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1. 发明授权

US07310206B2 Magnetic thin film head with heat-assisted write section and hard disk drive incorporating same 有权
标题翻译：具有热辅助写入部分的磁性薄膜头和并入其的硬盘驱动器
公开(公告)号：US07310206B2
公开(公告)日：2007-12-18
申请号：US11022927
申请日：2004-12-28
申请人： Cheng Yih Liu , Mike Chang , Takehiro Kamigama
发明人： Cheng Yih Liu , Mike Chang , Takehiro Kamigama
IPC分类号： G11B5/127
CPC分类号： G11B5/3967 , G11B13/045 , G11B2005/0021
摘要： A thin film magnetic read/write head for use in magnetic data storage systems to enable writing of data to a magnetic data storage medium with the assistance of laser heating. The read/write head allows magnetic reading of data from the storage medium, and thermally assisted magnetic writing of data on the storage medium. A waveguide is provided in a write gap in the form of an optical circuit having a plurality of inputs and a single output at the air bearing surface (ABS) for concentrating laser light used for heating the storage medium during the write operation. The thermally assisted magnetic writing improves the thermal stability of the recorded data and usefulness thereof throughout a wide temperature range.
摘要翻译：一种用于磁数据存储系统的薄膜磁读/写头，用于在激光加热的帮助下将数据写入磁数据存储介质。读/写头允许从存储介质读取数据，并热辅助磁存储介质上的数据写入。波导设置在具有多个输入和在空气轴承表面（ABS）处的单个输出的光学电路形式的写入间隙中，用于在写入操作期间用于集中用于加热存储介质的激光。热辅助磁写提高记录数据的热稳定性及其在宽温度范围内的用途。

2. 发明授权

US07239488B2 MR sensor on an insulating substrate and method of manufacture 有权
标题翻译：绝缘基板上的MR传感器及其制造方法
公开(公告)号：US07239488B2
公开(公告)日：2007-07-03
申请号：US10797653
申请日：2004-03-09
申请人： Li-Yan Zhu , Kazumasa Yasuda , Cheng Yih Liu , Winston Jose
发明人： Li-Yan Zhu , Kazumasa Yasuda , Cheng Yih Liu , Winston Jose
IPC分类号： G11B5/127 , G11B21/21 , G11B5/39
CPC分类号： G11B5/40 , B82Y10/00 , B82Y25/00 , G11B5/11 , G11B5/3906 , G11B2005/3996 , Y10T29/49044
摘要： According to an embodiment of the present invention, a slider design is presented that provides improved protection for the head/sensor of the slider. In one embodiment, the design of the slider is such that ESD protection is provided during the slider wafer process, the “back-end” processes (e.g., when the completed slider/head is incorporated into an HGA), and during operation in a disk drive or the like. In this embodiment, a conductive film is provided that surrounds the insulating-material slider substrate. The conductive film provides a grounding path during the wafer fabrication processes. This conductive layer may be further patterned during head fabrication to provide a ground path for back-end fabrication processes. A conductive stripe may be added for discharging debris in the slider-to-disk interface.
摘要翻译：根据本发明的实施例，提供了一种滑块设计，其为滑块的头部/传感器提供了改进的保护。在一个实施例中，滑块的设计使得在滑块晶片工艺期间提供ESD保护，即“后端”工艺（例如，当完成的滑块/头部结合到HGA中时），以及在磁盘驱动器等。在本实施例中，提供围绕绝缘材料滑块基板的导电膜。导电膜在晶片制造工艺期间提供接地路径。该导电层可以在头部制造期间进一步图案化以提供用于后端制造工艺的接地路径。可以添加导电条，用于在滑块对盘接口中排出碎片。

3. 发明授权

US4113551A Polycrystalline silicon etching with tetramethylammonium hydroxide 失效
标题翻译：聚四氢呋喃氧化镁多晶硅蚀刻
公开(公告)号：US4113551A
公开(公告)日：1978-09-12
申请号：US861373
申请日：1977-12-16
申请人： Ernest Bassous , Cheng-Yih Liu
发明人： Ernest Bassous , Cheng-Yih Liu
IPC分类号： C23F1/10 , H01L21/308 , H01L21/3213 , H01L21/306
CPC分类号： H01L21/32134
摘要： A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.

4. 发明授权

US4171242A Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass 失效
标题翻译：用于在磷硅玻璃存在下蚀刻硅的中性pH硅蚀刻剂
公开(公告)号：US4171242A
公开(公告)日：1979-10-16
申请号：US884678
申请日：1978-03-08
申请人： Cheng-Yih Liu
发明人： Cheng-Yih Liu
IPC分类号： C09K13/08 , H01L21/306 , H01L21/311 , H01L21/316
CPC分类号： H01L21/31654 , C09K13/08 , H01L21/30604 , H01L21/31111
摘要： A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.
摘要翻译：公开了由维持在基本上中性的pH的氟离子和氧的水溶液组成的硅蚀刻剂。蚀刻剂消除了剥离有机光致抗蚀剂的问题，选择性地保持硅/磷硅玻璃，硅表面点蚀，氧化物残余物和不溶性反应产物。

5. 发明授权

US4258079A Preparation of continuous films of diacetylenic polymers 失效
标题翻译：二乙炔聚合物连续薄膜的制备
公开(公告)号：US4258079A
公开(公告)日：1981-03-24
申请号：US103245
申请日：1979-12-13
申请人： James Economy , Mary Ann Flandera , Cheng-Yih Liu
发明人： James Economy , Mary Ann Flandera , Cheng-Yih Liu
IPC分类号： C08F38/00 , B05D3/10 , C09D4/00 , C09D123/26 , C09D137/00 , B05D3/02 , B05D3/06 , B05D3/12
CPC分类号： B05D3/10 , C09D4/00
摘要： Continuous films are formed on a substrate by coating said substrate with a solution of a diacetylenic prepolymer in a liquid phenylacetylene solvent and reacting the solvent with the prepolymer.
摘要翻译：通过用二乙炔预聚物在液体苯乙炔溶剂中的溶液涂布所述基材，在基材上形成连续膜，并使溶剂与预聚物反应。

6. 发明授权

US07345849B2 Magnetic head slider material, magnetic head slider, and method of manufacturing magnetic head slider material 有权
标题翻译：磁头滑块材料，磁头滑块，以及制造磁头滑块材料的方法
公开(公告)号：US07345849B2
公开(公告)日：2008-03-18
申请号：US11166266
申请日：2005-06-27
申请人： Yukio Kawaguchi , Kei Sugiura , Masahiro Itoh , Minoru Sakurabayashi , Atsushi Hitomi , Cheng Yih Liu
发明人： Yukio Kawaguchi , Kei Sugiura , Masahiro Itoh , Minoru Sakurabayashi , Atsushi Hitomi , Cheng Yih Liu
IPC分类号： G11B5/127 , G11B5/60 , C04B35/10 , C04B35/56 , C04B35/00
CPC分类号： G11B5/3136 , B82Y30/00 , C04B35/117 , C04B35/565 , C04B35/575 , C04B35/645 , C04B2235/3217 , C04B2235/3232 , C04B2235/3826 , C04B2235/3843 , C04B2235/422 , C04B2235/5445 , C04B2235/5454 , C04B2235/6581 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , G11B5/10 , G11B5/3106 , G11B5/3169 , G11B5/3173 , G11B5/6005
摘要： The magnetic head slider material of the present invention is constituted by a sintered body containing 100 parts by weight of alumina, 20 to 150 parts by weight of titanium carbide and silicon carbide in total, and 0.2 to 9 parts by weight of carbon.
摘要翻译：本发明的磁头滑块材料由含有100重量份氧化铝，20-150重量份碳化钛和碳化硅总计和0.2-9重量份碳的烧结体构成。

7. 发明授权

US4240845A Method of fabricating random access memory device 失效
标题翻译：制造随机存取存储器件的方法
公开(公告)号：US4240845A
公开(公告)日：1980-12-23
申请号：US118257
申请日：1980-02-04
申请人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , George T. Wenning
发明人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , George T. Wenning
IPC分类号： G11C11/404 , H01L21/033 , H01L21/8242 , H01L27/108 , H01L21/26 , H01L21/223
CPC分类号： H01L27/1085 , G11C11/404 , H01L21/033 , H01L27/10805
摘要： A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure. The electrical capacitance or storage node structure of each cell has increased electrical charge storage capacity and may be considered as a single capacitor. The single (storage) capacitor of each cell is provided between the source of the field effect transistor, a source of reference potential (reference plane) and the monolithic semiconductor substrate on which the memory is fabricated.The arrangement of the memory cells, the structure and material of each of the memory cells, and a method of fabricating the entire memory is disclosed. Also disclosed is an improved field effect transistor structure and process for fabricating same. The process of fabrication, cell arrangement and the improved storage node of each memory cell, as structurally fabricated and uniquely arranged, provides a monolithic memory having improved density and operating characteristics.
摘要翻译：在半导体材料的单片芯片上制造动态随机存取存储器。存储器由被选择性地连接到单元的字和位线读取和写入的存储器单元的阵列形成。每个单元是具有改进的电荷存储能力的单场效应晶体管结构。每个单元的改进的电荷存储能力由唯一地排列和形成为场效应晶体管结构的整体部分的电容结构提供。每个场效应晶体管结构的栅电极连接到预定的一条字线。每个场效应晶体管的漏极连接到预定的一个位线。每个场效应晶体管结构的源极整体连接并形成场效应晶体管结构的唯一排列的电容结构的一部分。每个单元的电容或存储节点结构具有增加的电荷存储容量，并且可以被认为是单个电容器。每个单元的单个（存储）电容器设置在场效应晶体管的源极，参考电位源（参考平面）和其上制造存储器的单片半导体衬底之间。存储单元的布置，每个存储单元的结构和材料以及制造整个存储器的方法都被公开。还公开了一种改进的场效应晶体管结构及其制造方法。每个存储单元的制造，单元布置和改进的存储节点的过程在结构上制造和独特地布置，提供了具有改进的密度和操作特性的单片存储器。

8. 发明授权

US4552831A Fabrication method for controlled via hole process 失效
标题翻译：控制通孔工艺的制作方法
公开(公告)号：US4552831A
公开(公告)日：1985-11-12
申请号：US576991
申请日：1984-02-06
申请人： Cheng-Yih Liu
发明人： Cheng-Yih Liu
IPC分类号： G03F7/00 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/027 , H05K3/00 , G03C5/00 , B05D3/06
CPC分类号： G03F7/38 , H05K3/0017
摘要： A method for forming via holes having a rounded sidewall profile includes exposing a layer or organic positive photoresist to a formic gas plasma while the surface of the photoresist layer is bombarded with ions and electrons in a high voltage biased environment in which the photoresist layer is capacitively coupled. The photoresist layer may be exposed to UV light either before or after the formic gas plasma step.
摘要翻译：用于形成具有圆形侧壁轮廓的通孔的方法包括将层或有机正性光致抗蚀剂暴露于甲酸气体等离子体，同时光致抗蚀剂层的表面在其中光致抗蚀剂层电容性的高电压偏置环境中用离子和电子轰击耦合。光致抗蚀剂层可以在甲酸气体等离子体步骤之前或之后暴露于UV光。

9. 发明授权

US4219834A One-device monolithic random access memory and method of fabricating same 失效
标题翻译：单器件单片随机存取存储器及其制造方法
公开(公告)号：US4219834A
公开(公告)日：1980-08-26
申请号：US850762
申请日：1977-11-11
申请人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , G. Thomas Wenning
发明人： Ronald P. Esch , Robert M. Folsom , Cheng-Yih Liu , Vincent L. Rideout , Donald A. Soderman , G. Thomas Wenning
IPC分类号： G11C11/401 , G11C5/06 , G11C11/404 , G11C11/4097 , H01L21/033 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , H01L29/78 , H01L27/02
CPC分类号： H01L27/1085 , G11C11/404 , G11C11/4097 , G11C5/063 , H01L21/033 , H01L27/10805
摘要： A dynamic random access memory is fabricated on a monolithic chip of semiconductor material. The memory is formed of an array of memory cells controlled for reading and writing by word and bit lines which are selectively connected to the cells. Each cell is a single field effect transistor structure having improved electrical charge storage capability. The improved charge storage capability of each cell is provided by an electrical capacitance structure uniquely arranged and formed as an integral portion of the field effect transistor structure. The gate electrode of each field effect transistor structure is connected to a predetermined one of said word lines. The drain of each field effect transistor is connected to a predetermined one of said bit lines. The source of each field effect transistor structure is integrally connected to and forms a portion of the uniquely arranged electrical capacitance structure of the field effect transistor structure. The electrical capacitance or storage node structure of each cell has increased electrical charge storage capacity and may be considered as a single capacitor. The single (storage) capacitor of each cell is provided between the source of the field effect transistor, a source of reference potential (reference plane) and the monolithic semiconductor substrate on which the memory is fabricated.The arrangement of the memory cells, the structure and material of each of the memory cells, and a method of fabricating the entire memory is disclosed. Also disclosed is an improved field effect transistor structure and process for fabricating same. The process of fabrication, cell arrangement and the improved storage node of each memory cell, as structurally fabricated and uniquely arranged, provides a monolithic memory having improved density and operating characteristics.
摘要翻译：在半导体材料的单片芯片上制造动态随机存取存储器。存储器由被选择性地连接到单元的字和位线读取和写入的存储器单元的阵列形成。每个单元是具有改进的电荷存储能力的单场效应晶体管结构。每个单元的改进的电荷存储能力由唯一地排列和形成为场效应晶体管结构的整体部分的电容结构提供。每个场效应晶体管结构的栅电极连接到预定的一条字线。每个场效应晶体管的漏极连接到预定的一个位线。每个场效应晶体管结构的源极整体连接并形成场效应晶体管结构的唯一排列的电容结构的一部分。每个单元的电容或存储节点结构具有增加的电荷存储容量，并且可以被认为是单个电容器。每个单元的单个（存储）电容器设置在场效应晶体管的源极，参考电位源（参考平面）和其上制造存储器的单片半导体衬底之间。存储单元的布置，每个存储单元的结构和材料以及制造整个存储器的方法都被公开。还公开了一种改进的场效应晶体管结构及其制造方法。每个存储单元的制造，单元布置和改进的存储节点的过程在结构上制造和独特地布置，提供了具有改进的密度和操作特性的单片存储器。

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