A ferroelectric memory. The ferroelectric memory comprises at least one storage unit, and each storage unit comprises a first electrode (1), a second electrode (2), a third electrode (3), a ferroelectric layer (4), and a first semiconductor layer (10), second semiconductor layer (20), and third semiconductor layer (30) that are stacked; a PN junction is formed between the first semiconductor layer (10) and the second semiconductor layer (20); the first electrode (1) is disposed on a side of the first semiconductor layer (10) away from the second semiconductor layer (20); the third electrode (3) is disposed on a side of the third semiconductor layer (30) away from the second semiconductor layer (20); the ferroelectric layer (4) surrounds the entire side surface or a part of the side surface of the third semiconductor layer (30); and the second electrode (2) surrounds the ferroelectric layer (4). As such, subsequently, when data is read from and written into the storage unit(s), the impact that the polarization of the ferroelectric layer (4) has on the PN junction formed by the first semiconductor layer (10) and the second semiconductor layer (20) can be reduced, thereby improving the durability of the ferroelectric memory.