基本信息:
- 专利标题： 垂直式發光二極體的製造方法
- 专利标题（英）：Vertical light emitting diode manufacturing method
- 专利标题（中）：垂直式发光二极管的制造方法
- 申请号：TW104112936 申请日：2015-04-22
- 公开(公告)号：TW201618324A 公开(公告)日：2016-05-16
- 发明人： 邱鏡學 , CHIU, CHING-HSUEH , 林雅雯 , LIN, YA-WEN , 凃博閔 , TU, PO-MIN , 黃世晟 , HUANG, SHIH-CHENG
- 申请人： 榮創能源科技股份有限公司 , ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 申请人地址： 新竹縣
- 专利权人： 榮創能源科技股份有限公司,ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人： 榮創能源科技股份有限公司,ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- 当前专利权人地址： 新竹縣
- 优先权： 201410618495.4 20141106
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
A vertical light emitting diode manufacturing method including following steps: providing a base and forming a plurality of protrusions on a top surface of the base; forming a AlN layer on an outer surface of the protrusions; heating the AlN layer to crystallization; separating the protrusions from the AlN layer; forming a buffer layer on an top end of the AlN layer; forming an N-GaN layer, light emitting layer, and a p-GaN layer in series on the base to get a preliminary light emitting diode structure; providing a substrate and bonding the preliminary light emitting diode structure on the substrate; providing a separating plate to separate the base from the preliminary light emitting diode structure; etching the buffer layer to expose the N-GaN layer and mounting an N electrode on the N-GaN layer.
公开/授权文献:
- TWI563676B 垂直式發光二極體的製造方法 公开/授权日：2016-12-21