基本信息:
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）：半导体器件
- 申请号：US14850274 申请日：2015-09-10
- 公开(公告)号：US20150380374A1 公开(公告)日：2015-12-31
- 发明人： Yoko NAKAMURA , Norihiro NASHIDA
- 申请人： FUJI ELECTRIC CO., LTD.
- 优先权： JP2013-128409 20130619
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H05K1/18 ; H05K3/34 ; H01L25/065
摘要：
The semiconductor device includes an insulating substrate including an insulating plate and a circuit plate; a semiconductor chip having a front surface formed with an electrode and a rear surface fixed to the circuit plate; a printed circuit board including a metal layer, and facing the insulating substrate; a conductive bonding material disposed on the electrode; and a conductive post having a leading end portion electrically and mechanically connected to the electrode through the bonding material, a base portion electrically and mechanically connected to the metal layer, and a central portion. In the conductive post, a wetting angle of a surface of the leading end portion with respect to the molten bonding material is less than the wetting angle of a surface of the central portion.
摘要（中）：
半导体器件包括：绝缘基板，包括绝缘板和电路板; 半导体芯片，其具有形成有电极的正面和固定到所述电路板的后表面; 包括金属层的印刷电路板，并且面向绝缘基板; 设置在电极上的导电接合材料; 以及导电柱，其前端部通过所述接合材料与所述电极电连接机械连接，所述基部电连接和机械连接到所述金属层，以及中心部。 在导电柱中，前端部的表面相对于熔融接合材料的润湿角度小于中心部分的表面的润湿角度。
公开/授权文献:
- US09991220B2 Semiconductor device 公开/授权日：2018-06-05
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |