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    • 1. 发明授权
    • Ultra-low power limiter
    • 超低功率限幅器
    • US07688561B2
    • 2010-03-30
    • US11360615
    • 2006-02-24
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • Ja-nam KuChung-woul KimYoung-hoon MinIl-jong SongDong-hyun Lee
    • H02H3/20H02H9/04
    • H03K19/00315H03K17/08128
    • An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.
    • 过压保护电路(即限幅器)包括:具有多个半导体元件的第一开关块,它们相互串联并根据输入电压的大小依次导通; 以及多个第二切换块,其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时,通过使漏电流最小化,并且当输入电压高于参考电压时使泄漏电流达到最大值,当输入电压低于参考电压时,限幅器可防止过大的电流流入RF标签电路 电压,并且确保当输入电压低于参考电压时,足够量的电流被提供给调节器。
    • 2. 发明授权
    • Structure for realizing integrated circuit having Schottky diode and method of fabricating the same
    • 用于实现具有肖特基二极管的集成电路的结构及其制造方法
    • US07625804B2
    • 2009-12-01
    • US11963354
    • 2007-12-21
    • Ja-nam KuSeong-hearn LeeIl-jong SongYoung-hoon MinSang-wook Kwon
    • Ja-nam KuSeong-hearn LeeIl-jong SongYoung-hoon MinSang-wook Kwon
    • H01L21/20
    • H01L29/872H01L27/0788
    • An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
    • 一体形成多个肖特基二极管和电容器的集成电路结构。 集成电路结构包括:衬底,其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层,使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层,使得第二导电层与第一导电层和电介质层一起形成电容器。 因此,当在整流电路中使用集成电路结构时,可以减小整个电路的尺寸。
    • 4. 发明授权
    • Rectifier for supplying double voltage and RFID tag thereof
    • 用于提供双电压的整流器和RFID标签
    • US07339485B2
    • 2008-03-04
    • US11356023
    • 2006-02-17
    • Ja-nam KuYoung-hoon MinIl-jong SongDong-hyun Lee
    • Ja-nam KuYoung-hoon MinIl-jong SongDong-hyun Lee
    • G08B21/00H04Q13/14H04Q7/00
    • G06K19/0723G06K19/0713
    • Disclosed is a rectifier for supplying double voltage and an RFID tag thereof. The rectifier includes a charging part for charging an input voltage induced to input ends by a received radio frequency (RF) signal; a power provider for charging a sum voltage corresponding to the sum of the input voltage induced to the input end and the voltage charged in the charging part as a power voltage, and discharging the charged power voltage to provide a direct current (DC) power; and a switching part for switching to supply the input voltage induced at the input ends to the charging part during a first interval and switching to supply the sum voltage to the power provider during a second interval. Accordingly, double voltage can be supplied to other electric elements formed in the RFID tag and overcurrent caused by overvoltage can be prevented from flowing into the elements.
    • 公开了一种用于提供双电压的整流器及其RFID标签。 整流器包括用于通过接收的射频(RF)信号对感应到输入端的输入电压进行充电的充电部分; 电源提供器,用于对与所述输入端感应的输入电压和所述充电部中充电的电压的和相对应的和电压作为电源电压进行充电,并且对所述充电电力电压进行放电以提供直流(DC)电力; 以及切换部,用于切换以在第一间隔期间将在输入端感应的输入电压提供给充电部分,并且在第二间隔期间切换以将和电压提供给电力供应商。 因此,可以向形成在RFID标签中的其他电气元件提供双电压,并且可以防止由过电压引起的过电流流入元件。
    • 7. 发明申请
    • Radio frequency identification tag for transmitting temperature data and method therefor
    • 用于传输温度数据的射频识别标签及其方法
    • US20050270153A1
    • 2005-12-08
    • US11147163
    • 2005-06-08
    • Sang-wook KwonJa-nam KuIl-jong SongYoung-hoon Min
    • Sang-wook KwonJa-nam KuIl-jong SongYoung-hoon Min
    • G06K19/10G06K19/07G08B1/08H04B5/02
    • G06K19/0701G06K19/0723
    • A radio frequency identification tag, used in a radio frequency identification system, includes an antenna unit for receiving an external magnetic wave to generate an induced current; a driving voltage generating unit for converting the induced current into a constant voltage and outputting the constant voltage; and a state detecting unit for detecting information about a change in an operational state of the driving voltage generating unit. The tag further includes a memory for storing temperature data corresponding to the information about the change in the operational state and data needed for identification; and a controlling unit for reading out, from the memory, the temperature data dependent on the information about the change in the operational state detected by the state detecting unit and the identification data. The read temperature and identification data are transmitted via an antenna unit.
    • 在射频识别系统中使用的射频识别标签包括用于接收外部磁波以产生感应电流的天线单元; 驱动电压产生单元,用于将感应电流转换成恒定电压并输出该恒定电压; 以及状态检测单元,用于检测关于驱动电压产生单元的操作状态的变化的信息。 标签还包括用于存储对应于关于操作状态的变化和识别所需的数据的信息的温度数据的存储器; 以及控制单元,用于从存储器读出取决于由状态检测单元检测到的操作状态变化的信息和识别数据的温度数据。 读取温度和识别数据通过天线单元传输。