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1. 发明申请

WO2006008703A2 NANOSCALE FET 审中-公开
标题翻译： NOSOSCALE FET
公开(公告)号：WO2006008703A2
公开(公告)日：2006-01-26
申请号：PCT/IB2005052313
申请日：2005-07-12
申请人： KONINKL PHILIPS ELECTRONICS NV , SURDEANU RADU , AGARWAL PRABHAT , BALKENENDE ABRAHAM RUDOLF , BAKKERS ERIK P A M
发明人： SURDEANU RADU , AGARWAL PRABHAT , BALKENENDE ABRAHAM RUDOLF , BAKKERS ERIK P A M
IPC分类号： H01L29/06 , H01L29/20 , H01L29/76 , H01L29/78 , H01L21/336 , H01L51/20 , H01L51/30
CPC分类号： H01L29/78 , B82Y10/00 , B82Y40/00 , H01L29/0665 , H01L29/0673 , H01L29/20 , H01L29/76 , Y10S438/962 , Y10S977/762 , Y10S977/818 , Y10S977/938
摘要： A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.
摘要翻译：晶体管器件由具有源极区，漏极区和源极和漏极区之间的沟道区的连续线性纳米结构形成。源极（20）和漏极（26）区域由纳米线形成，沟道区域（24）呈纳米管形式。绝缘栅极（32）设置成与沟道区域（24）相邻，用于控制源极和漏极区域之间的沟道区域的导通。

2. 发明申请

WO2008035273A2 SEMICONDUCTOR SENSOR DEVICE, DIAGNOSTIC INSTRUMENT COMPRISING SUCH A DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：半导体传感器装置，包含这种装置的诊断仪器及其制造方法
公开(公告)号：WO2008035273A2
公开(公告)日：2008-03-27
申请号：PCT/IB2007053742
申请日：2007-09-17
申请人： KONINKL PHILIPS ELECTRONICS NV , KAHYA NERIMAN N , BAKKERS ERIK P A M
发明人： KAHYA NERIMAN N , BAKKERS ERIK P A M
IPC分类号： G01N27/414
CPC分类号： G01N27/4146 , B82Y10/00 , G01N27/127 , H01L29/0665 , H01L29/0673
摘要： The invention relates to a semiconductor sensor device (10) for sensing a substance comprising at least one mesa- shaped semiconductor region (11) which is formed on a surface of a semiconductor body (12) and which is connected at a first end to a first electrically conducting connection region (13) and at a second end to a second electrically conducting connection region (14) while a fluid (20) comprising a substance (30) to be sensed can flow along the mesa- shaped semiconductor region (11) and the substance (30) to be sensed can influence the electrical properties of the mesa-shaped semiconductor region (11), wherein the mesa-shaped semiconductor region (11) comprises viewed in a longitudinal direction subsequently a first semiconductor subregion (1) comprising a first semiconductor material and a second semiconductor subregion (2) comprising a second semiconductor material different from the first semiconductor material. According to the invention the first semiconductor material comprises a IV element material and the second semiconductor material comprises a III-V compound. Due to difference in surface chemistry between subregions 1,2 a substance (30) like an antibody to which a protein signaling a disease can be bonded can be more selectively attached to the desired first region (1).
摘要翻译：本发明涉及一种用于感测包含至少一个台状半导体区域（11）的物质的半导体传感器装置（10），该半导体区域形成在半导体本体（12）的表面上并且在第一端连接到第一导电连接区域（13），并且在第二端处连接到第二导电连接区域（14），同时包括要被感测的物质（30）的流体（20）可沿着台状半导体区域（11）流动，并且待感测的物质（30）可以影响台面状半导体区域（11）的电性能，其中台阶形半导体区域（11）包括纵向方向，随后包括第一半导体子区域（1），第一半导体区域包括不同于第一半导体材料的第二半导体材料的第一半导体材料和第二半导体子区域（2）。根据本发明，第一半导体材料包括IV元素材料，第二半导体材料包含III-V族化合物。由于次区域1,2之间的表面化学差异，可以更有选择地连接到期望的第一区域（1）上，像可以结合疾病的蛋白质的抗体所示的物质（30）。

3. 发明申请

WO2006035325A1 ELECTRIC DEVICE WITH NANOWIRES COMPRISING A PHASE CHANGE MATERIAL 审中-公开
标题翻译：具有包含相变材料的纳米管的电气装置
公开(公告)号：WO2006035325A1
公开(公告)日：2006-04-06
申请号：PCT/IB2005/052729
申请日：2005-08-19
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BAKKERS, Erik, P., A., M. , LANKHORST, Martijn, H., R.
发明人： BAKKERS, Erik, P., A., M. , LANKHORST, Martijn, H., R.
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , B82Y10/00 , G11C13/0004 , G11C13/025 , H01L27/2436 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1625 , Y10S977/762
摘要： The method according to the invention is directed to manufacturing an electric device (100) according to the invention, having a body (102) with a resistor comprising a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The resistor is a nanowire (NW) electrically connecting a first conductor (172, 120) and a second conductor (108, 121). The method comprises the step of providing a body (102) having the first conductor (172, 120), providing the first conductor (172, 120) with the nanowire (NW) thereby electrically connecting the nanowire (NW) and the first conductor (172, 120), and providing the nanowire (NW) with the second conductor (108, 121) thereby electrically connecting the nanowire (NW) and the second conductor (108, 121).
摘要翻译：根据本发明的方法涉及制造根据本发明的电子设备（100），其具有主体（102），其具有电阻器，该电阻器包括在第一相位和第二相位之间可变的相变材料，所述电阻器具有当所述相变材料处于所述第一相位时，所述第一电阻以及当所述相变材料处于所述第二相时与所述第一电阻不同的第二电阻。电阻器是电连接第一导体（172,120）和第二导体（108,121）的纳米线（NW）。该方法包括提供具有第一导体（172,120）的主体（102）的步骤，为第一导体（172,120）提供纳米线（NW），从而电连接纳米线（NW）和第一导体（并且为纳米线（NW）提供第二导体（108,121），由此电连接纳米线（NW）和第二导体（108,121）。

4. 发明申请

WO2006011069A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2006011069A1
公开(公告)日：2006-02-02
申请号：PCT/IB2005/052263
申请日：2005-07-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , HURKX, Godefridus, A., M. , AGARWAL, Prabhat , BALKENENDE, Abraham, R. , MAGNEE, Petrus, H., C. , WAGEMANS, Melanie, M., H. , BAKKERS, Erik, P., A., M. , HIJZEN, Erwin
发明人： HURKX, Godefridus, A., M. , AGARWAL, Prabhat , BALKENENDE, Abraham, R. , MAGNEE, Petrus, H., C. , WAGEMANS, Melanie, M., H. , BAKKERS, Erik, P., A., M. , HIJZEN, Erwin
IPC分类号： H01L29/08
CPC分类号： H01L29/0804 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/0821 , H01L29/7378 , Y10S977/936
摘要： The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.
摘要翻译：本发明涉及具有半导体本体（12）的半导体器件（10），该半导体器件（12）包括分别具有第一导电类型的发射极区，基极区和集电极区（1,2,3）的双极晶体管，与第一导电类型相反的第二导电类型和第一导电类型。发射极或集电极区域（1,3）中的一个包括纳米线（30）。基底区域（2）由半导体本体（12）表面的层（20）形成; 发射极或集电极区域（1,3）中的另一个（3,1）已经形成在基极区域（2）下方的半导体本体（12）中。包括纳米线（30）的发射极或集电极区域（1,3）已经设置在半导体本体（12）的表面上，使得其纵向轴线垂直于该表面延伸。

5. 发明申请

WO2004102684A3 TUNABLE RADIATION EMITTING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2004102684A3
公开(公告)日：2004-11-25
申请号：PCT/IB2004/050671
申请日：2004-05-13
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH , BAKKERS, Erik, P., A., M. , GRABOWSKI, Stefan, P.
发明人： BAKKERS, Erik, P., A., M. , GRABOWSKI, Stefan, P.
IPC分类号： H01L33/00
摘要： There is described a tunable radiation emitting semiconductor device (50) comprising at least one elongated structure (120) at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The at least one structure (120) is thereby operable to emit light radiation therefrom in response to a current flow therethrough. Moreover, the at least one elongated structure (120) is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the at least one elongated structure (120) further comprises an electrode arrangement (190) for applying an electric field to the at least one elongated structure (120) for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the at least one structure (120) in response to the current flow therethrough.

6. 发明申请

WO2004055786A1 OPTICAL INFORMATION RECORDING MEDIUM 审中-公开
标题翻译：光信息记录介质
公开(公告)号：WO2004055786A1
公开(公告)日：2004-07-01
申请号：PCT/IB2003/005253
申请日：2003-11-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KURT, Ralph , BAKKERS, Erik, P., A., M.
发明人： KURT, Ralph , BAKKERS, Erik, P., A., M.
IPC分类号： G11B7/00
CPC分类号： B82Y10/00 , G11B7/005 , G11B7/24038 , G11B7/243 , G11B7/257 , G11B7/26
摘要： The invention relates to an optical information recording medium and methods and devices to record and read information thereto and thereof. The optical information recording medium comprises luminescent nano-elements. The nano-element species differ in at least one luminescence wavelength. Therefore, a specific luminescence signal is obtained in accordance with the nano-element species irradited by a reading light beam. Methods and devices to record and read information by using such optical information recording media are also described.
摘要翻译：本发明涉及一种光学信息记录介质及其信息的记录和读取方法和装置。光学信息记录介质包括发光纳米元件。至少一个发光波长的纳米元件种类不同。因此，根据由读取光束照射的纳米元件种类获得特定的发光信号。还描述了通过使用这种光学信息记录介质来记录和读取信息的方法和设备。

7. 发明申请

WO2008023329A2 METHOD OF MANUFACTURING A SEMICONDUCTOR SENSOR DEVICE AND SEMICONDUCTOR SENSOR DEVICE 审中-公开
标题翻译：制造半导体传感器装置的方法和半导体传感器装置
公开(公告)号：WO2008023329A2
公开(公告)日：2008-02-28
申请号：PCT/IB2007/053328
申请日：2007-08-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WUNNICKE, Olaf , BAKKERS, Erik, P., A., M. , ROEST, Aarnoud, L.
发明人： WUNNICKE, Olaf , BAKKERS, Erik, P., A., M. , ROEST, Aarnoud, L.
IPC分类号： G01N27/414
CPC分类号： G01N27/127
摘要： The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa- shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first electrically conducting connection region (2) and at a second end to a second electrically conducting connection region (3) while a gas or a liquid comprising a substance to be sensed can flow between the mesa-shaped semiconductor regions (1) and the substance to be sensed can influence the electrical properties of the plurality of the mesa-shaped semiconductor regions (1), wherein at the surface of the semiconductor body (11) the first connection region (2) is formed and connected thereto with the first end the plurality of mesa- shaped semiconductor regions (1) is formed, and subsequently the second connection region (3) is formed connected to the plurality of mesa- shaped semiconductor regions (1) at their second end. According to the invention after formation of the plurality of mesa- shaped semiconductor regions (1) the free space between these regions (1) is filled with a fill material (4) that can be selectively removed with respect to the material of the plurality of mesa- shaped semiconductor regions (1) and of other bordering parts of the semiconductor sensor device (10), subsequently a conducting layer (30) is deposited over the resulting structure from which the second connection region (3) is formed whereinafter the fill material (4) is removed by selective removed by which the space between the plurality of mesa- shaped semiconductor regions (1) is made free again. In this way sensor devices (10) are manufacturing with a method that is easily applied on an industrial scale and results in a high yield.
摘要翻译：本发明涉及一种制造用于感测物质的半导体传感器装置（10）的方法，所述物质包括多个相互平行的台面形半导体区域（1），所述台面形状的半导体区域（1）形成在半导体（11），并且其第一端连接到第一导电连接区域（2）并且在第二端连接到第二导电连接区域（3），同时包括待感测物质的气体或液体可以在台面形状的半导体区域（1）与待检测的物质之间的流动会影响多个台面形状的半导体区域（1）的电特性，其中在半导体本体（11）的表面处，第一连接在形成多个台面形状的半导体区域（1）的状态下，形成多个台区域（2）并与其连接，并且随后将所述第二连接区域（3）形成为与所述多个台面形状半导体区域（1）的第二端。根据本发明，在形成多个台面形半导体区域（1）之后，这些区域（1）之间的自由空间填充有填充材料（4），填充材料（4）可以相对于多个（1）以及半导体传感器装置（10）的其他边界部分，然后在形成第二连接区域（3）的所得结构上沉积导电层（30），之后填充材料（4）通过选择性地移除而移除，由此多个台面型半导体区域（1）之间的空间再次释放。通过这种方式，传感器装置（10）采用易于在工业规模上应用并产生高产量的方法来制造。

8. 发明申请

WO2005064639A3 FABRICATING A SET OF SEMICONDUCTING NANOWIRES, AND ELECTRIC DEVICE COMPRISING A SET OF NANOWIRES 审中-公开
标题翻译：制造一套半导体纳米线，以及包含一套纳米线的电子器件
公开(公告)号：WO2005064639A3
公开(公告)日：2006-02-23
申请号：PCT/IB2004052651
申请日：2004-12-03
申请人： KONINKL PHILIPS ELECTRONICS NV , BAKKERS ERIK P A M , FEINER LOUIS F , BALKENENDE ABRAHAM R
发明人： BAKKERS ERIK P A M , FEINER LOUIS F , BALKENENDE ABRAHAM R
IPC分类号： C01B31/02 , G01N33/543
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y15/00 , B82Y20/00 , G01N33/54373 , H01L21/02521 , H01L21/02645 , H01L21/02664 , H01L21/30612 , H01L29/0665 , H01L29/0676 , H01L29/66439 , H01L29/775 , Y10S977/721
摘要： The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10'), at least one pre-fabricated semiconducting nanowire having a wire diameter (d') larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire (10') by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire (10'), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device (100) may comprise a set of nanowires (10) having the desired wire diameter (d). The apparatus (29) may be used to execute the method according to the invention.
摘要翻译：制造具有期望的线直径（d）的一组半导体纳米线（10）的方法包括以下步骤：提供一组预制的半导体纳米线（10'），至少一个预制的半导体纳米线，其具有线直径（d'）大于所需的线径（d），并且通过蚀刻减少所述至少一个预制纳米线（10'）的线径，所述蚀刻由被所述至少一个预制选择的光谱被选择为使得当至少一个预制纳米线达到期望的线直径（d）时，所述至少一个预制纳米线的吸收显着降低。电气设备（100）可以包括具有所需电线直径（d）的一组纳米线（10）。装置（29）可以用于执行根据本发明的方法。

9. 发明申请

WO2006003620A1 METHOD FOR MANUFACTURING AN ELECTRIC DEVICE WITH A LAYER OF CONDUCTIVE MATERIAL CONTACTED BY NANOWIRE 审中-公开
标题翻译：用NANOWIRE接触的导电材料层制造电气装置的方法
公开(公告)号：WO2006003620A1
公开(公告)日：2006-01-12
申请号：PCT/IB2005/052145
申请日：2005-06-28
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN SCHAIJK, Robertus, T., F. , AGARWAL, Prabhat , BAKKERS, Erik, P., A., M. , LANKHORST, Martijn, H., R. , VAN DUUREN, Michiel, J. , BALKENENDE, Abraham, R. , FEINER, Louis, F. , WOERLEE, Pierre, H.
发明人： VAN SCHAIJK, Robertus, T., F. , AGARWAL, Prabhat , BAKKERS, Erik, P., A., M. , LANKHORST, Martijn, H., R. , VAN DUUREN, Michiel, J. , BALKENENDE, Abraham, R. , FEINER, Louis, F. , WOERLEE, Pierre, H.
IPC分类号： H01L21/768
CPC分类号： H01L45/1273 , B82Y10/00 , G11C13/0004 , G11C13/025 , G11C2213/81 , H01L21/28525 , H01L21/76879 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/16
摘要： The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.
摘要翻译：根据本发明的电子设备（100）包括存储材料的层（107），其具有可在第一值和第二值之间切换的电阻率。记忆材料可以是相变材料。电气设备（100）还包括一组电气连接电气设备的第一端子（172）和存储器材料层（107）的纳米线（NW），从而使得能够经由纳米线从第一端子传导电流（NW）和存储器材料层（107）连接到电气设备的第二端子（272）。每个纳米线（NW）在相应的接触区域中电接触存储器材料的层（107）。所有接触区域基本相同。根据本发明的方法适用于制造根据本发明的电子设备（100）。

10. 发明申请

WO2005124872A1 NANOWIRE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：纳米半导体器件
公开(公告)号：WO2005124872A1
公开(公告)日：2005-12-29
申请号：PCT/IB2005/051843
申请日：2005-06-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , HIJZEN, Erwin, A. , BAKKERS, Erik, P., A., M. , HUETING, Raymond, J., E. , BALKENENDE, Abraham, R.
发明人： HIJZEN, Erwin, A. , BAKKERS, Erik, P., A., M. , HUETING, Raymond, J., E. , BALKENENDE, Abraham, R.
IPC分类号： H01L29/775
CPC分类号： H01L29/775 , B82Y10/00 , H01L21/0237 , H01L21/02458 , H01L21/02532 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/267 , H01L29/66666 , H01L29/78642 , H01L29/78681 , H01L29/78696 , H01L29/861 , H01L29/872 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2924/0002 , Y10S977/70 , Y10S977/701 , Y10S977/707 , Y10S977/72 , Y10S977/721 , Y10S977/722 , Y10S977/723 , Y10S977/742 , Y10S977/762 , Y10S977/938 , H01L2924/00
摘要： Semiconductor devices are fabricated using nanowires (16). A conductive gate (22) may be used to control conduction along the nanowires (16), in which case one of the contacts is a drain (12) and the other a source (18). The nanowires (16) may be grown in a trench or through-hole (8) in a substrate (2) or in particular in epilayer (3) on substrate (2). The gate (22) may be provided only at one end of the nanowires (16). The nanowires (16) can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate (22) and between the gate (22) and the base of the trench.
摘要翻译：使用纳米线制造半导体器件（16）。可以使用导电栅极（22）来控制沿着纳米线（16）的导电，在这种情况下，一个触点是漏极（12），另一个是源极（18）。纳米线（16）可以在衬底（2）中的沟槽或通孔（8）中生长，或特别是在衬底（2）上的外延层（3）中生长。栅极（22）可以仅设置在纳米线（16）的一端。纳米线（16）沿其长度可以是相同的材料; 可以使用不同的材料，特别是与栅极（22）相邻并且在栅极（22）和沟槽的基部之间的不同材料。

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