基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME
- 申请号：US15700679 申请日：2017-09-11
- 公开(公告)号：US20170373055A1 公开(公告)日：2017-12-28
- 发明人： Masaki SHIRAISHI , Tomoaki UNO , Nobuyoshi MATSUURA
- 申请人： RENESAS ELECTRONICS CORPORATION
- 优先权： JP2004-223664 20040730
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H02M3/155 ; H01L29/78 ; H01L29/66 ; H01L29/49 ; H01L29/45 ; H01L29/423 ; H01L23/00 ; H01L23/495 ; H01L23/31 ; H01L21/8234 ; H01L21/28 ; H02M7/00 ; H01L29/417 ; H01L29/10 ; H01L29/872
摘要：
In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |