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1. 发明授权

US08421058B2 Light emitting diode structure having superlattice with reduced electron kinetic energy therein 有权
标题翻译：具有超晶格的发光二极管结构，其中具有降低的电子动能
公开(公告)号：US08421058B2
公开(公告)日：2013-04-16
申请号：US13130649
申请日：2009-11-20
申请人： Wei Liu , Chew Beng Soh , Soo Jin Chua , Jing Hua Teng
发明人： Wei Liu , Chew Beng Soh , Soo Jin Chua , Jing Hua Teng
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/04 , H01L33/08 , H01L33/32
摘要： A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer including the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.
摘要翻译：提供发光二极管结构和形成发光二极管结构的方法。该结构包括超晶格，其包括第一阻挡层; 第一量子阱层，包括形成在第一阻挡层上的第一金属氮化物基材料; 形成在第一量子阱层上的第二阻挡层; 以及第二量子阱层，包括形成在所述第二阻挡层上的所述第一金属氮化物基材料; 并且其中所述第一量子阱层的导带能量与所述第二量子阱层的导带能量之间的差与用于减小所述超晶格中的电子动能的单个或多个纵向光学声子能量匹配。

2. 发明申请

US20110284824A1 LIGHT EMITTING DIODE STRUCTURE AND A METHOD OF FORMING A LIGHT EMITTING DIODE STRUCTURE 有权
标题翻译：发光二极管结构和形成发光二极管结构的方法
公开(公告)号：US20110284824A1
公开(公告)日：2011-11-24
申请号：US13130649
申请日：2009-11-20
申请人： Wei Liu , Chew Beng Soh , Soo Jin Chua , Jing Hua Teng
发明人： Wei Liu , Chew Beng Soh , Soo Jin Chua , Jing Hua Teng
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , H01L33/08 , H01L33/32
摘要： A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer comprising the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.
摘要翻译：提供发光二极管结构和形成发光二极管结构的方法。该结构包括超晶格，其包括第一阻挡层; 第一量子阱层，包括形成在第一阻挡层上的第一金属氮化物基材料; 形成在第一量子阱层上的第二阻挡层; 以及第二量子阱层，包括形成在所述第二阻挡层上的所述第一金属氮化物基材料; 并且其中所述第一量子阱层的导带能量与所述第二量子阱层的导带能量之间的差与用于减小所述超晶格中的电子动能的单个或多个纵向光学声子能量匹配。

3. 发明申请

US20100025653A1 TUNABLE WAVELENGTH LIGHT EMITTING DIODE 有权
标题翻译：可调波长发光二极管
公开(公告)号：US20100025653A1
公开(公告)日：2010-02-04
申请号：US12440330
申请日：2006-09-08
申请人： Chew Beng Soh , Soo Jin Chua , Haryono Hartono
发明人： Chew Beng Soh , Soo Jin Chua , Haryono Hartono
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/08 , B82Y10/00 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/06
摘要： A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.
摘要翻译：一种发光二极管和一种制造发光二极管的方法，二极管具有第一组多量子阱（MQW），第一组中的每个MQW包括提供量子点（QD）成核位置的润湿层或所述每个MQW的阱层中的QD样结构; 和第二组MQW，所述第二组的MQW中的每一个形成为与第一组的MQW相比变化的光致发光（PL）峰值波长。

4. 发明授权

US08436334B2 Fabrication of phosphor free red and white nitride-based LEDs 有权
标题翻译：无磷红和氮化镓基LED的制造
公开(公告)号：US08436334B2
公开(公告)日：2013-05-07
申请号：US12682526
申请日：2007-10-12
申请人： Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
发明人： Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , H01L27/153 , H01L33/08 , H01L33/32
摘要： A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.
摘要翻译：提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。

5. 发明申请

US20100224857A1 FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDs 有权
标题翻译：无磷红色和白色基于LED的制造
公开(公告)号：US20100224857A1
公开(公告)日：2010-09-09
申请号：US12682526
申请日：2007-10-12
申请人： Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
发明人： Chew Beng Soh , Soo Jin Chua , Wei Liu , Jing Hua Teng
IPC分类号： H01L33/06 , H01L21/20
CPC分类号： H01L33/06 , H01L27/153 , H01L33/08 , H01L33/32
摘要： A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.
摘要翻译：提供了用于发光二极管的多量子阱（MQW）结构和用于制造用于发光二极管的MQW结构的方法。 MQW结构包括多个量子阱结构，每个量子阱结构包括：阻挡层; 以及在所述阻挡层上形成有嵌入其中的量子点纳米结构的阱层，所述势垒层和所述阱层包含第一金属氮化物基材料; 其中所述量子阱结构中的至少一个还包括形成在所述阱层上的覆盖层，所述覆盖层包含与所述第一金属氮化物基材料相比具有不同金属元素的第二金属氮化物基材料。

6. 发明申请

US20090001416A1 Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD) 审中-公开
标题翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）模板上生长氮化铟镓（InGaN）
公开(公告)号：US20090001416A1
公开(公告)日：2009-01-01
申请号：US11823756
申请日：2007-06-28
申请人： Soo Jin Chua , Haryono Hartono , Chew Beng Soh
发明人： Soo Jin Chua , Haryono Hartono , Chew Beng Soh
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The porous network in GaN shows nanostructures formed on the surface. Subsequent growth of InGaN shows that it is relaxed on these nanostructures as the area on which the growth takes place is very small. The strain relaxation favors higher indium incorporation. Besides, this porous network creates a relatively rough surface of GaN to modify the surface energy which can enhance the nucleation of impinging indium atoms thereby increasing indium incorporation. It shifts the luminescence from 445 nm for a conventionally grown InGaN structure to 575 nm and enhances the intensity by more than two-fold for the growth technique in the present invention under the same growth conditions. There is also a spectral broadening of the output extending from 480 nm to 720 nm.
摘要翻译： Si掺杂多孔GaN通过紫外增强Pt辅助电化学蚀刻制造，并与低温生长缓冲层一起被用作InGaN生长的模板。 GaN中的多孔网络显示出在表面上形成的纳米结构。 InGaN的后续生长表明，随着生长发生的区域非常小，它们在这些纳米结构上被放宽。应变松弛有利于较高的铟掺入。此外，该多孔网络产生GaN的相对粗糙的表面以改变表面能，这可以增强入射铟原子的成核，从而增加铟掺入。它将常规生长的InGaN结构的发光从445nm偏移到575nm，并且在相同的生长条件下，本发明的生长技术的强度提高了两倍以上。还有从480nm延伸到720nm的输出的谱扩展。

7. 发明授权

US08629425B2 Tunable wavelength light emitting diode 有权
标题翻译：可调波长发光二极管
公开(公告)号：US08629425B2
公开(公告)日：2014-01-14
申请号：US12440330
申请日：2006-09-08
申请人： Chew Beng Soh , Soo Jin Chua , Haryono Hartono
发明人： Chew Beng Soh , Soo Jin Chua , Haryono Hartono
IPC分类号： H01L31/00
CPC分类号： H01L33/08 , B82Y10/00 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/06
摘要： A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.
摘要翻译：一种发光二极管和一种制造发光二极管的方法，二极管具有第一组多量子阱（MQW），第一组中的每个MQW包括提供量子点（QD）成核位置的润湿层或所述每个MQW的阱层中的QD样结构; 和第二组MQW，所述第二组的MQW中的每一个形成为与第一组的MQW相比变化的光致发光（PL）峰值波长。

8. 发明申请

US20130020549A1 SYSTEMS AND METHODS FOR FABRICATING LONGITUDINALLY-SHAPED STRUCTURES 审中-公开
标题翻译：用于制作纵向结构的系统和方法
公开(公告)号：US20130020549A1
公开(公告)日：2013-01-24
申请号：US13532736
申请日：2012-06-25
申请人： Hongfei Liu , Wei Liu , Soo Jin Chua , Chew Beng Soh
发明人： Hongfei Liu , Wei Liu , Soo Jin Chua , Chew Beng Soh
IPC分类号： H01L21/20 , H01L29/06 , B82Y40/00 , B82Y99/00
CPC分类号： H01L21/0254 , B82Y40/00 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02472 , H01L21/0259 , H01L21/02664 , H01L29/0673
摘要： The present invention relates, in some aspects, to systems and methods for fabricating longitudinally-shaped structures such as nanobelt semiconductor structures. In some embodiments, the method comprises: a) providing a substrate selected to promote epitaxial growth thereon a selected growth orientation, b) depositing a crystalline sacrificial layer on the substrate for epitaxially growing along the selected growth orientation, c) forming a film over the sacrificial layer, the film having a crystal lattice structure grown substantially along the selected growth orientation, and d) removing at least part of the sacrificial layer, thereby producing the longitudinally shaped structures from the film by strain redistribution through the crystal lattice structure of the film to crack the film along a selected in-plane axis of the selected growth orientation.
摘要翻译：本发明在一些方面涉及用于制造诸如纳米带半导体结构的纵向结构的系统和方法。在一些实施方案中，所述方法包括：a）提供被选择用于在其上促进选择的生长方向的外延生长的衬底; b）在所述衬底上沉积晶体牺牲层，以沿所选择的生长方向进行外延生长，c）牺牲层，该膜具有基本上沿着所选择的生长方向生长的晶格结构，以及d）去除至少部分牺牲层，从而通过膜的晶格结构通过应变再分布从薄膜产生纵向成形的结构以沿所选择的生长方向的所选择的平面内轴裂开膜。

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