发明申请
US20180301586A1 MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS AND LIGHT EMITTING DIODE WITH TEXTURED SURFACE
审中-公开
基本信息:
- 专利标题： MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS AND LIGHT EMITTING DIODE WITH TEXTURED SURFACE
- 申请号：US15943151 申请日：2018-04-02
- 公开(公告)号：US20180301586A1 公开(公告)日：2018-10-18
- 发明人： Stephen W. Bedell , Ning Li , Devendra K. Sadana , Ghavam G. Shahidi
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L31/147
- IPC分类号： H01L31/147 ; H01L31/0735 ; H01L31/0236 ; H01L31/0304 ; H01L33/00 ; H01L31/18 ; H01L33/06 ; H01L33/32
摘要：
A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a semiconductor substrate. The first conductivity type semiconductor material continuously extending along an entirety of the semiconductor substrate in a plurality of triangular shaped islands; and conformally forming a layer of type III-V semiconductor material having a second conductivity type on the plurality of triangular shaped islands to provide a textured surface of a photovoltaic device. A light emitting diode is formed on the textured surface of the photovoltaic device.