基本信息:
- 专利标题： RESISTANCE MEMORY CELL
- 专利标题（中）：电阻存储单元
- 申请号：PCT/US2012043884 申请日：2012-06-22
- 公开(公告)号：WO2012178114A3 公开(公告)日：2013-04-11
- 发明人： KELLAM MARK D , BRONNER GARY B
- 申请人： RAMBUS INC , KELLAM MARK D , BRONNER GARY B
- 专利权人： RAMBUS INC,KELLAM MARK D,BRONNER GARY B
- 当前专利权人： RAMBUS INC,KELLAM MARK D,BRONNER GARY B
- 优先权： US201161500887 2011-06-24
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C7/10 ; G11C7/20
摘要：
A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low- resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.
摘要（中）：
电阻存储器包括具有电阻存储元件和串联的两端存取装置的电阻存储单元。 双端子存取装置影响电阻存储单元的电流 - 电压特性。 电阻存储器还包括一个电路，在电阻存储单元两端施加具有设定极性的设定脉冲，将电阻存储单元设置为在施加设定脉冲后保持的低电阻状态，具有复位极性的复位脉冲 与设定的极性相反，将电阻存储单元复位到施加复位脉冲之后保持的高电阻状态，以及复位极性的读取脉冲和幅度比复位脉冲更小以确定电阻状态 的电阻存储单元，而不改变电阻存储单元的电阻状态。