基本信息:
- 专利标题： 半導體製造裝置及半導體製造方法
- 专利标题（英）：Semiconductor manufacturing device and semiconductor manufacturing method
- 专利标题（中）：半导体制造设备及半导体制造方法
- 申请号：TW104122596 申请日：2015-07-13
- 公开(公告)号：TW201611157A 公开(公告)日：2016-03-16
- 发明人： 藤倉序章 , FUJIKURA, HAJIME
- 申请人： 住友化學股份有限公司 , SUMITOMO CHEMICAL COMPANY, LIMITED
- 专利权人： 住友化學股份有限公司,SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人： 住友化學股份有限公司,SUMITOMO CHEMICAL COMPANY, LIMITED
- 代理人： 賴經臣; 宿希成
- 优先权： 2014-180854 20140905
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/306
The present invention pertains to a semiconductor manufacturing apparatus in which a film is formed on a substrate by supplying a source gas to the substrate disposed in a reaction furnace, the semiconductor manufacturing apparatus comprising: a storage container disposed in the reaction furnace and accommodating metal raw materials which serve as sources for the source gas; an auxiliary container disposed over the storage container in the reaction furnace and having a bottom which has a feeding port for the metal raw materials; a connection tube allowing an outlet port formed in the auxiliary container to communicate with the inside of the storage container; a sealing plug openably and closably sealing the outlet port; and a heater part for melting the metal raw materials in the auxiliary container and the storage container, and heating the inside of the reaction furnace at a predetermined temperature required for forming a film on the substrate.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |