发明申请
WO2008147780A1 METHOD AND CIRCUIT FOR AN EFFICIENT AND SCALABLE CONSTANT CURRENT SOURCE FOR AN ELECTRONIC DISPLAY
审中-公开
基本信息:
- 专利标题: METHOD AND CIRCUIT FOR AN EFFICIENT AND SCALABLE CONSTANT CURRENT SOURCE FOR AN ELECTRONIC DISPLAY
- 专利标题(中):用于电子显示的有效和可定量恒定电流源的方法和电路
- 申请号:PCT/US2008/064271 申请日:2008-05-20
- 公开(公告)号:WO2008147780A1 公开(公告)日:2008-12-04
- 发明人: THANDI, Gurjit, S. , S, Dilip , SANTO, Hendrik , VI, Kien
- 申请人: MSILICA , THANDI, Gurjit, S. , S, Dilip , SANTO, Hendrik , VI, Kien
- 申请人地址: 2901 Tasman Drive, Suite 203 Santa Clara, CA 94054 US
- 专利权人: MSILICA,THANDI, Gurjit, S.,S, Dilip,SANTO, Hendrik,VI, Kien
- 当前专利权人: MSILICA,THANDI, Gurjit, S.,S, Dilip,SANTO, Hendrik,VI, Kien
- 当前专利权人地址: 2901 Tasman Drive, Suite 203 Santa Clara, CA 94054 US
- 代理机构: KUNG, Viola, T.
- 优先权: US11/805,523 20070522
- 主分类号: G05F3/16
- IPC分类号: G05F3/16
摘要:
The present invention uses two transistors instead of a sensing resistor to provide a constant current source for a load such as an array of light emitting diodes ( LEDs ). In the present invention, a bias current is applied to a branch of the circuit. The drain-to-source voltages of two transistors are matched. The voltage at the gate of both transistors is controlled based on the bias current and the drain-to-source current of the first of the two transistors. The second of the two transistors is sized such that source current of the second transistor is a multiple of the source current of the first transistor for a given gate voltage. By the techniques of this invention, the load current in a circuit is efficiently kept constant at a multiple of the input bias current.
摘要(中):
本发明使用两个晶体管而不是感测电阻来为例如发光二极管(LED)阵列的负载提供恒定电流源。 在本发明中,偏置电流被施加到电路的支路。 两个晶体管的漏极 - 源极电压匹配。 基于两个晶体管中的第一个的偏置电流和漏极 - 源极电流来控制两个晶体管的栅极处的电压。 两个晶体管中的第二个的尺寸使得第二晶体管的源电流对于给定的栅极电压是第一晶体管的源极电流的倍数。 通过本发明的技术,电路中的负载电流被有效地保持恒定在输入偏置电流的倍数。
IPC结构图谱:
G | 物理 |
--G05 | 控制;调节 |
----G05F | 调节电变量或磁变量的系统 |
------G05F3/00 | 应用具有自调节性能的非控制元件或非控制元件的组合来调节电变量的非回授系统 |
--------G05F3/02 | .调节电压或电流的 |
----------G05F3/04 | ..其中变量是交流的 |
------------G05F3/10 | ...利用具有非线性特性的非控制器件 |
--------------G05F3/16 | ....非控制器件是半导体器件 |