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    • 7. 发明申请
    • SEMICONDUCTOR DEVICE MANUFACTURING PLATFORM WITH SINGLE AND TWINNED PROCESSING CHAMBERS
    • 半导体器件制造平台与单和双工艺加热器
    • WO2014163791A1
    • 2014-10-09
    • PCT/US2014/016476
    • 2014-02-14
    • APPLIED MATERIALS, INC
    • MERRY, NirRICE, Michael, RobertKOSHTI, Sushant, S.HUDGENS, Jeffrey, C.
    • H01L21/02
    • H01L21/6719H01L21/67196
    • A transfer chamber for semiconductor device manufacturing includes (1) a plurality of sides that define a region configured to maintain a vacuum level and allow transport of substrates between processing chambers, the plurality of sides defining a first portion and a second portion of the transfer chamber and including (a) a first side that couples to two twinned processing chambers; and (b) a second side that couples to a single processing chamber; (2) a first substrate handler located in the first portion of the transfer chamber; (3) a second substrate handler located in the second portion of the transfer chamber; and (4) a hand-off location configured to allow substrates to be passed between the first portion and the second portion of the transfer chamber using the first and second substrate handlers. Method aspects are also provided.
    • 用于半导体器件制造的传送室包括(1)限定被配置为保持真空度并允许在处理室之间传送衬底的区域的多个侧面,所述多个侧面限定传送室的第一部分和第二部分 并且包括(a)耦合到两个孪生处理室的第一面; 和(b)耦合到单个处理室的第二侧; (2)位于传送室的第一部分中的第一衬底处理器; (3)位于所述传送室的第二部分中的第二衬底处理器; 和(4)切换位置,其配置为允许基板使用第一和第二基板处理器在传送室的第一部分和第二部分之间通过。 还提供了方法方面。