基本信息:
- 专利标题: 封裝結構
- 专利标题(英):Package structure
- 专利标题(中):封装结构
- 申请号:TW104139226 申请日:2015-11-25
- 公开(公告)号:TW201701440A 公开(公告)日:2017-01-01
- 发明人: 蘇安治 , SU, AN JHIH , 陳憲偉 , CHEN, HSIEN WEI
- 申请人: 台灣積體電路製造股份有限公司 , TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: 新竹市
- 专利权人: 台灣積體電路製造股份有限公司,TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: 台灣積體電路製造股份有限公司,TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: 新竹市
- 代理人: 李世章; 秦建譜
- 优先权: 14/754,705 20150630
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/56 ; H01L21/60
A package structure includes a die, an encapsulant, a through via, a first dielectric layer, a conductive line structure, an adhesion promotion layer, a second dielectric layer and a connector. The encapsulant is formed aside the die. The through via is formed aside the die and penetrates through the encapsulant. The first dielectric layer is formed overlying the die, the encapsulant and the through via. The conductive line structure includes a pad over the first dielectric layer. The adhesion promotion layer overlays a first portion of a top surface and a sidewall of the pad and overlying the first dielectric layer. The second dielectric layer overlays the adhesion promotion layer. The connector is in contact with a second portion of the top surface of the pad. The second portion of the top surface of the pad is exposed by the adhesion promotion layer.
公开/授权文献:
- TWI582937B 封裝結構 公开/授权日:2017-05-11
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L23/00 | 半导体或其他固态器件的零部件 |
--------H01L23/34 | .冷却装置;加热装置;通风装置或温度补偿装置 |
----------H01L23/522 | ..包含制作在半导体本体上的多层导电的和绝缘的结构的外引互连装置的 |