基本信息:
- 专利标题： GROWTH OF III-V LED STACKS USING NANO MASKS
- 专利标题（中）：使用NANO MASKS的III-V LED堆叠的增长
- 申请号：PCT/US2012/022085 申请日：2012-01-20
- 公开(公告)号：WO2012102970A1 公开(公告)日：2012-08-02
- 发明人： KANG, Sang, Won , SU, Jie , NG, Tuoh-Bin , BOUR, David , HSU, Wei-Yung
- 申请人： APPLIED MATERIALS, INC. , KANG, Sang, Won , SU, Jie , NG, Tuoh-Bin , BOUR, David , HSU, Wei-Yung
- 申请人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 专利权人： APPLIED MATERIALS, INC.,KANG, Sang, Won,SU, Jie,NG, Tuoh-Bin,BOUR, David,HSU, Wei-Yung
- 当前专利权人： APPLIED MATERIALS, INC.,KANG, Sang, Won,SU, Jie,NG, Tuoh-Bin,BOUR, David,HSU, Wei-Yung
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 代理机构： VINCENT, Lester J. et al.
- 优先权： US61/435,512 20110124
- 主分类号： H01L33/12
- IPC分类号： H01L33/12 ; H01L33/30
摘要：
Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.
摘要（中）：
方法，用于制造具有改善晶体质量的发光二极管（LED）的半导体材料堆叠和设备。 在诸如GaN的III-V族材料的核之间沉积生长塞，以形成纳米掩模。 III-V族材料从未被纳米掩模覆盖的核的区域横向长满，以形成具有降低的位错密度的连续材料层，以准备LED的n型和p型层的随后生长。 即使存在纳米掩模，来自核的横向过度生长也可进一步恢复缓冲层的表面形态。 生长停止剂的存在可能进一步导致在LED堆叠的衬底侧上的空隙形成以提高光提取效率。