基本信息:
- 专利标题： 電漿處理方法及電漿處理裝置
- 专利标题（英）：Plasma processing method and plasma processing apparatus
- 专利标题（中）：等离子处理方法及等离子处理设备
- 申请号：TW103137323 申请日：2014-10-29
- 公开(公告)号：TW201534762A 公开(公告)日：2015-09-16
- 发明人： 野中龍 , NONAKA, RYO , 佐藤雅紀 , SATO, MASANORI , 籔本奈津紀 , YABUMOTO, NATSUKI , 高山貴光 , TAKAYAMA, TAKAMITSU , 原田彰俊 , HARADA, AKITOSHI , 佐佐木淳一 , SASAKI, JUNICHI , 花岡秀敏 , HANAOKA, HIDETOSHI
- 申请人： 東京威力科創股份有限公司 , TOKYO ELECTRON LIMITED
- 专利权人： 東京威力科創股份有限公司,TOKYO ELECTRON LIMITED
- 当前专利权人： 東京威力科創股份有限公司,TOKYO ELECTRON LIMITED
- 代理人： 林秋琴; 陳彥希
- 优先权： 2013-227500 20131031;2014-078196 20140404;2014-211142 20141015
- 主分类号： C23C4/12
- IPC分类号： C23C4/12 ; H01J37/32
The purpose of the present invention is to reduce the residual absorbability which hinders the separation of processed bodies. A plasma processing method of the present invention includes: (1) an attachment step, under the circumstances that the electrostatic chuck inside a processing container is not loaded with any processed bodies, attaching a Si-containing material to the electrostatic chuck which is attached with C and F-containing reaction products by producing a plasma of processed gases which contain at least one of Ar, He, O2 and N2 and using ions in said plasma to sputter Si-containing components; (2) an absorption step, when the processed bodies are moved to the interior of the processing container, absorbing the processed bodies by the electrostatic chuck which is deposited with said Si-containing material; (3) a plasma processing step, treating the processed bodies by the plasma; and (4) a separation step; separating the processed bodies, which have been processed by the plasma, from the electrostatic chuck which is attached with the Si-containing material.
公开/授权文献:
- TWI609994B 電漿處理方法及電漿處理裝置 公开/授权日：2018-01-01