基本信息:
- 专利标题： 半導體裝置的製造方法
- 专利标题（英）：Method for manufacturing semiconductor device
- 专利标题（中）：半导体设备的制造方法
- 申请号：TW106124844 申请日：2017-07-25
- 公开(公告)号：TW201804531A 公开(公告)日：2018-02-01
- 发明人： 栗原宏嘉 , KURIHARA, HIROYOSHI
- 申请人： 三井化學東賽璐股份有限公司 , MITSUI CHEMICALS TOHCELLO, INC.
- 专利权人： 三井化學東賽璐股份有限公司,MITSUI CHEMICALS TOHCELLO, INC.
- 当前专利权人： 三井化學東賽璐股份有限公司,MITSUI CHEMICALS TOHCELLO, INC.
- 代理人： 葉璟宗; 卓俊傑
- 优先权： 2016-146134 20160726
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/70
This method for manufacturing a semiconductor device comprises at least the following three steps: (A) a step for preparing a structure which comprises a semiconductor wafer having a circuit formation surface and an adhesive film (100) that is bonded to the circuit formation surface of the semiconductor wafer; (B) a step for back grinding a surface of the semiconductor wafer, said surface being on the reverse side of the circuit formation surface; and (C) a step for removing the adhesive film (100) from the semiconductor wafer after irradiating the adhesive film (100) with ultraviolet light. An adhesive film which sequentially comprises a base layer (10), an antistatic layer (30) and an adhesive resin layer (40) containing a conductive additive in this order is used as the adhesive film (100) in such a manner that the adhesive resin layer (40) is on the circuit formation surface of the semiconductor wafer.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/31 | .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的；以及这些层的后处理；这些层的材料的选择 |