发明申请
WO2005089303A2 SELF-ALIGNED SILICON CARBIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME
审中-公开
基本信息:
- 专利标题: SELF-ALIGNED SILICON CARBIDE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE SAME
- 专利标题(中):自对准硅碳化硅半导体器件及其制造方法
- 申请号:PCT/US2005/008526 申请日:2005-03-14
- 公开(公告)号:WO2005089303A2 公开(公告)日:2005-09-29
- 发明人: SANKIN, Igor , CASADY, Jana B. , MERRETT, Joseph N.
- 申请人: SEMISOUTH LABORATORIES, INC. , SANKIN, Igor , CASADY, Jana B. , MERRETT, Joseph N.
- 申请人地址: 201 Research Boulevard, Starkville, MS 39759 US
- 专利权人: SEMISOUTH LABORATORIES, INC.,SANKIN, Igor,CASADY, Jana B.,MERRETT, Joseph N.
- 当前专利权人: SEMISOUTH LABORATORIES, INC.,SANKIN, Igor,CASADY, Jana B.,MERRETT, Joseph N.
- 当前专利权人地址: 201 Research Boulevard, Starkville, MS 39759 US
- 代理机构: KELBER, Steven B.
- 优先权: US60/552,398 20040312; US11/076,857 20050311
- 主分类号: H01L29/15
- IPC分类号: H01L29/15 ; H01L31/0312
摘要:
A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stability as a result of reduced surface trapping effects even at low gate biases. The device can be made using a self-aligned process in which a substrate comprising an n + -doped SiC layer on an n-doped SiC channel layer is etched to define raised source and drain regions (e.g., raised fingers) using a metal etch mask. The metal etch mask is then annealed to form source and drain ohmic contacts. A single- or multilayer dielectric film is then grown or deposited and anisotropically etched. A Schottky contact layer and a final metal layer are subsequently deposited using evaporation or another anisotropic deposition technique followed by an optional isotropic etch of dielectric layer or layers.
摘要(中):
描述了具有改善的电流稳定性的自对准碳化硅功率MESFET和制造该器件的方法。 包括由栅极凹槽分开的升高的源极和漏极区域的器件由于即使在低栅极偏置处减小的表面俘获效应也具有改善的电流稳定性。 可以使用自对准工艺来制造器件,其中在n掺杂的SiC沟道层上包括掺杂n + n的SiC层的衬底被蚀刻以使用一个(例如,凸起的指状物)来限定凸起的源极和漏极区域 金属蚀刻掩模。 然后将金属蚀刻掩模退火以形成源极和漏极欧姆接触。 然后生长或沉积单层或多层介电膜并进行各向异性蚀刻。 随后使用蒸发或其他各向异性沉积技术沉积肖特基接触层和最后的金属层,随后对介电层或层进行任意的各向同性蚀刻。