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1. 发明申请

US20080121907A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080121907A1
公开(公告)日：2008-05-29
申请号：US11309445
申请日：2006-08-08
申请人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
发明人： Way-Jze Wen , Yi-Fong Lin , Huan-Che Tseng , Shyi-Ming Pan , Fen-Ren Chien , Kuo-Ruei Huang , Wen-Joe Song
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/32 , H01L33/44 , H01L2933/0016
摘要： An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.
摘要翻译： LED包括基板，第一类型掺杂半导体层，第一电极，发光层，第二类型掺杂半导体层，第二电极，第一介电层和第一导电插塞。在基板上形成第一型掺杂半导体层，依次在第一型掺杂半导体层的一部分上形成发光层，第二型掺杂半导体层和第二电极。第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。此外，第二电极与第二类型掺杂半导体层电连接。

2. 发明申请

US20070170596A1 Flip-chip light emitting diode with high light-emitting efficiency 审中-公开
标题翻译：倒装芯片发光二极管具有较高的发光效率
公开(公告)号：US20070170596A1
公开(公告)日：2007-07-26
申请号：US11339622
申请日：2006-01-26
申请人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Fen Chien
发明人： Way-Jze Wen , Yi-Fong Lin , Shyi-Ming Pan , Fen Chien
IPC分类号： H01L23/52
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2924/01004 , H01L2924/01012 , H01L2924/01029 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/3025 , H01L2924/00014
摘要： A flip-chip light emitting diode with high light-emitting efficiency is disclosed. The LED includes a transparent conductive layer, an oxide layer, a reflective metal layer, a conductive layer, and a protective diffusion layer sequentially disposed over a p-type semiconductor layer. Thereby, light emitting from a light-emitting layer toward the p-type semiconductor layer is reflected and penetrating a transparent substrate and emitting outwards. Thus the problem of light shielded from the flip-chip type LED is solved and the light-emitting efficiency is improved. Furthermore, the present invention disposes the LED chip in a face-down orientation on a conductive substrate by flip-chip technology so as to enhance heat-dissipation efficiency of the LED.
摘要翻译：公开了一种具有高发光效率的倒装芯片发光二极管。 LED包括依次设置在p型半导体层上的透明导电层，氧化物层，反射金属层，导电层和保护性扩散层。由此，从发光层朝向p型半导体层发光的光被反射并透过透明基板并向外发射。因此解决了从倒装型LED遮光的问题，提高了发光效率。此外，本发明通过倒装芯片技术将LED芯片以面朝下的方式配置在导电基板上，从而提高LED的散热效率。

3. 发明申请

US20070200119A1 FLIP-CHIP LED PACKAGE AND LED CHIP 审中-公开
标题翻译： FLIP-CHIP LED封装和LED芯片
公开(公告)号：US20070200119A1
公开(公告)日：2007-08-30
申请号：US11307875
申请日：2006-02-26
申请人： Yun-Li Li , Way-Jze Wen , Fen-Ren Chien
发明人： Yun-Li Li , Way-Jze Wen , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L33/20
摘要： A light emitting diode (LED) chip mainly includes a substrate, a first type doped semiconductor layer, light-emitting layers, second type doped semiconductor layers, a first electrode and second electrodes. The first type doped semiconductor layer is disposed on the substrate and includes protrusions which is upward extended; the light-emitting layers are disposed on the corresponding protrusions respectively; the second type doped semiconductor layers are disposed on the corresponding light-emitting layers respectively; the first electrode is disposed on the first type doped semiconductor layer except the protrusions and electrically connected to the first type doped semiconductor layer; the second electrodes are disposed on the corresponding second type doped semiconductor layers respectively; and the first electrode is electrically insulated from the second electrodes.
摘要翻译：发光二极管（LED）芯片主要包括基板，第一类型掺杂半导体层，发光层，第二类型掺杂半导体层，第一电极和第二电极。所述第一掺杂半导体层设置在所述基板上，并且包括向上延伸的突起; 发光层分别设置在相应的凸起上; 第二类掺杂半导体层分别设置在相应的发光层上; 第一电极设置在除了突起之外的第一类型掺杂半导体层上，并电连接到第一类型掺杂半导体层; 第二电极分别设置在相应的第二类型的掺杂半导体层上; 并且第一电极与第二电极电绝缘。

4. 发明申请

US20060163592A1 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060163592A1
公开(公告)日：2006-07-27
申请号：US11109345
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L29/22
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

5. 发明授权

US07768022B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07768022B2
公开(公告)日：2010-08-03
申请号：US11109345
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

6. 发明申请

US20080188021A1 LIGHT EMITTING DIODE AND METHOD MAKING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080188021A1
公开(公告)日：2008-08-07
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/02
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

7. 发明授权

US07355209B2 Light emitting diode and method making the same 有权
标题翻译：发光二极管及方法制作相同
公开(公告)号：US07355209B2
公开(公告)日：2008-04-08
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

8. 发明申请

US20100279443A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100279443A1
公开(公告)日：2010-11-04
申请号：US12833648
申请日：2010-07-09
申请人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
发明人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

9. 发明申请

US20070272930A1 LIGHT-EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20070272930A1
公开(公告)日：2007-11-29
申请号：US11308926
申请日：2006-05-26
申请人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
发明人： Huan-Che Tseng , Way-Jze Wen , Shyi-Ming Pan
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/60 , H01L2224/16225
摘要： A light-emitting diode package (LED package) includes a LED and a carrier. The LED includes a substrate, a semiconductor layer, a first electrode and a second electrode. The semiconductor layer is located on a surface of the substrate and has a rough surface. The semiconductor layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer and a light-emitting layer disposed between the two doped semiconductor layers. The first electrode and the second electrode are disposed on and electrically coupled the first-type doped semiconductor layer and the second-type doped semiconductor layer, respectively. The carrier has a rough carrying surface and includes a first contact pad and a second contact pad disposed on the rough carrying surface. The first electrode and the second electrode of the LED face the carrier and are electrically coupled to the first contact pad and a second contact pad, respectively.
摘要翻译：发光二极管封装（LED封装）包括LED和载体。 LED包括基板，半导体层，第一电极和第二电极。半导体层位于基板的表面上，具有粗糙的表面。半导体层包括第一掺杂半导体层，第二掺杂半导体层和设置在两个掺杂半导体层之间的发光层。第一电极和第二电极分别设置在第一掺杂半导体层和第二掺杂半导体层上并电耦合。载体具有粗糙的承载表面，并且包括设置在粗糙承载表面上的第一接触焊盘和第二接触焊盘。 LED的第一电极和第二电极面向载体并且分别电耦合到第一接触焊盘和第二接触焊盘。

10. 发明申请

US20070141749A1 Die attachment method for LED chip and structure thereof 审中-公开
标题翻译： LED芯片贴片方法及其结构
公开(公告)号：US20070141749A1
公开(公告)日：2007-06-21
申请号：US11311243
申请日：2005-12-20
申请人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
发明人： Yi-Fong Lin , Shyi-Ming Pan , Way-Jze Wen , Fen-Ren Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/62 , H01L24/28 , H01L2924/01079 , H01L2924/12041 , H01L2924/00
摘要： A die attachment method for LED chips and the structure thereof are disclosed. While attaching a LED chip to a substrate, surface of two bonding material is ionized by ultrasonic waves so as to make the attachment of a LED chip to a substrate is under low temperature operating condition and having better heat dissipation structure.
摘要翻译：公开了一种LED芯片的芯片附着方法及其结构。当将LED芯片附着到基板上时，通过超声波将两个接合材料的表面电离，以使LED芯片与基板的连接处于低温工作状态并具有更好的散热结构。

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