发明申请
WO2019073411A1 SEMICONDUCTOR DEVICES HAVING HETEROJUNCTIONS OF AN INDIUM ALUMINUM NITRIDE TERNARY ALLOY LAYER AND A SECOND III‑NITRIDE TERNARY ALLOY LAYER
审中-公开
基本信息:
- 专利标题： SEMICONDUCTOR DEVICES HAVING HETEROJUNCTIONS OF AN INDIUM ALUMINUM NITRIDE TERNARY ALLOY LAYER AND A SECOND III‑NITRIDE TERNARY ALLOY LAYER
- 申请号：PCT/IB2018/057854 申请日：2018-10-10
- 公开(公告)号：WO2019073411A1 公开(公告)日：2019-04-18
- 发明人： LI, Xiaohang , LIU, Kaikai
- 申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- 申请人地址： 4700 King Abdullah University of Science and Technology Thuwal, 23955-6900 SA
- 专利权人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- 当前专利权人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： 4700 King Abdullah University of Science and Technology Thuwal, 23955-6900 SA
- 优先权： US62/570,798 20171011; US62/576,246 20171024; US62/594,330 20171204; US62/594,389 20171204; US62/594,391 20171204; US62/594,767 20171205; US62/594,774 20171205
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming a semiconductor device having a heterojunction of a first III- nitride ternary alloy layer arranged on a second III-nitride ternary alloy layer is provided. A range of concentrations of III-nitride elements for the first and second III- nitride ternary alloy layers is determined so that the absolute value of the polarization difference at the interface of the heterojunction of the first and second III-nitride ternary alloy layers is less than or equal to 0.007 C/m2 or greater than or equal to 0.04 C/m2. Specific concentrations of III-nitride elements for the first and second III- nitride ternary alloy layers are selected from the determined range of concentrations so that the absolute value of the polarization difference at the interface of the heterojunction of the first and second III-nitride ternary alloy layers is less than or equal to 0.007 C/m2 or greater than or equal to 0.04 C/m2. The semiconductor device is formed using the selected specific concentrations of III-nitride elements for the first and second III-nitride ternary alloy layers. The first and second III-nitride ternary alloy layers have a Wurtzite crystal structure. The first III-nitride ternary alloy layer is InAlN and the second III-nitride ternary alloy layer is InGaN, AlGaN, BAlN, or BGaN.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |