专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08986919B2 Resist composition, method of forming resist pattern and polymeric compound 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案和高分子化合物的形成方法
公开(公告)号：US08986919B2
公开(公告)日：2015-03-24
申请号：US13371151
申请日：2012-02-10
申请人： Daichi Takaki , Daiju Shiono , Masatoshi Arai , Jun Iwashita , Kenri Konno
发明人： Daichi Takaki , Daiju Shiono , Masatoshi Arai , Jun Iwashita , Kenri Konno
IPC分类号： C08F22/02 , C08F220/38 , C08F228/06 , C08F228/02 , C08F220/22 , G03F7/004 , G03F7/039
CPC分类号： C08F228/06 , C08F220/22 , C08F220/38 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A resist composition including a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the base component (A) including a resin component (A1) containing a structural unit (a0-1) having a group represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid.
摘要翻译：一种抗蚀剂组合物，其包含在暴露后产生酸的基体组分（A），并且在酸的作用下在显影液中显示出改变的溶解性，所述基础组分（A）包含含有结构单元（a0-1）的树脂组分（A1）具有由下述通式（a0-1）表示的基团和由可以具有与被取代基取代的具有氢原子键合的含有氢原子并含有酸的丙烯酸酯的结构单元（a1）通过酸的作用显示出极性增加的可分解基团。

2. 发明申请

US20130089819A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND 有权
标题翻译：耐蚀组合物，形成耐蚀图案的方法，聚合物和化合物
公开(公告)号：US20130089819A1
公开(公告)日：2013-04-11
申请号：US13703865
申请日：2011-06-14
申请人： Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
发明人： Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
IPC分类号： G03F7/027
CPC分类号： G03F7/027 , C07C69/54 , C07C309/04 , C07C309/09 , C07C309/10 , C07C309/12 , C07C311/48 , C07C311/51 , C07C381/12 , C07C2601/14 , C07C2603/74 , C08F20/38 , C08F2220/382 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/111 , Y10S430/121
摘要： A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).
摘要翻译：可以形成具有优异的光刻性能的非常精细的抗蚀剂图案的抗蚀剂组合物，可用于抗蚀剂组合物的新的聚合物和可用作聚合物的单体的化合物。抗蚀剂组合物含有含有下述通式（a0）表示的结构单元（a0）的高分子化合物。在式（a0）中，A是由通式（1）或（2）表示的阴离子。

3. 发明授权

US08043795B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08043795B2
公开(公告)日：2011-10-25
申请号：US12441704
申请日：2007-09-18
申请人： Jun Iwashita
发明人： Jun Iwashita
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0035 , G03F7/0048 , G03F7/70466 , Y10S430/114 , Y10S430/128
摘要： Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support 1 to form a first resist film 2; selectively exposing the first resist film 2 through a first mask pattern, and developing it to form a first resist pattern 3; applying a negative resist composition including an organic solvent (S″) containing an alcohol-based organic solvent on the support 1 that the first resist pattern 3 is formed, thereby forming a second resist film 6; and selectively exposing the second resist film 6 through a second mask pattern, and developing it to form a resist pattern denser than the first resist pattern 3.
摘要翻译：公开了一种形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物涂覆在载体1上以形成第一抗蚀剂膜2; 通过第一掩模图案选择性地暴露第一抗蚀剂膜2，并使其显影以形成第一抗蚀剂图案3; 将包含含有醇类有机溶剂的有机溶剂（S“）的负性抗蚀剂组合物涂布在形成第一抗蚀剂图案3的支撑体1上，从而形成第二抗蚀剂膜6; 并且通过第二掩模图案选择性地暴露第二抗蚀剂膜6，并使其显影以形成比第一抗蚀剂图案3更致密的抗蚀剂图案。

4. 发明授权

US07939243B2 Resin, resist composition and method of forming resist pattern 有权
标题翻译：树脂，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07939243B2
公开(公告)日：2011-05-10
申请号：US12160742
申请日：2006-12-26
申请人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
发明人： Masaru Takeshita , Jun Iwashita , Takeshi Iwai , Yuji Ohgomori
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30 , C08F24/00
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0382 , Y10S430/111
摘要： A resist composition including a base resin component (A) and an acid-generator component (B) which generates acid upon exposure, the component (A) including a resin (A1) which has a structural unit (a0) represented by general formula (a-0) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; a represents an integer of 0 to 2; b represents an integer of 1 to 3; c represents an integer of 1 to 2; and a+b is an integer of 2 or more.
摘要翻译：包含曝光时产生酸的基础树脂组分（A）和酸产生剂组分（B）的抗蚀剂组合物包括具有由通式（a）表示的结构单元（a0）的树脂（A1）的组分（A） a-0）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; a表示0〜2的整数， b表示1〜3的整数， c表示1〜2的整数， a + b为2以上的整数。

5. 发明申请

US20090297980A1 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US20090297980A1
公开(公告)日：2009-12-03
申请号：US12453857
申请日：2009-05-26
申请人： Jun Iwashita , Shogo Matsumaru , Sho Abe
发明人： Jun Iwashita , Shogo Matsumaru , Sho Abe
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382 , Y10S430/111
摘要： A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
摘要翻译：形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述碱性组分（A）含有高分子化合物 A1）具有下述通式（a0-1）表示的结构单元（a0），其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基，R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基，或者R 2和R 3结合在一起形成亚烷基，W表示可以包含氧原子的环状亚烷基任意的位置

6. 发明申请

US20090162785A1 POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：聚合物化合物，负极性组合物和形成耐药性图案的方法
公开(公告)号：US20090162785A1
公开(公告)日：2009-06-25
申请号：US12065990
申请日：2006-08-17
申请人： Jun Iwashita , Ayako Kusaka
发明人： Jun Iwashita , Ayako Kusaka
IPC分类号： G03F7/20 , C08G63/06 , G03F7/00
CPC分类号： C08F220/28 , C08F220/26 , G03F7/0046 , G03F7/0382 , Y10S430/114 , Y10S430/115 , Y10S430/128 , Y10S430/146
摘要： There are provided a polymer compound which can form a resist pattern with excellent resolution, and a negative resist composition containing the polymer compound and a resist pattern-forming method thereof.The present invention is a polymer compound containing a structural unit (a0) represented by a general formula (a0-1) shown below. (wherein, R represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R0 represents an alkyl group containing a hydroxyl group.)Also, the present invention is a negative resist composition, including: an alkali soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking agent (C), wherein the alkali soluble resin component (A) contains a polymer compound (A1) having a structural unit (a0) represented by the general formula (a0-1) shown above.
摘要翻译：提供了可以形成具有优异分辨率的抗蚀剂图案的高分子化合物和含有该高分子化合物的抗蚀剂组合物及其抗蚀剂图案形成方法。本发明是含有下述通式（a0-1）表示的结构单元（a0）的高分子化合物。（其中，R表示氢原子，卤素原子，烷基或卤代烷基，R 0表示含有羟基的烷基）。另外，本发明是负极性抗蚀剂组合物，其包含：碱溶性树脂组分（A），暴露时产生酸的酸产生剂组分（B）和交联剂（C），其中碱溶性树脂组分（A）含有具有结构单元的高分子化合物（A1） a0），由上述通式（a0-1）表示。

7. 发明申请

US20090035697A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：负极组合物和形成耐力图案的方法
公开(公告)号：US20090035697A1
公开(公告)日：2009-02-05
申请号：US11909071
申请日：2006-04-07
申请人： Jun Iwashita
发明人： Jun Iwashita
IPC分类号： G03F7/027 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0382 , Y10S430/122 , Y10S430/123
摘要： A chemically amplified negative resist composition is provided in addition to a method of forming a resist pattern from which a desirable pattern shape can be obtained. A negative resist composition in which a resin component (A) contains a resin component (A1) having a structural unit (a1) containing an alicyclic group having a fluorinated hydroxyalkyl group and a structural unit (a2) derived from an acrylic acid ester and containing a hydroxyl group-containing alicyclic group; and an acid generator component (B) contains an acid generator (B1) expressed by the following general formula (B1): (where R51 represents a straight chain, branched chain or cyclic alkyl group or a fluorinated alkyl group; R52 represents a hydrogen atom, hydroxyl group, halogen atom, straight chain, branched chain or cyclic alkyl group, straight chain or branched chain halogenated alkyl group, or straight chain or branched chain alkoxy group; R53 represents an aryl group which may have a substituent; and n represents an integer of 1 to 3).
摘要翻译：除了形成可以获得期望的图案形状的抗蚀图案的方法之外，还提供了化学放大的负光刻胶组合物。一种负型抗蚀剂组合物，其中树脂组分（A）含有具有含有具有氟化羟烷基的脂环族基团的结构单元（a1）和由丙烯酸酯衍生的结构单元（a2）的树脂组分（A1），并含有含羟基的脂环族基团; 酸产生剂成分（B）含有下述通式（B1）表示的酸发生剂（B1）：（式中，R 51表示直链，支链或环状烷基或氟代烷基; R52表示氢原子，羟基，卤素原子，直链，支链或环状烷基，直链或支链卤代烷基，或直链或支链烷氧基; R53表示可以具有取代基的芳基，n表示 1〜3的整数）。

8. 发明授权

US09023581B2 Resist composition, method of forming resist pattern, polymeric compound, and compound 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案的方法，聚合物和化合物
公开(公告)号：US09023581B2
公开(公告)日：2015-05-05
申请号：US13703865
申请日：2011-06-14
申请人： Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
发明人： Akiya Kawaue , Kazushige Dohtani , Yoshiyuki Utsumi , Jun Iwashita , Kenri Konno , Daiju Shiono , Daichi Takaki
IPC分类号： G03F7/004 , G03F7/30 , C07C69/54 , C08F220/38 , G03F7/027 , C07C309/04 , C07C309/09 , C07C309/10 , C07C309/12 , C07C311/48 , C07C311/51 , C07C381/12 , C08F20/38 , G03F7/039 , G03F7/20
CPC分类号： G03F7/027 , C07C69/54 , C07C309/04 , C07C309/09 , C07C309/10 , C07C309/12 , C07C311/48 , C07C311/51 , C07C381/12 , C07C2601/14 , C07C2603/74 , C08F20/38 , C08F2220/382 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/111 , Y10S430/121
摘要： A resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The resist composition contains a polymeric compound containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).
摘要翻译：可以形成具有优异的光刻性能的非常精细的抗蚀剂图案的抗蚀剂组合物，可用于抗蚀剂组合物的新的聚合物和可用作聚合物的单体的化合物。抗蚀剂组合物含有含有下述通式（a0）表示的结构单元（a0）的高分子化合物。在式（a0）中，A是由通式（1）或（2）表示的阴离子。

9. 发明申请

US20120282551A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
标题翻译：耐蚀组合物，形成耐蚀图案和聚合物的方法
公开(公告)号：US20120282551A1
公开(公告)日：2012-11-08
申请号：US13402820
申请日：2012-02-22
申请人： Kensuke MATSUZAWA , Jun IWASHITA , Yoshitaka KOMURO , Masatoshi ARAI
发明人： Kensuke MATSUZAWA , Jun IWASHITA , Yoshitaka KOMURO , Masatoshi ARAI
IPC分类号： C08F228/06 , C08F228/02 , G03F7/20
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/28 , C08F220/38 , C08F228/06 , C08F2220/382 , G03F7/0046 , G03F7/0397 , G03F7/2039 , G03F7/38
摘要： A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.
摘要翻译：一种抗蚀剂组合物，其包含在曝光后产生酸的树脂组分，并且在酸的作用下在显影液中显示出改变的溶解性，所述树脂组分包括具有由通式（a0-0-1）表示的结构单元的树脂组分其中R表示氢原子，1至5个碳原子的烷基或1至5个碳原子的卤代烷基，R 0-1表示单键或二价连接基团，R 2，R 3和R 4各自独立地表示可以具有非芳香族取代基的直链状，支链状或环状的烷基，或者R3和R4可以与硫原子一起形成环，X表示非芳香族二价连接基团或单一债券。

10. 发明申请

US20100273106A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND 有权
标题翻译：正极性组合物，耐火模式的形成方法，聚合物和化合物
公开(公告)号：US20100273106A1
公开(公告)日：2010-10-28
申请号：US12762715
申请日：2010-04-19
申请人： Yoshiyuki Utsumi , Jun Iwashita
发明人： Yoshiyuki Utsumi , Jun Iwashita
IPC分类号： G03F7/004 , G03F7/20 , C08F24/00 , C07D317/46
CPC分类号： G03F7/0397 , C07D317/54 , C08F12/22 , C08F212/14 , C08F212/32 , G03F7/2041
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a0) containing an acid-dissociable, dissolution-inhibiting group, and the acid-dissociable, dissolution-inhibiting group has a 1,3-dioxole skeleton.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱显影液中显示出增加的溶解性的碱成分（A）和暴露时产生酸的酸产生剂成分（B），其中，所述碱成分（A）含有高分子化合物（A1）具有含有酸解离性，溶解抑制基团的结构单元（a0），酸解离性溶解抑制基团具有1,3-二氧杂环戊二烯骨架。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式