基本信息:
- 专利标题： ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE
- 专利标题（中）：模拟电路和半导体器件
- 申请号：US15063706 申请日：2016-03-08
- 公开(公告)号：US20160190176A1 公开(公告)日：2016-06-30
- 发明人： Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP2009-242853 20091021
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H04M1/02 ; H01L27/15 ; H01L27/32 ; H01L29/24 ; H01L29/786
摘要：
An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要（中）：
目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。 使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用 其中不产生电场。 因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。
公开/授权文献:
- US09716109B2 Analog circuit and semiconductor device 公开/授权日：2017-07-25