基本信息:
- 专利标题： SEMICONDUCTOR LASER FABRICATION
- 专利标题（中）：半导体激光制造
- 申请号：PCT/US1987000279 申请日：1987-02-06
- 公开(公告)号：WO1987006398A1 公开(公告)日：1987-10-22
- 发明人： BELL COMMUNICATIONS RESEARCH, INC. , YABLONOVITCH, Eli
- 申请人： BELL COMMUNICATIONS RESEARCH, INC.
- 专利权人： BELL COMMUNICATIONS RESEARCH, INC.
- 当前专利权人： BELL COMMUNICATIONS RESEARCH, INC.
- 优先权： US853,613 19860418
- 主分类号： H01S03/19
- IPC分类号： H01S03/19
摘要：
A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition AlxGal-xAs of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition InyGa1-yAs on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition AlxGal-xAs and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.
摘要（中）：
一种通过在衬底上沉积具有第一导电类型的组成Al x Ga 1-x As的第一半导体材料层和用于量子限制的薄的第二半导体材料层来制造具有第一导电类型的砷化镓衬底的半导体激光器的方法， 组成InyGa1-yAs在第一层。 该层在半导体结构中经历足够的应变，以便使阈值电流密度最小化。 通过在第二层上沉积具有组成Al x Ga 1-x As和第二导电类型的第三层半导体材料并在第三层上沉积具有组成为GaAs并具有第二导电类型的第四层半导体材料来完成该器件。