基本信息:
- 专利标题： VORRICHTUNG ZUM ZÜCHTEN VON EINKRISTALLEN
- 专利标题（英）：METHOD FOR GROWING SINGLE CRYSTALS
- 申请号：PCT/AT2021/060342 申请日：2021-09-23
- 公开(公告)号：WO2022061387A1 公开(公告)日：2022-03-31
- 发明人： ARIYAWONG, Kanaparin , BARBAR, Ghassan , EBNER, Robert , HSIUNG, Chih-Yung
- 申请人： EBNER INDUSTRIEOFENBAU GMBH
- 申请人地址： Ebner-Platz 1
- 专利权人： EBNER INDUSTRIEOFENBAU GMBH
- 当前专利权人： EBNER INDUSTRIEOFENBAU GMBH
- 当前专利权人地址： Ebner-Platz 1
- 代理机构： ANWÄLTE BURGER UND PARTNER RECHTSANWALT GMBH
- 优先权： ATA50820/2020 2020-09-28
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; C30B29/36
The invention relates to a device (501) for growing single crystals, in particular silicium carbide single crystals, and comprises a crucible (502), the crucible (502) defining an outer surface (503) and delimiting a receptacle (504) having an axial extent between a bottom portion (505) and an opening portion (506). The receptacle (504) is designed for crystal growth and at least one seed crystal layer (507) is located in the opening portion (506), the seed crystal layer (507) being weighted down by means of a weighting mass (508) at a side remote from the receptacle (504) and being fixed, in particular exclusively, by the weight force of the weighting mass (508) in its position against at least one holding portion (509) located in the opening portion.