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1. 发明授权

US5394424A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5394424A
公开(公告)日：1995-02-28
申请号：US91719
申请日：1993-07-14
申请人： Tetsuro Ijichi , Michinori Irikawa , Ranjit S. Mand , Jingming Xu
发明人： Tetsuro Ijichi , Michinori Irikawa , Ranjit S. Mand , Jingming Xu
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231
摘要： There is provided a semiconductor laser device capable of emitting a laser beam having stable transverse modes. A ridge type semiconductor laser device comprises an upper clad layer 15 left on its active layer to a thickness (d) between 0.25 and 0.50 m in order to ensure a stable production of fundamental transverse modes for laser operation and a rib-shaped clad layer 16 having a bottom width (W) between 2.0 .mu.m and 3.5 .mu.m and projecting from the upper clad layer in juxtaposition with the light emitting region of the active layer 13. When d and W are found within the respective ranges, the device emits a laser beam having stable transverse modes.
摘要翻译：提供了能够发射具有稳定的横向模式的激光束的半导体激光装置。脊型半导体激光器件包括在其有源层上留下的上覆层15至厚度（d）在0.25和0.50μm之间，以确保稳定地产生用于激光器操作的基本横模和肋形覆层16 具有2.0μm和3.5μm之间的底部宽度（W）并且从上部包覆层与有源层13的发光区域并置突出。当在相应的范围内发现d和W时，器件发射激光束具有稳定的横向模式。

2. 发明授权

US5251224A Quantum barrier semiconductor optical device 失效
标题翻译：量子垒半导体光学器件
公开(公告)号：US5251224A
公开(公告)日：1993-10-05
申请号：US789201
申请日：1991-11-08
申请人： Michinori Irikawa , Masayuki Iwase
发明人： Michinori Irikawa , Masayuki Iwase
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34313 , H01S5/3434 , H01S5/2013 , H01S5/3211 , H01S5/32391 , H01S5/3403 , H01S5/34306 , Y10S977/72 , Y10S977/759 , Y10S977/761
摘要： The quantum barrier semiconductor optical devices according to this invention are characterized by strained layer super lattice multiple quantum barriers provided between active layer and p-clad layer or within p-clad layer to obtain resonance scattering of incident overflowing electrons, that is to realize phase condition in which the incident overflowing electron wave and reflected electron wave enhance each other, in the double heterostructure where active layer having at least one GaInAs(P) layer is sandwiched between n-clad layer and p-clad layer. In this case, the active layer should desirably have quantum well structure. The quantum barrier semiconductor optical device comprises a DCCtype double heterostructure made by growing an n-clad layer, a fist active layer having at least one GaInAs(P) sub-layer, a middle clad layer, a second active layer having at least one GaThAS(p) sub-layer, and a p-clad layer in the order of mention or vice versa and a super lattice resonance scattering type quantum barriers provided between the first active layer and middle clad layer or in the middle clad layer and/or between the second active layer and p-clad layer or within p-clad layer. In this case also, the active layer should desirably have quantum well structure and the quantum barriers should desirably be made up of strained layer super lattice.

3. 发明授权

US5583878A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5583878A
公开(公告)日：1996-12-10
申请号：US264570
申请日：1994-06-23
申请人： Hitoshi Shimizu , Michinori Irikawa
发明人： Hitoshi Shimizu , Michinori Irikawa
IPC分类号： H01S5/20 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2013 , H01S5/3407
摘要： There is provided a semiconductor optical device having remarkable features including a low threshold current, a high light emitting efficiency, a high and stable optical output, a fast modulation capability, a large gain characteristics, resistance against oxidization, a high quality and a high degree of processibility. The device comprises a pair of optical confinement layers 13, 17 and a pair of cladding layers 12 and 18 arranged on and under an active layer 15 to produce a SCH structure, at least one of said optical confinement layers 13 and 17 comprising multiquantum barrier (MQB) structures 14, 16 as part thereof. If the active layer 15 is of multiquantum well type, the barrier layer 15a of the active layer 15 also comprises a multiquantum barrier (MQB) structure. With such an arrangement, the barrier height of the barrier layer 15a and the optical confinement layers 13, 17 can be made very high relative to the active layer 15 (well layer 15b). Such a semiconductor optical device can effectively suppress any overflow of carriers from the active layer 15 (well layer 15b) into the optical confinement layers 13, 17 and further into the cladding layers so that it shows a low and stable threshold current, an enhanced optical output power, an improved high-speed modulation performance and a quick responsiveness.
摘要翻译：提供一种具有显着特征的半导体光学器件，包括低阈值电流，高发光效率，高稳定的光输出，快速调制能力，大增益特性，耐氧化性，高品质和高度的可加工性。该器件包括一对光限制层13,17和布置在有源层15上和之下的一对包覆层12和18以产生SCH结构，所述光限制层13和17中的至少一个包括多量势垒（ MQB）结构14,16作为其一部分。如果有源层15是多量阱型，则有源层15的势垒层15a还包括多量子阱（MQB）结构。通过这样的布置，可以使势垒层15a和光限制层13,17的势垒高度相对于有源层15（阱层15b）非常高。这样的半导体光学器件可以有效地抑制载流子从有源层15（阱层15b）到光限制层13,17的进一步进入包层的任何溢出，使得其显示出低且稳定的阈值电流，增强的光输出功率，改进的高速调制性能和快速响应性。

4. 发明授权

US5470786A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5470786A
公开(公告)日：1995-11-28
申请号：US214256
申请日：1994-03-17
申请人： Michinori Irikawa , Masayuki Iwase
发明人： Michinori Irikawa , Masayuki Iwase
IPC分类号： H01S5/223 , H01S5/343 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/2231 , H01S5/2235 , H01S5/343 , H01S5/34306 , H01S5/3434 , Y10S148/095
摘要： A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.
摘要翻译：一种半导体激光器件，包括半导体衬底，具有有源层的多层双异质结构，一对包覆层，脊状波导结构和形成在半导体衬底和有源层之间的限流结构。通过这样的布置，注入电流不仅在有源层的脊上方，而且在有源层的衬底侧上变窄，以改善阈值电流及其电流限制性能。当脊的两个横向沟槽嵌入树脂层时，可以使脊条宽度窄，以提高器件的阈值电流。当有源层以具有两个有源层并且夹在其间的中间覆盖层的DCC结构实现时，器件将显示出低阈值电流圆形光束发散和稳定的热特性。

5. 发明授权

US5432124A Method of manufacturing compound semiconductor 失效
标题翻译：制造化合物半导体的方法
公开(公告)号：US5432124A
公开(公告)日：1995-07-11
申请号：US268526
申请日：1994-07-06
申请人： Kazuaki Nishikata , Yuji Hiratani , Michinori Irikawa
发明人： Kazuaki Nishikata , Yuji Hiratani , Michinori Irikawa
IPC分类号： C30B23/02 , H01L21/20
CPC分类号： C30B23/02 , C30B29/40
摘要： There is provide a method of manufacturing a compound semiconductor (MBE) that can make the substrate surface of the semiconductor highly clean and plane so that no impurity may be left between the substrate surface and the grown crystal layer. In the step of cleaning a substrate with MBE, the substrate surface is irradiated with V molecular beams that cannot be significantly deposited out of molecular beams to be used for the crystal growth step, said V molecular beams being irradiated under a condition of P.sub.1 .ltoreq.(P.sub.2 .times.1/2), where P.sub.1 is the pressure of V molecular beams and P.sub.2 is the pressure of molecular beams in the crystal growth step and the temperature of the substrate surface is raised by heating until stabilized group III surfaces appear on the substrate surface. A very cleanand smooth substrate surface can be obtained with such an arrangement. Harmful impurities can be completely eliminated from the interface of the substrate and the crystal. The formation of a buffer layer can be effectively prevented in the initial stages of crystal growth. In short, high-quality compound semiconductors can be produced on a reliable basis.
摘要翻译：提供一种制造化合物半导体（MBE）的方法，其可以使半导体的衬底表面高度清洁并且平面，使得在衬底表面和生长的晶体层之间不会留下杂质。在用MBE清洗衬底的步骤中，用不能显着沉积在用于晶体生长步骤的分子束中的V分子束照射衬底表面，所述V分子束在P1 < =（P2x1 / 2），其中P1是V分子束的压力，P2是晶体生长步骤中的分子束的压力，并且通过加热升高基板表面的温度直到稳定的III族表面出现在基板表面上。可以通过这种布置获得非常干净和光滑的基底表面。可以从基板和晶体的界面完全消除有害的杂质。在晶体生长的初始阶段可以有效地防止形成缓冲层。总之，高质量的化合物半导体可以在可靠的基础上生产。

6. 发明授权

US5521935A Strained superlattice light emitting device 失效
标题翻译：应变超晶格发光器件
公开(公告)号：US5521935A
公开(公告)日：1996-05-28
申请号：US364283
申请日：1994-12-27
申请人： Michinori Irikawa
发明人： Michinori Irikawa
IPC分类号： H01L33/06 , H01L33/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01S2302/00 , H01S5/3404 , H01S5/3406 , H01S5/343 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： There is provided a strained superlattice light emitting device for emitting light with a wavelength band around 0.8 .mu.m that is free from polarization dependency or can emit light either in the TE or TM mode with an output level much higher than that of an ordinary bulk layer, regardless of the density of injected current or carriers. Such a device comprises an InP substrate 1 and a pair of latticematched cladding layers 2 and 6 arranged on the substrate 1 and including first and second conductive type Al(Ga) InAs layers and an active layer 4 sandwiched by the pair of cladding layers 2 and 6 and having a strained superlattice structure, wherein the well layers 4a and 4b of the active layer 4 strained superlattice structure are respectively a GaInAsP layer showing an inplane tensile strain of 0.3 to 3% relative to the substrate and a GaInAsP layer showing an in-plane compressive strain of 0.3 to 3% relative to the substrate and the barrier layer 4b of the strained superlattice structure comprises an AlGaInAs layer.
摘要翻译：提供了一种应变超晶格发光器件，用于发射波长带大约0.8μm的光，其没有偏振依赖性，或者可以以TE或TM模式发光，其输出水平远高于普通体层的输出水平，不管注入电流或载流子的密度如何。这种器件包括InP衬底1和布置在衬底1上并包括第一和第二导电型Al（Ga）InAs层的一对网格掩模覆层2和6，以及由一对覆层2和并且具有应变超晶格结构，其中应变超晶格结构的有源层4的阱层4a和4b分别是相对于衬底显示出0.3〜3％的面内拉伸应变的GaInAsP层，相对于衬底的平面压缩应变为0.3至3％，并且应变超晶格结构的势垒层4b包括AlGaInAs层。

7. 发明授权

US5319661A Semiconductor double heterostructure laser device with InP current blocking layer 失效
标题翻译：具有InP电流阻挡层的半导体双异质结构激光器件
公开(公告)号：US5319661A
公开(公告)日：1994-06-07
申请号：US77191
申请日：1993-06-16
申请人： Michinori Irikawa , Masayuki Iwase
发明人： Michinori Irikawa , Masayuki Iwase
IPC分类号： H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/2231 , H01S5/2235 , H01S5/343 , H01S5/34306 , H01S5/3434 , Y10S148/095
摘要： A semiconductor laser device comprising a semiconductor substrate, a multi-layered double heterostructure having active layers, a pair of cladding layers, a ridged waveguide structure and a current confining structure formed between the semiconductor substrate and the active layer. With such an arrangement, injected current is narrowed not only on the side above the ridge of the active layer but also on the substrate side of the active layer to improve the threshold current and its current confinement performance. When the two lateral trenches of the ridge are embedded with resin layers, the ridge stripe width can be made narrow to improve the threshold current of the device. When the active layer is realized in a DCC structure having two active layers and having an intermediary clad layer sandwiched therebetween, the device will show a low threshold current circular beam divergence and stabilized thermal characteristics.
摘要翻译：一种半导体激光器件，包括半导体衬底，具有有源层的多层双异质结构，一对包覆层，脊状波导结构和形成在半导体衬底和有源层之间的限流结构。通过这样的布置，注入电流不仅在有源层的脊上方，而且在有源层的衬底侧上变窄，以改善阈值电流及其电流限制性能。当脊的两个横向沟槽嵌入树脂层时，可以使脊条宽度窄，以提高器件的阈值电流。当有源层以具有两个有源层并且夹在其间的中间覆盖层的DCC结构实现时，器件将显示出低阈值电流圆形光束发散和稳定的热特性。

8. 发明授权

US5926585A Waveguide type light receiving element 失效
标题翻译：波导型光接收元件
公开(公告)号：US5926585A
公开(公告)日：1999-07-20
申请号：US849189
申请日：1997-07-18
申请人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
发明人： Michinori Irikawa , Kazuaki Nishikata , Takehiko Nomura
IPC分类号： H01L31/10 , G02F1/017 , H01L31/0232 , H01L31/109 , G02B6/12
CPC分类号： H01L31/109 , B82Y20/00 , H01L31/0232 , G02F1/01708 , G02F2001/01766
摘要： A waveguide type light receiving element (10) comprises a photodetector section (14), a photo-attenuator section (18), and an electrical isolation section (20) having a light transmission property which electrically isolates the photodetector section from the photo-attenuator section for allowing light transmission. The photodetector section comprises n-type light guide layer (28) and i-type light absorption layer (30) formed on a substrate (22), and a pair of n- and p-type light confinement layers (26 and 32) which sandwich the light guide layer and the light absorption layer therebetween, thereby forming a double hetero junction structure. The photo-attenuator section has a layer structure similar to the photodetector section except for a strained MQW layer disposed instead of the light absorption layer and has an absorption controlling electrode (16) and an electrode (40) disposed on the top and bottom, respectively, of the substrate. The light absorption layer and the waveguide of the photodetector section and the photo-attenuator section form a ridge structure to have a light confinement structure in a horizontal direction as well as a light confinement structure in a vertical direction. By applying a reverse bias voltage between the electrodes of the photo-attenuator section, the amount of absorption of the incident light by the photo-attenuator section can be controlled, thereby controlling the intensity of light propagated to the photodetector section.
摘要翻译： PCT No.PCT / JP96 / 02425 Sec。 371日期1997年7月18日 102（e）1997年7月18日PCT PCT 1996年8月29日PCT公布。公开号WO97 / 08757 日期1997年3月6日一种波导型光接收元件（10）包括光电检测器部分（14），光衰减器部分（18）和具有光透射特性的电隔离部分（20），其将光电检测器部分来自用于允许光透射的光衰减器部分。光电检测器部分包括形成在基板（22）上的n型光导层（28）和i型光吸收层（30），以及一对n型和p型光限制层（26和32），其中将导光层和光吸收层夹在其间，由此形成双异质结结构。光衰减器部分具有类似于光检测器部分的层结构，除了代替光吸收层设置的应变MQW层，并且分别具有设置在顶部和底部的吸收控制电极（16）和电极（40）的底物。光检测器部分和光衰减器部分的光吸收层和波导形成了在垂直方向上具有在水平方向上的光限制结构和光限制结构的脊结构。通过在光衰减器部分的电极之间施加反向偏置电压，可以控制光衰减器部分的入射光的吸收量，从而控制传播到光电检测器部分的光的强度。

9. 发明授权

US5789765A Photo diode providing high-linearity signal current in response to light receiving signal 失效
标题翻译：光电二极管响应于光接收信号提供高线性度的信号电流
公开(公告)号：US5789765A
公开(公告)日：1998-08-04
申请号：US763217
申请日：1996-12-10
申请人： Kazuaki Nishikata , Michinori Irikawa
发明人： Kazuaki Nishikata , Michinori Irikawa
IPC分类号： H01L31/105 , H01L27/15 , H01L31/12 , H01L31/153 , H01L33/00
CPC分类号： H01L31/105
摘要： A photo diode in which an optical absorption layer and a p-type semiconductor layer neighboring on each other are designed to be at almost the same valence band level (their offset not exceeding 0.05 eV). Preferably the optical absorption layer is a GaInAsP layer with an absorption edge wavelength of 1.65 to 1.55 .mu.m, and the p-type semiconductor layer and lattice-matching with the preceding semiconductor layer are each an AlGaInAs layer with an absorption edge wavelength of 1.55 to 1.30 .mu.m remaining shorter than that of the optical absorption layer.
摘要翻译：其中相邻的光吸收层和p型半导体层被设计成几乎相同的价带电平（它们的偏移不超过0.05eV）的光电二极管。优选地，光吸收层是吸收边缘波长为1.65〜1.55μm的GaInAsP层，p型半导体层和与前一半导体层的晶格匹配为AlGaInAs层，其吸收边缘波长为1.55〜比光吸收层短1.30微米。

10. 发明授权

US5789760A Multiquantum barrier Schottky junction device 失效
标题翻译：多量子屏障肖特基接头装置
公开(公告)号：US5789760A
公开(公告)日：1998-08-04
申请号：US422831
申请日：1995-04-17
申请人： Michinori Irikawa , Kenichi Iga
发明人： Michinori Irikawa , Kenichi Iga
IPC分类号： H01L29/15 , H01L29/47 , H01L29/06 , H01L31/0328
CPC分类号： H01L29/155 , H01L29/475 , Y10S977/761
摘要： There is provided a semiconductor device comprising a Schottky junction having a very low leakage current and a high forward voltage. The device comprises a Schottky junction realized by a semiconductor 4 and a metal 6 and a multiquantum barrier structure 5 disposed on the interface of said semiconductor 4 and said metal 6 and having an effect of reflecting incident carriers as waves �in phase conditions capable of allowing mutual enhancement of the incident and reflected waves!.
摘要翻译：提供了包括具有非常低的漏电流和高正向电压的肖特基结的半导体器件。该器件包括由半导体4和金属6以及设置在所述半导体4和所述金属6的界面上的多量子势垒结构5实现的肖特基结，并且具有将入射载流子作为波[反相条件能够允许事件的相互增强和反映的波浪]。

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