发明申请
WO2020097098A3 METHODS AND APPARATUS FOR A THREE-DIMENSIONAL (3D) ARRAY HAVING ALIGNED DEEP-TRENCH CONTACTS
审中-公开
基本信息:
- 专利标题： METHODS AND APPARATUS FOR A THREE-DIMENSIONAL (3D) ARRAY HAVING ALIGNED DEEP-TRENCH CONTACTS
- 申请号：PCT/US2019/059892 申请日：2019-11-05
- 公开(公告)号：WO2020097098A3 公开(公告)日：2020-05-14
- 发明人： HSU, Fu-Chang
- 申请人： NEO SEMICONDUCTOR, INC.
- 申请人地址： 1871 The Alameda, Suite 250 San Jose, California 95126 US
- 专利权人： NEO SEMICONDUCTOR, INC.
- 当前专利权人： NEO SEMICONDUCTOR, INC.
- 当前专利权人地址： 1871 The Alameda, Suite 250 San Jose, California 95126 US
- 代理机构： JACKSON, Juneko et al.
- 优先权： US62/757,747 20181108; US62/777,060 20181207; US62/800,404 20190201; US62/800,480 20190202; US62/807,169 20190218; US62/837,180 20190422
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; H01L43/12 ; G11C11/16
摘要：
Methods and apparatus for a three-dimensional (3D) array having aligned deep-trench contacts are disclosed. In an embodiment, a method includes forming an array stack having conductor layers and insulator layers, and forming a hard mask on top of the array stack. The hard mask includes a plurality of holes. The method also includes forming a pull-back mask on top of the hard mask, and etching the pull-back mask so that at least one hole of the hard mask is exposed. The method also includes etching through one or more exposed holes of the hard mask to remove one or more layers of the array stack.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L43/00 | 应用电—磁或者类似磁效应的器件；专门适用于制造或处理这些器件或其部件的方法或设备 |
| --------H01L43/08 | .磁场控制的电阻器 |