second via level, the second metal bars are coupled to the first potential node. The second metal bars are longer than the second vias. The second via level is above the first via level and the first metal bars are parallel to the second metal bars. Each of the first metal bars has a first end, an opposite second end, and a middle portion between the first and the second ends. Each of the middle portions of the first metal bars and the second ends of the first metal bars do not contact any metal line.
摘要翻译：在一个实施例中，电容器包括具有第一金属棒和第一通孔的第一通孔级，使得第一金属棒耦合到第一电位节点。第一金属条比第一通孔长。第二金属棒和第二通孔设置在第二通孔级中，第二金属棒耦合到第一电位节点。第二金属棒比第二通孔长。第二通孔电平高于第一通孔电平，第一金属棒平行于第二金属棒。每个第一金属棒具有第一端，相对的第二端和在第一端和第二端之间的中间部分。第一金属棒的中间部分和第一金属棒的第二端不接触任何金属线。

10. 发明申请

US20100171185A1 Semiconductor Devices and Methods of Manufacture Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100171185A1
公开(公告)日：2010-07-08
申请号：US12728813
申请日：2010-03-22
申请人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
发明人： Bum Ki Moon , Danny Pak-Chum Shum , Moosung Chae
IPC分类号： H01L23/48 , H01L29/78
CPC分类号： H01L21/76831 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.
摘要翻译：公开了半导体器件及其制造方法。优选实施例包括形成阻挡层的方法。形成阻挡层的方法包括提供工件，在工件上形成第一材料层，第一材料层包括氮化物基金属化合物。在第一材料层上形成第二材料层。第二材料层包括Ta或Ti。阻挡层包括第一材料层和至少第二材料层。

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