基本信息:
- 专利标题： III-Nitride Based Semiconductor Structure
- 专利标题（中）：基于III-Nitride的半导体结构
- 申请号：US14743218 申请日：2015-06-18
- 公开(公告)号：US20150287792A1 公开(公告)日：2015-10-08
- 发明人： T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
- 申请人： International Rectifier Corporation
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/205 ; H01L29/778 ; H01L33/12 ; H01L33/06 ; H01L33/32 ; H01L29/201 ; H01L29/15
摘要：
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要（中）：
本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
公开/授权文献:
- US09437687B2 III-nitride based semiconductor structure 公开/授权日：2016-09-06