发明申请
US20100254181A1 Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
有权
基本信息:
- 专利标题： Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
- 专利标题（中）：使用字线过驱动和高k金属栅极提高磁隧道接头的编程电流
- 申请号：US12687747 申请日：2010-01-14
- 公开(公告)号：US20100254181A1 公开(公告)日：2010-10-07
- 发明人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- 申请人： Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C11/14 ; G11C5/14
摘要：
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
摘要（中）：
操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）装置的MRAM单元; 以及选择器，包括串联耦合到MTJ器件的源极 - 漏极路径。 该方法还包括将过驱动电压施加到选择器的门以接通选择器。