基本信息:
- 专利标题： STACKED FET WITH DIFFERENT CHANNEL MATERIALS
- 申请号：PCT/IB2022/055686 申请日：2022-06-20
- 公开(公告)号：WO2022269447A1 公开(公告)日：2022-12-29
- 发明人： XIE, Ruilong , MILLER, Eric , GUO, Dechao , SHEARER, Jeffrey , FAN, Su Chen , FROUGIER, Julien , BASKER, Veeraraghavan , WANG, Junli , SUK, Sung Dae
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM (CHINA) INVESTMENT COMPANY LTD. , IBM DEUTSCHLAND GMBH
- 申请人地址： New Orchard Road; 25/F, Pangu Plaza, No. 27,; IBM-Allee 1
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,IBM (CHINA) INVESTMENT COMPANY LTD.,IBM DEUTSCHLAND GMBH
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,IBM (CHINA) INVESTMENT COMPANY LTD.,IBM DEUTSCHLAND GMBH
- 当前专利权人地址： New Orchard Road; 25/F, Pangu Plaza, No. 27,; IBM-Allee 1
- 代理机构： VETTER, Svenja
- 优先权： US17/304,392 2021-06-21
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/336 ; H01L21/02532 ; H01L21/0259 ; H01L21/02609 ; H01L21/823807 ; H01L27/0922 ; H01L29/045 ; H01L29/0665 ; H01L29/42392 ; H01L29/66545 ; H01L29/66742 ; H01L29/775 ; H01L29/78651 ; H01L29/78684 ; H01L29/78696
摘要：
A semiconductor device comprising at least one first gate all around channel having a horizontal physical orientation, wherein the at least one first gate all around channel is comprised of a first material, wherein the at least one first gate all around channel has a sidewall surface with (100) crystal orientation. At least one second gate all around channel having a vertical physical orientation, wherein the second channel is located above the at least one first gate all around channel, wherein the at least one second gate all around channel is comprised of a second material, wherein the at least one second gate all around channel has a sidewall surface with (110) crystal orientation. A gate metal enclosing the at least one first gate all around channel and the at least one second gate all around channel.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/085 | ....只包含场效应的组件 |
| ----------------H01L27/088 | .....有绝缘栅场效应晶体管的组件 |