基本信息:
- 专利标题： 負抗蝕劑圖案的形成方法及電子元件的製造方法
- 专利标题（英）：Method for forming negative resist pattern, and method for manufacturing electronic device
- 专利标题（中）：负抗蚀剂图案的形成方法及电子组件的制造方法
- 申请号：TW106119400 申请日：2017-06-12
- 公开(公告)号：TW201809883A 公开(公告)日：2018-03-16
- 发明人： 浅川大輔 , ASAKAWA, DAISUKE , 小島雅史 , KOJIMA, MASAFUMI , 後藤研由 , GOTO, AKIYOSHI , 崎田享平 , SAKITA, KYOHEI
- 申请人： 富士軟片股份有限公司 , FUJIFILM CORPORATION
- 专利权人： 富士軟片股份有限公司,FUJIFILM CORPORATION
- 当前专利权人： 富士軟片股份有限公司,FUJIFILM CORPORATION
- 代理人： 葉璟宗; 卓俊傑
- 优先权： 2016-132623 20160704
- 主分类号： G03F7/038
- IPC分类号： G03F7/038 ; C08F220/18 ; C08F220/28 ; C08F220/32 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; H01L21/027
Provided are: a method for forming a negative resist pattern that has great exposure latitude and little film thinning; and a method for manufacturing an electronic device, said method including the method for forming a negative resist pattern. The method for forming a negative resist pattern is provided with a film formation step for forming a film on a substrate using an active-light-sensitive or radiation-sensitive resin composition, an exposure step for irradiating the film with active light rays or radiation, and a developing step for developing the film irradiated with active light rays or radiation by using a developing fluid that contains an organic solvent. The active-light-sensitive or radiation-sensitive resin composition contains a resin including at least one repeating unit derived from a compound represented by any one of general formulas (1)-(3).