基本信息:
- 专利标题： 讀取電壓設定方法、控制電路與記憶體儲存裝置
- 专利标题（英）：Data reading method, and control circuit, and memory storage apparatus using the same
- 专利标题（中）：读取电压设置方法、控制电路与内存存储设备
- 申请号：TW102123267 申请日：2013-06-28
- 公开(公告)号：TW201501124A 公开(公告)日：2015-01-01
- 发明人： 林緯 , LIN, WEI , 許祐誠 , HSU, YU CHENG , 林小東 , LAM, SIU TUNG , 吳宗霖 , WU, TZUNG LIN , 鄭國義 , CHENG, KUO YI
- 申请人： 群聯電子股份有限公司 , PHISON ELECTRONICS CORP.
- 申请人地址： 苗栗縣
- 专利权人： 群聯電子股份有限公司,PHISON ELECTRONICS CORP.
- 当前专利权人： 群聯電子股份有限公司,PHISON ELECTRONICS CORP.
- 当前专利权人地址： 苗栗縣
- 代理人： 詹銘文; 葉璟宗
- 主分类号： G11C16/02
- IPC分类号： G11C16/02 ; G11C16/24
A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.
公开/授权文献:
- TWI521513B 讀取電壓設定方法、控制電路與記憶體儲存裝置 公开/授权日：2016-02-11