发明申请
WO2007075305A1 METHOD OF FABRICATING A MOSFET TRANSISTOR HAVING AN ANTI-HALO FOR MODIFYING NARROW WIDTH DEVICE PERFORMANCE
审中-公开
基本信息:
- 专利标题： METHOD OF FABRICATING A MOSFET TRANSISTOR HAVING AN ANTI-HALO FOR MODIFYING NARROW WIDTH DEVICE PERFORMANCE
- 专利标题（中）：制造具有抗HALO的MOSFET晶体管的方法，用于修改NARWOW宽度器件性能
- 申请号：PCT/US2006/047034 申请日：2006-12-08
- 公开(公告)号：WO2007075305A1 公开(公告)日：2007-07-05
- 发明人： CURELLO, Giuseppe , MUDANAI, Sivakumar, P. , LINDERT, Nick , PIPES, Leonard, C. , SHAHEED, M., Reaz , TYAGI, Sunit
- 申请人： INTEL CORPORATION , CURELLO, Giuseppe , MUDANAI, Sivakumar, P. , LINDERT, Nick , PIPES, Leonard, C. , SHAHEED, M., Reaz , TYAGI, Sunit
- 申请人地址： 2200 Mission College Boulevard, Santa Clara, CA 95052 US
- 专利权人： INTEL CORPORATION,CURELLO, Giuseppe,MUDANAI, Sivakumar, P.,LINDERT, Nick,PIPES, Leonard, C.,SHAHEED, M., Reaz,TYAGI, Sunit
- 当前专利权人： INTEL CORPORATION,CURELLO, Giuseppe,MUDANAI, Sivakumar, P.,LINDERT, Nick,PIPES, Leonard, C.,SHAHEED, M., Reaz,TYAGI, Sunit
- 当前专利权人地址： 2200 Mission College Boulevard, Santa Clara, CA 95052 US
- 代理机构： VINCENT, Lester, J. et al.
- 优先权： US11/319,815 20051227
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dopant into the active region adjacent an interface defined by the trench isolation structure and the gate electrode. A structure including a gate electrode formed on a substrate, an active region adjacent an interface defined by a trench isolation structure and a gate electrode and an implant within the active region to change a performance of a transistor.
摘要（中）：
一种包括在衬底的有源区上形成包括栅电极的晶体管结构结构的方法，所述有源区由沟槽隔离结构限定，并通过将掺杂剂引入到宽宽度晶体管中来改变窄宽晶体管的性能 邻接由沟槽隔离结构和栅电极限定的界面的有源区。 一种结构，包括形成在衬底上的栅电极，与由沟槽隔离结构限定的界面相邻的有源区和栅电极以及有源区内的注入以改变晶体管的性能。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/76 | ...组件间隔离区的制作 |
| --------------H01L21/762 | ....介电区 |