发明申请
WO2013074516A1 IMPROVED READ OPERATION FOR NON-VOLATILE STORAGE SYSTEM WITH NAND STRINGS SHARING BIT LINE AND WORD LINES
审中-公开
基本信息:
- 专利标题： IMPROVED READ OPERATION FOR NON-VOLATILE STORAGE SYSTEM WITH NAND STRINGS SHARING BIT LINE AND WORD LINES
- 专利标题（中）：改进非易失存储系统的读取操作，具有共享字线和字线的NAND条
- 申请号：PCT/US2012/064818 申请日：2012-11-13
- 公开(公告)号：WO2013074516A1 公开(公告)日：2013-05-23
- 发明人： MOKHLESI, Nima , DUNGA, Mohan, V. , MUI, Man
- 申请人： SANDISK TECHNOLOGIES, INC. , MOKHLESI, Nima , DUNGA, Mohan, V. , MUI, Man
- 申请人地址： Two Legacy Town Center 6900 North Dallas Parkway Plano, TX 75024 US
- 专利权人： SANDISK TECHNOLOGIES, INC.,MOKHLESI, Nima,DUNGA, Mohan, V.,MUI, Man
- 当前专利权人： SANDISK TECHNOLOGIES, INC.,MOKHLESI, Nima,DUNGA, Mohan, V.,MUI, Man
- 当前专利权人地址： Two Legacy Town Center 6900 North Dallas Parkway Plano, TX 75024 US
- 代理机构： MAGEN, Burt
- 优先权： US13/674,470 20121112; US61/561,286 20111118
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C16/04 ; G11C16/26 ; G11C16/34 ; H01L27/115
摘要：
A non-volatile storage system is disclosed that includes pairs of NAND strings (or other groupings of memory cells) in the same block being connected to and sharing a common bit line. To operate the system, two selection lines are used so that the NAND strings (or other groupings of memory cells) sharing a bit line can be selected at the block level. Both selection lines are connected to a selection gate for each of the NAND strings (or other groupings of memory cells) sharing the bit line. One set of embodiments avoid unwanted boosting during read operations by keeping the channels of the memory cells connected to word lines on the drain side of the selected word line biased at a fixed potential.
摘要（中）：
公开了一种非易失性存储系统，其包括连接到共享位线的同一块中的NAND串（或存储器单元的其它组）对。 为了操作该系统，使用两条选择线，使得可以在块级选择共享位线的NAND串（或存储器单元的其它分组）。 两个选择线连接到共享位线的每个NAND串（或存储器单元的其它组）的选择门。 一组实施例通过将存储器单元的通道与所选择的字线的漏极侧的字线连接以偏置固定电位来避免读取操作期间的不希望的升压。
IPC结构图谱:
| G11C11/56 | 组优先于G11C11/02至G11C11/54中各组。 |