基本信息:
- 专利标题： Asymmetrical sealing and gas flow control device
- 申请号：US17644028 申请日：2021-12-13
- 公开(公告)号：US12094730B2 公开(公告)日：2024-09-17
- 发明人： June Hee Lee , Young Jong Yoon , Seok Heon Yu , Pill Kyu Jin , Jeong Woo Woo
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR 20180011597 2018.01.30
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; C23C16/44 ; C23C16/455 ; F16K1/34 ; H01L21/687 ; C23C16/458 ; H01J37/32
摘要：
A sealing device configured for use in a vacuum chamber between a reaction region of the vacuum chamber and an exhaust port includes a ring-shaped body with an upper surface and a lower surface. A distance between the upper surface and the lower surface of the sealing device is a thickness of the ring-shaped body. The thickness of the ring-shaped body differs along a circumference of the ring-shaped body such that the ring-shaped body has a wedge shape. The thickness of the ring-shaped body, around its circumference is dependent upon a structure of the exhaust port.
公开/授权文献:
- US20220102168A1 ASYMMETRICAL SEALING AND GAS FLOW CONTROL DEVICE 公开/授权日：2022-03-31
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |