基本信息:
- 专利标题: 高溫半導體元件用平角狀鍍金銅帶
- 专利标题(英):Gold plated copper ribbon having flat square shape for high temperature semiconductor elements
- 专利标题(中):高温半导体组件用平角状镀金铜带
- 申请号:TW100127661 申请日:2011-08-04
- 公开(公告)号:TW201308434A 公开(公告)日:2013-02-16
- 发明人: 三上道孝 , MIKAMI, MICHITAKA , 中島伸一郎 , NAKAJIMA, SHINICHIRO , 松尾寬 , MATSUO, HIROSHI , 宮崎兼一 , MIYAZAKI, KENICHI
- 申请人: 田中電子工業股份有限公司 , TANAKA DENSHI KOGYO K.K.
- 专利权人: 田中電子工業股份有限公司,TANAKA DENSHI KOGYO K.K.
- 当前专利权人: 田中電子工業股份有限公司,TANAKA DENSHI KOGYO K.K.
- 代理人: 游永誼
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L23/52
To provide a bonding ribbon connecting the lead between element pad and substrate of semiconductor in the same time at many places, which elevate the ultrasonic bonding property, high conductivity capacity and loop property. The ribbon is constructed by gold coating layer over copper core. wherein copper core is made of copper having Vickers hardness lesser than 70 and purity greater than 99.9%, to get conductivity and loop formability for bonding ribbon; To form the fine microcrystal by using magnetron sputter to deposit said gold coating over the copper core tape at room temperature. Allow the Vickers hardness of said fine microcrystal be the same as that of core and coating layer to prevent the damage of Al pad, and also elevate the bonding property. The hardness of gold fine micricrysyal that is deposited under the rare gas atmosphere by magnetron sputter is greater than that of gold bulk, gold fine microcrystal is in the granule state, which can decline the thermal diffusion in bonding.
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/3205 | ......非绝缘层的沉积,例如绝缘层上的导电层、电阻层(器件内部的通电装置入H01L23/52);这些层的后处理 |