基本信息:
- 专利标题： POWER SEMICONDUCTOR DEVICE
- 专利标题（中）：功率半导体器件
- 申请号：US13500659 申请日：2009-10-14
- 公开(公告)号：US20120205669A1 公开(公告)日：2012-08-16
- 发明人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
- 申请人： Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Shiro Hino , Akihiko Furukawa
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 国际申请： PCT/JP09/05356 WO 20091014
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L21/336
摘要：
In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching.
摘要（中）：
在根据本发明的半导体器件中，设置在功率半导体器件的外周部分中的p型阱区被分成两部分，即内部和外部，并且具有更大的场氧化物膜 膜厚比栅极绝缘膜设置在外部的阱区域到阱区的内周的内侧。 因此，可以防止在栅极绝缘膜中由于切换中的位移电流的流动而产生的电压引起的电介质击穿。
公开/授权文献:
- US08492836B2 Power semiconductor device 公开/授权日：2013-07-23