发明申请
WO2023285443A1 MICRO-FABRICATED DEVICE FOR CONTROLLING TRAPPED IONS AND METHOD OF MANUFACTURING THE SAME BY MICRO-FABRICATION
审中-公开
基本信息:
- 专利标题： MICRO-FABRICATED DEVICE FOR CONTROLLING TRAPPED IONS AND METHOD OF MANUFACTURING THE SAME BY MICRO-FABRICATION
- 申请号：PCT/EP2022/069423 申请日：2022-07-12
- 公开(公告)号：WO2023285443A1 公开(公告)日：2023-01-19
- 发明人： ROESSLER, Clemens , AUCHTER, Silke , STOCKER, Gerald , SGOURIDIS, Sokratis , DECAROLI, Chiara , HOME, Jonathan , VALENTINI, Marco , COLOMBE, Yves , HOLZ, Philip
- 申请人： INFINEON TECHNOLOGIES AUSTRIA AG , EIDGENÖSSISCHE TECHNISCHE HOCHSCHULE - ETH ZÜRICH , UNIVERSITÄT INNSBRUCK
- 申请人地址： Siemensstr. 2; ETH Zentrum, Raemistr. 101; Innrain 52
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG,EIDGENÖSSISCHE TECHNISCHE HOCHSCHULE - ETH ZÜRICH,UNIVERSITÄT INNSBRUCK
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG,EIDGENÖSSISCHE TECHNISCHE HOCHSCHULE - ETH ZÜRICH,UNIVERSITÄT INNSBRUCK
- 当前专利权人地址： Siemensstr. 2; ETH Zentrum, Raemistr. 101; Innrain 52
- 代理机构： LAMBSDORFF & LANGE PATENTANWÄLTE PARTNERSCHAFT MBB
- 优先权： EP21185020.1 2021-07-12
- 主分类号： G21K1/00
- IPC分类号： G21K1/00 ; G06N10/00 ; B82Y10/00
摘要：
A device (100) for controlling trapped ions (180) includes a first semiconductor substrate (120) comprising a semiconductor and/ or dielectric material. A first micro-fabricated electrode structure (125) is disposed at a main side of the first substrate (120). The device (100) further includes a second substrate (140) comprising a semiconductor and/or dielectric material. A second micro-fabricated electrode structure (145) is disposed at a main side of the second substrate (140) opposite the main side of the first substrate (120). A plurality of spacer members (160) is disposed between the first substrate (120) and the second substrate (140). At least one ion trap is configured to trap ions (180) in a space between the first substrate (120) and the second substrate (140). The first micro-fabricated electrode structure (125) and the second micro-fabricated electrode structure (145) comprise electrodes of the ion trap. A multi-layer metal interconnect (135) is formed on the first substrate (120) and electrically connected to the first micro-fabricated electrode structure (125).
IPC结构图谱:
| G | 物理 |
| --G21 | 核物理；核工程 |
| ----G21K | 未列入其他类目的粒子或电磁辐射的处理技术；照射装置；γ射线或X射线显微镜 |
| ------G21K1/00 | 辐射或粒子的处理装置，如聚焦、慢化 |