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1. 发明公开

EP1307896A2 EXTERNALLY EXCITED TORROIDAL PLASMA SOURCE 审中-公开
标题翻译： OUTSIDE建议的TORROIDFÖRMIGE等离子体源
公开(公告)号：EP1307896A2
公开(公告)日：2003-05-07
申请号：EP01964028.3
申请日：2001-08-13
申请人： Applied Materials, Inc.
发明人： HANAWA, Hiroji , YE, Yan , COLLINS, Kenneth, S. , RAMASWAMY, Kartik , NGUYEN, Andrew , TANAKA, Tsutomu
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.

2. 发明授权

EP1561234B1 SPATIALLY SEPARATE RESONANT STRUCTURE WITH SPATIALLY DISTINCT PLASMA SECONDARIES USING A SINGLE GENERATOR AND SWITCHING ELEMENTS 有权
标题翻译：共振结构LTV分离血浆二次碾使用单台发电机和电路元件
公开(公告)号：EP1561234B1
公开(公告)日：2008-11-26
申请号：EP03810777.7
申请日：2003-10-10
申请人： APPLIED MATERIALS, INC.
发明人： HANAWA, Hiroji , RAMASWAMY, Katik , COLLINS, Kenneth, S. , NGUYEN, Andrew , MONROY, Gonzalo, Antonio , TANAKA, Tsutomu , YE, Yan
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.

3. 发明公开

EP1561234A2 METHOD TO DRIVE SPATIALLY SEPARATE RESONANT STRUCTURE WITH SPATIALLY DISTINCT PLASMA SECONDARIES USING A SINGLE GENERATOR AND SWITCHING ELEMENTS 有权
标题翻译：共振结构LTV分离血浆二次碾使用单台发电机和电路元件
公开(公告)号：EP1561234A2
公开(公告)日：2005-08-10
申请号：EP03810777.7
申请日：2003-10-10
申请人： Applied Materials, Inc.
发明人： HANAWA, Hiroji , RAMASWAMY, Kartik , COLLINS, Kenneth, S. , NGUYEN, Andrew , MONROY, Gonzalo, Antonio
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.

4. 发明申请

WO2020096723A1 RADIO FREQUENCY FILTER SYSTEM FOR A PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2020096723A1
公开(公告)日：2020-05-14
申请号：PCT/US2019/055314
申请日：2019-10-09
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , CHAFIN, Michael G. , LIU, Lu , RAYAROTH, Anilkumar
IPC分类号： H03H7/01 , H03H1/00 , H01J37/32
摘要： A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.

5. 发明申请

WO2015138399A1 TEMPERATURE RAMPING USING GAS DISTRIBUTION PLATE HEAT 审中-公开
标题翻译：使用气体分配板温度的温度调整
公开(公告)号：WO2015138399A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/019619
申请日：2015-03-10
申请人： APPLIED MATERIALS, INC.
发明人： BELOSTOTSKIY, Sergey G. , DINH, Chinh , ZHOU, Qingjun , NEMANI, Srinivas D. , NGUYEN, Andrew
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01L21/263
摘要： A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.
摘要翻译：提供了一种用于蚀刻设置在基板上的电介质层的方法。该方法包括在蚀刻处理室中从静电卡盘取下基板，并在基板从静电卡盘脱卡的同时循环蚀刻电介质层。循环蚀刻包括在提供到蚀刻处理室中的蚀刻气体混合物中远程产生等离子体，以在第一温度下蚀刻设置在基板上的电介质层。蚀刻介电层产生蚀刻副产物。循环蚀刻还包括将衬底垂直移动到蚀刻处理室中的气体分配板，并且使升华气体从气体分配板朝向衬底流动以升华蚀刻副产物。升华在第二温度下进行，其中第二温度大于第一温度。

6. 发明申请

WO2015119737A1 INLINE DPS CHAMBER HARDWARE DESIGN TO ENABLE AXIS SYMMETRY FOR IMPROVED FLOW CONDUCTANCE AND UNIFORMITY 审中-公开
标题翻译：在线DPS室硬件设计，使轴向对称改进流动导通和均匀性
公开(公告)号：WO2015119737A1
公开(公告)日：2015-08-13
申请号：PCT/US2015/010652
申请日：2015-01-08
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , SARODE VISHWANATH, Yogananda , CHO, Tom K.
IPC分类号： H01L21/02
CPC分类号： H01J37/32834 , H01J37/321 , H01J37/32449 , H01J37/32623
摘要： The present disclosure generally relates to apparatus and methods for symmetry in electrical field, gas flow and thermal distribution in a processing chamber to achieve process uniformity. Embodiment of the present disclosure includes a plasma processing chamber having a plasma source, a substrate support assembly and a vacuum pump aligned along the same central axis to create substantially symmetrical flow paths, electrical field, and thermal distribution in the plasma processing chamber resulting in improved process uniformity and reduced skew.
摘要翻译：本发明一般涉及在处理室中的电场对称性，气流和热分布的装置和方法，以实现工艺的均匀性。本公开的实施例包括具有等离子体源，基板支撑组件和沿着相同中心轴对准的真空泵的等离子体处理室，以在等离子体处理室中产生基本上对称的流动路径，电场和热分布，从而改善工艺均匀性和倾斜度降低。

7. 发明申请

WO2014172142A1 PRESSURE CONTROLLER CONFIGURATION FOR SEMICONDUCTOR PROCESSING APPLICATIONS 审中-公开
标题翻译：半导体加工应用的压力控制器配置
公开(公告)号：WO2014172142A1
公开(公告)日：2014-10-23
申请号：PCT/US2014/033263
申请日：2014-04-08
申请人： APPLIED MATERIALS, INC
发明人： BELOSTOTSKIY, Sergey G. , NGUYEN, Andrew , DINH, Jonathan , LIN, Ying-Sheng
IPC分类号： H01L21/02
CPC分类号： H01L21/67017 , H01L21/67253 , Y10T137/0396 , Y10T137/85986 , Y10T137/86002
摘要： An exemplary semiconductor processing system may include a processing chamber and a first pressure regulating device coupled with the processing chamber. A second pressure regulating device may also be coupled with the processing chamber separate from the first pressure regulating device. A first pump may be fluidly coupled with the first pressure regulating device and fluidly isolated from the second pressure regulating device. A second fluid pump may be fluidly coupled with the second pressure regulating device.
摘要翻译：示例性的半导体处理系统可以包括处理室和与处理室耦合的第一压力调节装置。第二压力调节装置还可以与处理室联接，与第一压力调节装置分开。第一泵可以与第一压力调节装置流体耦合并且与第二压力调节装置流体隔离。第二流体泵可以与第二压力调节装置流体耦合。

8. 发明申请

WO2013162962A1 THREE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH INDIVIDUALLY CONTROLLED COIL CURRENTS FROM A SINGLE RF POWER GENERATOR 审中-公开
标题翻译：来自单个RF发电机的三线圈感应耦合等离子体源，具有单独控制的线圈电流
公开(公告)号：WO2013162962A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/036897
申请日：2013-04-17
申请人： APPLIED MATERIALS, INC.
发明人： DORF, Leonid , RAUF, Shahid , LIU, Jonathan , KENNEY, Jason A. , NGUYEN, Andrew , COLLINS, Kenneth S. , RAMASWAMY, Kartik , LANE, Steven
IPC分类号： H05H1/46 , H03H7/40
CPC分类号： H01J37/32183 , H01J37/32082
摘要： An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.
摘要翻译：电感耦合等离子体反应器具有三个同心线圈天线和分流器电路，其分别控制三个线圈天线中的每一个中的电流，通过响应于从一个线圈天线接收的线圈天线之间的期望的电流分配，改变分流器电路中的两个可变阻抗元件用户界面。

9. 发明申请

WO2012054689A2 SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 审中-公开
标题翻译：具有对称进料结构的基板支撑
公开(公告)号：WO2012054689A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/057024
申请日：2011-10-20
申请人： APPLIED MATERIALS, INC. , LIN, Xing , BUCHBERGER, Douglas A., Jr. , ZHOU, Xiaoping , NGUYEN, Andrew , SHEYNER, Anchel
发明人： LIN, Xing , BUCHBERGER, Douglas A., Jr. , ZHOU, Xiaoping , NGUYEN, Andrew , SHEYNER, Anchel
IPC分类号： H01L21/683 , H01L21/687 , H01L21/3065 , H02N13/00
CPC分类号： H01L21/67069 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
摘要翻译：这里公开了用于处理衬底的设备。在一些实施例中，衬底支撑件可以包括衬底支撑件，该衬底支撑件具有用于支撑衬底的支撑表面，该衬底支撑件具有中心轴线; 第一电极，所述第一电极设置在所述基板支撑件内，以当设置在所述支撑表面上时向基板提供RF功率; 内导体，所述内导体在所述第一电极的与所述支撑表面相对的表面的中心周围联接到所述第一电极，其中所述内导体是管状的并且在远离所述支撑表面的方向上从所述第一电极平行于所述中心轴线并且围绕所述中心轴线延伸的衬底支撑件; 围绕内导体设置的外导体; 以及设置在内部和外部导体之间的外部介电层，外部介电层将外部导体与内部导体电隔离。外导体可以连接到电气地。

10. 发明申请

WO2012018557A2 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 审中-公开
标题翻译：具有主动均匀转向的对称甚高频等离子功率耦合器
公开(公告)号：WO2012018557A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/045023
申请日：2011-07-22
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
发明人： COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

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