
基本信息:
- 专利标题: Methods of Forming Diodes
- 专利标题(中):形成二极管的方法
- 申请号:US13305072 申请日:2011-11-28
- 公开(公告)号:US20120070973A1 公开(公告)日:2012-03-22
- 发明人: Gurtej S. Sandhu , Bhaskar Srinivasan
- 申请人: Gurtej S. Sandhu , Bhaskar Srinivasan
- 申请人地址: US ID Boise
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID Boise
- 主分类号: H01L21/04
- IPC分类号: H01L21/04
摘要:
Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要(中):
一些实施例包括形成二极管的方法。 可以在第一导电材料上形成堆叠。 堆叠可以按升序包括牺牲材料,至少一种电介质材料和第二导电材料。 间隔物可以沿着堆叠的相对侧壁形成,然后可以去除整个牺牲材料以在第一导电材料和至少一种电介质材料之间留下间隙。 在形成二极管的一些实施例中,可以在第一导电材料上形成层,其中包含支撑体的层散布在牺牲材料中。 可以在该层上形成至少一种介电材料,并且可以在该至少一种电介质材料的上方形成第二导电材料。 然后可以去除整个牺牲材料。
公开/授权文献:
- US08343828B2 Methods of forming diodes 公开/授权日:2013-01-01
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/04 | ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层 |