The invention relates to a method for manufacturing a structure comprising a first substrate (1) comprising at least one electronic component (10) likely to be damaged by a temperature higher than 400 DEG C and a semi-conductor layer extending on said first substrate, characterised in that it comprises the following steps of: (a) providing a first bonding metal layer (11) on the first substrate (1), (b) providing a second substrate (2) comprising successively: - a semi-conductor base substrate (20), - a stack (21) of a plurality of semi-conductor epitaxial layers, a layer (210) of SixGe1-x, with 0 ≤ x ≤ 1 being located at the surface of said stack (21) opposite to the base substrate (20), - a second bonding metal layer (22), (c) bonding the first substrate and the second substrate through the first and second bonding metal layers (11, 22), said bonding step being carried out at a temperature lower than or equal to 400 DEG C, (d) removing a part of the second substrate so as to transfer the layer (210) of SixGe1-x on the first substrate (1), said removing comprising at least selectively chemically etching a layer of the second substrate (2) relative to the SixGe1-x layer (210).