发明申请
WO2022235419A1 METAL-OXIDE-SEMICONDUCTOR CAPACITOR AND CIRCUIT BOARD INCLUDING THE SAME EMBEDDED THEREIN
审中-公开
基本信息:
- 专利标题： METAL-OXIDE-SEMICONDUCTOR CAPACITOR AND CIRCUIT BOARD INCLUDING THE SAME EMBEDDED THEREIN
- 申请号：PCT/US2022/025180 申请日：2022-04-18
- 公开(公告)号：WO2022235419A1 公开(公告)日：2022-11-10
- 发明人： NELSON, Cory
- 申请人： KYOCERA AVX COMPONENTS CORPORATION
- 申请人地址： One AVX Boulevard
- 专利权人： KYOCERA AVX COMPONENTS CORPORATION
- 当前专利权人： KYOCERA AVX COMPONENTS CORPORATION
- 当前专利权人地址： One AVX Boulevard
- 代理机构： HOOD, Heidi C. et al.
- 优先权： US63/183,114 2021-05-03
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/66
摘要：
A metal-oxide-semiconductor (MOS) capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a first terminal connected with the surface of the substrate, and a second terminal connected with the conductive layer. The oxide layer can be connected in series between the substrate and the conductive layer to form a capacitor between the first terminal and the second terminal. Each of the first terminal and the second terminal can be exposed along the surface of the substrate for surface mounting the capacitor. The MOS capacitor can exhibit excellent high frequency performance. For example, an insertion loss of the MOS capacitor can be greater than about ‑0.75 dB for frequencies ranging from about 5 GHz to about 40 GHz.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/86 | ..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的 |
| ------------H01L29/861 | ...二极管 |
| --------------H01L29/94 | ....金属—绝缘体—半导体，例如MOS |