基本信息:
- 专利标题： METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL
- 申请号：PCT/EP2021/085512 申请日：2021-12-13
- 公开(公告)号：WO2022123083A1 公开(公告)日：2022-06-16
- 发明人： CRÖSSMANN, Ivo , SCHAAFF, Friedrich , TIEFEL, Hilmar Richard , CERAN, Kagan
- 申请人： ZADIENT TECHNOLOGIES SAS [FR]/[FR]
- 专利权人： ZADIENT TECHNOLOGIES SAS [FR]/[FR]
- 当前专利权人： ZADIENT TECHNOLOGIES SAS [FR]/[FR]
- 代理机构： KEHL, ASCHERL, LIEBHOFF & ETTMAYR PATENTANWÄLTE * PARTNERSCHAFT MBB
- 优先权： DE10 2020 215 755.3 2020-12-11
- 主分类号： C30B35/00
- IPC分类号： C30B35/00 ; C30B29/36 ; C30B23/02 ; C30B23/00 ; C30B25/08 ; C30B25/14 ; C30B25/18 ; C23C16/32 ; B01D53/00 ; C23C16/44
摘要：
The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.
公开/授权文献:
- WO2022123083A2 METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL 公开/授权日：2022-06-16