Provided is a solid-state imaging device in which the image quality of the solid-state imaging device can be further improved.　Provided is a solid-state imaging device comprising a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and converts light into electric charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charge. The first photoelectric conversion unit and the second photoelectric conversion unit each include at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first photoelectric conversion unit is electrically connected, via at least a penetrating conductive part, to the first electrode of the second photoelectric conversion unit and a charge storage unit formed on the semiconductor substrate, and an insulating film section is disposed in at least a portion of the outer periphery of the conductive part. The insulating film section is constituted by at least one layer of insulating film, and the at least one layer of insulating film has a fixed charge of the same type as the charge stored in the charge storage unit.